Metallization And Metal Semiconductor Interfaces
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Metallization And Metal Semiconductor Interfaces
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Author : Inder P. Batra
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Metallization And Metal Semiconductor Interfaces written by Inder P. Batra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Metal Semiconductor Contacts And Devices
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Author : Simon S. Cohen
language : en
Publisher: Academic Press
Release Date : 2014-12-01
Metal Semiconductor Contacts And Devices written by Simon S. Cohen and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Vlsi Metallization
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Author : Krishna Shenai
language : en
Publisher: Artech House Publishers
Release Date : 1991
Vlsi Metallization written by Krishna Shenai and has been published by Artech House Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.
This comprehensive collection of reprinted articles presents the most important developments on VLSI contact and interconnect technologies and applications. The book covers important developments in metallization of compound semiconductor technologies, and includes a section on metallization reliability and high speed testing.
Metal Semiconductor Interfaces
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Author : Akio Hiraki
language : en
Publisher: Ios PressInc
Release Date : 1995
Metal Semiconductor Interfaces written by Akio Hiraki and has been published by Ios PressInc this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.
This volume is a collection of papers written by the authors who were selected among the members of a project on ``Metal-Semiconductor Interfaces'' sponsored by the Ministry of Education, Science and Culture of Japan (MON-BUSHO). The M-S Interface is a problem which stems from the 1930's when the concept of surface states was first proposed by Tamm, shortly later by Shockley, and then clearly by Bardeen in 1947 to catalyze the invention of the transistor, and still exists today when one can count almost one billion M-S interfaces or contacts in a Si chip whose size is less than 1 cm square. Consequently, there have been plenty of research activities all over the world, especially over the last 15 years. The ``M-S Interfaces'' project was composed of four research branches to tackle the following subjects to be reported in the book: Theoretical Approaches, Initial Stage of M-S Interface Formation, Interface Structure of M-S Systems, Realization and Control of Contact Characterization, and Novel Characterization Techniques of Buried Interfaces.
Metallization
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Author : S. P. Murarka
language : en
Publisher: Butterworth-Heinemann
Release Date : 1993
Metallization written by S. P. Murarka and has been published by Butterworth-Heinemann this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Computers categories.
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
Interfaces Of Electrical Contacts In Organic Semiconductor Devices
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Author : Korhan Demirkan
language : en
Publisher: ProQuest
Release Date : 2008
Interfaces Of Electrical Contacts In Organic Semiconductor Devices written by Korhan Demirkan and has been published by ProQuest this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Electric contacts categories.
Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5,2'-ethyl-hexyloxy-phenylene vinylene) (MEH-PPV), polystyrene (PS) and ozone treated polystyrene (PS-O3) surfaces by thermal deposition of aluminum. Photoelectron spectroscopy showed the degree of chemical interaction between Al and each polymer, for MEH-PPV, the chemical interactions were mainly through the C-O present in the side chain of the polymer structure. The chemical interaction of Al with polystyrene was less significant, but it showed a dramatic increase after ozone treatment of the polystyrene surface (due to the formation of exposed oxygen sites). Formation of metal oxide and metal-organic compound is detected during the Al metallization of MEH-PPV and ozone-treated PS surfaces. Our results showed that the condensation of Al on polymer surfaces is highly dependent on surface reactivity. Enormous differences were observed for the condensation coefficient of Al on PS and PS-O3 surfaces. For the inert PS surface, results showed that Al atoms poorly wet the polymer surface and form distributed clusters at the surface. Results on reactive polymer surfaces suggest morphology reminiscent of a Stranski- Krastanov-type growth and high contact area. Many studies have shown that the insertion of a thin interlayer of the oxide or fluoride of alkali or alkaline metals between the low work function electrode and the organic semiconductor layers dramatically lowers the onset voltage and increases the efficiency compared to identical devices without the insulating layer. Various modes have been suggested for the mechanism of device performance enhancement. We have investigated the chemical and electrical interaction of (i) LiF with MEH-PPV, (ii) Al with MEH-PPV in the presence of a thin LiF layer at the interface, and finally (iii) the interaction of Al with LiF. AFM and XPS data showed that LiF forms island on the surface. Our data in agreement with various existing models suggested the (i) alteration in the electronic properties under applied bias, (ii) doping of the organic semiconductor, (iii) formation of metal alloy (Au-Li). In addition to the possible electrical modifications at the interface suggested previously, our data also suggest a change in the film growth on LiF modified surfaces.
Electronic Structure Of Metal Semiconductor Contacts
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Structure Of Metal Semiconductor Contacts written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Formation Of Semiconductor Interfaces Proceedings Of The 4th International Conference
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Author : J Pollman
language : en
Publisher: World Scientific
Release Date : 1994-06-09
Formation Of Semiconductor Interfaces Proceedings Of The 4th International Conference written by J Pollman and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-06-09 with categories.
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Semiconductor Interfaces Microstructures And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 1993-01-01
Semiconductor Interfaces Microstructures And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Science categories.
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Handbook Of Multilevel Metallization For Integrated Circuits
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Author : Syd R. Wilson
language : en
Publisher: William Andrew
Release Date : 1993
Handbook Of Multilevel Metallization For Integrated Circuits written by Syd R. Wilson and has been published by William Andrew this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Technology & Engineering categories.
It is widely recognized that the successful design, development, and integration of multilevel metallization (MLM) systems is and will continue to be key to current and future VLSI technologies. All major semiconductor companies have significant ongoing research teams focused in this area. These teams must view multilevel metallization as a system rather than a collection of isolated process modules.