Models For Large Integrated Circuits
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Models For Large Integrated Circuits
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Author : Patrick DeWilde
language : en
Publisher: Springer
Release Date : 2012-01-04
Models For Large Integrated Circuits written by Patrick DeWilde and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-01-04 with Technology & Engineering categories.
A modern microelectronic circuit can be compared to a large construction, a large city, on a very small area. A memory chip, a DRAM, may have up to 64 million bit locations on a surface of a few square centimeters. Each new generation of integrated circuit- generations are measured by factors of four in overall complexity -requires a substantial increase in density from the current technology, added precision, a decrease of the size of geometric features, and an increase in the total usable surface. The microelectronic industry has set the trend. Ultra large funds have been invested in the construction of new plants to produce the ultra large-scale circuits with utmost precision under the most severe conditions. The decrease in feature size to submicrons -0.7 micron is quickly becoming availabl- does not only bring technological problems. New design problems arise as well. The elements from which microelectronic circuits are build, transistors and interconnects, have different shape and behave differently than before. Phenomena that could be neglected in a four micron technology, such as the non-uniformity of the doping profile in a transistor, or the mutual capacitance between two wires, now play an important role in circuit design. This situation does not make the life of the electronic designer easier: he has to take many more parasitic effects into account, up to the point that his ideal design will not function as originally planned.
Models For Large Integrated Circuits
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Author : Patrick DeWilde
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Models For Large Integrated Circuits written by Patrick DeWilde and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
A modern microelectronic circuit can be compared to a large construction, a large city, on a very small area. A memory chip, a DRAM, may have up to 64 million bit locations on a surface of a few square centimeters. Each new generation of integrated circuit- generations are measured by factors of four in overall complexity -requires a substantial increase in density from the current technology, added precision, a decrease of the size of geometric features, and an increase in the total usable surface. The microelectronic industry has set the trend. Ultra large funds have been invested in the construction of new plants to produce the ultra large-scale circuits with utmost precision under the most severe conditions. The decrease in feature size to submicrons -0.7 micron is quickly becoming availabl- does not only bring technological problems. New design problems arise as well. The elements from which microelectronic circuits are build, transistors and interconnects, have different shape and behave differently than before. Phenomena that could be neglected in a four micron technology, such as the non-uniformity of the doping profile in a transistor, or the mutual capacitance between two wires, now play an important role in circuit design. This situation does not make the life of the electronic designer easier: he has to take many more parasitic effects into account, up to the point that his ideal design will not function as originally planned.
Mosfet Models For Vlsi Circuit Simulation
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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Charge Based Mos Transistor Modeling
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Author : Christian C. Enz
language : en
Publisher: John Wiley & Sons
Release Date : 2006-08-14
Charge Based Mos Transistor Modeling written by Christian C. Enz and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-14 with Technology & Engineering categories.
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Compact Transistor Modelling For Circuit Design
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Author : Henk C. de Graaff
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Compact Transistor Modelling For Circuit Design written by Henk C. de Graaff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Compact Models For Integrated Circuit Design
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Author : Samar K. Saha
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Compact Models For Integrated Circuit Design written by Samar K. Saha and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Mosfet Models For Vlsi Circuit Simulation
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Author : Narain Arora
language : en
Publisher: Springer
Release Date : 1993-01-01
Mosfet Models For Vlsi Circuit Simulation written by Narain Arora and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Integrated circuits categories.
The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.
Modeling Of Integrated Circuits As Components Of Large Systems
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Author : D. N. Pocock
language : en
Publisher:
Release Date : 1972
Modeling Of Integrated Circuits As Components Of Large Systems written by D. N. Pocock and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with Digital integrated circuits categories.
Results are presented on generalized approaches to derive radiation-inclusive simplified models of linear and digital microcircuits. Application of the principle of superposition allows generation of a compact small-signal model of the linear microcircuit, with extension of the model to include large-signal saturation effects. The digital microcircuit model is the combination of current-voltage terminal networks with a logical decision function to represent the truth table of the device. The techniques are used to generate terminal models of an integrated-circuit operational amplifier, voltage comparator, and J-K flip-flop. A factor of 20 to 50 improvement in required computer time and storage was realized with the terminal models over detailed models, with no significant loss in the representation of key performance parameters or radiation environment vulnerability. Preliminary modeling results on the phase-locked loop nonlinear analog microcircuit are also presented. (Author).
Vlsi Very Large Scale Integrated Circuits Device Reliability Models
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Author : D. Coit
language : en
Publisher:
Release Date : 1984
Vlsi Very Large Scale Integrated Circuits Device Reliability Models written by D. Coit and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
This report details a study in which the objective was to develop failure rate prediction models for VLSI, Hybrid, analog microprocessor, and VHSIC devices. A description is given of the various phases involved in reliability prediction model development, such as; literature collection/review, investigation of failure modes, failure rate data collection, statistical analysis methodologies, model factors quantification, and model validation. For VLSI, Hybrid and analog microprocessor devices, the models are given in a form which can easily be included in MIL-HDBK-217. For VHSIC devices, this effort was necessarily limited to the identification of necessary model factors (attributes) which should be included in a quantitative model acceptable for inclusion in MIL-HDBK-217. This effort was necessarily limited to the development of a qualitative reliability prediction model due to the lack of available data on VHSIC devices at the time of this study. Keywords include: VLSI, Hybrid microcircuit, Integrated circuit, Failure rate, MIL-HDBK-217, and Reliability prediction.
Digital Integrated Circuits
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Author : Evgeni Perelroyzen
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Digital Integrated Circuits written by Evgeni Perelroyzen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Computers categories.
A current trend in digital design-the integration of the MATLAB® components Simulink® and Stateflow® for model building, simulations, system testing, and fault detection-allows for better control over the design flow process and, ultimately, for better system results. Digital Integrated Circuits: Design-for-Test Using Simulink® and Stateflow® illustrates the construction of Simulink models for digital project test benches in certain design-for-test fields. The first two chapters of the book describe the major tools used for design-for-test. The author explains the process of Simulink model building, presents the main library blocks of Simulink, and examines the development of finite-state machine modeling using Stateflow diagrams. Subsequent chapters provide examples of Simulink modeling and simulation for the latest design-for-test fields, including combinational and sequential circuits, controllability, and observability; deterministic algorithms; digital circuit dynamics; timing verification; built-in self-test (BIST) architecture; scan cell operations; and functional and diagnostic testing. The book also discusses the automatic test pattern generation (ATPG) process, the logical determinant theory, and joint test action group (JTAG) interface models. Digital Integrated Circuits explores the possibilities of MATLAB's tools in the development of application-specific integrated circuit (ASIC) design systems. The book shows how to incorporate Simulink and Stateflow into the process of modern digital design.