Memory S Gate
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Memory S Gate
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Author : Paul McCusker
language : en
Publisher: Zondervan
Release Date : 2009-08-30
Memory S Gate written by Paul McCusker and has been published by Zondervan this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-08-30 with Juvenile Fiction categories.
The Time Thriller Trilogy delivers gripping, fast-paced mystery that intrigues and captivates through hours, seconds, and centuries. A long history of strange disappearances and unexplainable occurrences leave clues that the town of Fawlt Line may actually sit on a time fault—a portal to alternate times and unexpected time travels—a twist of fate that puts all of Fawlt Line’s citizens in serious danger. Will they find the faith to hold on to the town and time where they belong?Can truth prevail?Elizabeth thought volunteering at the Fawlt Line Retirement Center would be fun, but she quickly has second thoughts. While most of the residents are wonderful, there’s something about the place—and a strangely familiar man in a wheelchair—that gives her the creeps. When people start disappearing from the center, leaving behind cryptic notes, Elizabeth is convinced the time fault is involved. Her own time-travel adventure may be the key to solving the mystery, but can she convince the sheriff she’s telling the truth before more people disappear?
Emerging Nanoelectronic Devices
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Author : An Chen
language : en
Publisher: John Wiley & Sons
Release Date : 2015-01-27
Emerging Nanoelectronic Devices written by An Chen and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-01-27 with Technology & Engineering categories.
Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Ferroelectric Gate Field Effect Transistor Memories
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Author : Byung-Eun Park
language : en
Publisher: Springer Nature
Release Date : 2020-03-23
Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-23 with Technology & Engineering categories.
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Nand Flash Memory Technologies
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Author : Seiichi Aritome
language : en
Publisher: John Wiley & Sons
Release Date : 2015-12-01
Nand Flash Memory Technologies written by Seiichi Aritome and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-01 with Technology & Engineering categories.
Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience
Silicon Based Unified Memory Devices And Technology
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Author : Arup Bhattacharyya
language : en
Publisher: CRC Press
Release Date : 2017-07-06
Silicon Based Unified Memory Devices And Technology written by Arup Bhattacharyya and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Technology & Engineering categories.
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Memory Design
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Author : Laurence Altman
language : en
Publisher:
Release Date : 1978
Memory Design written by Laurence Altman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Computers categories.
Dynamic Ram
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Author : Muzaffer A. Siddiqi
language : en
Publisher: CRC Press
Release Date : 2012-12-19
Dynamic Ram written by Muzaffer A. Siddiqi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-19 with Computers categories.
Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs. Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges. Topics Include: DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research Various types of leakages and power consumption reduction methods in active and sleep mode Various types of SAs and yield enhancement techniques employing ECC and redundancy A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.
Official Gazette Of The United States Patent And Trademark Office
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Author :
language : en
Publisher:
Release Date : 1998
Official Gazette Of The United States Patent And Trademark Office written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Patents categories.
Soft Errors
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Author : Jean-Luc Autran
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Soft Errors written by Jean-Luc Autran and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.
Official Gazette Of The United States Patent And Trademark Office
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Author : United States. Patent and Trademark Office
language : en
Publisher:
Release Date : 2001
Official Gazette Of The United States Patent And Trademark Office written by United States. Patent and Trademark Office and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Patents categories.