Mos Field Effect Transistors And Integrated Circuits
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Mos Field Effect Transistors And Integrated Circuits
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Author : Paul Richman
language : en
Publisher: Wiley-Interscience
Release Date : 1973
Mos Field Effect Transistors And Integrated Circuits written by Paul Richman and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1973 with Science categories.
Field Effect Transistors In Integrated Circuits
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Author : J. Torkel Wallmark
language : en
Publisher: John Wiley & Sons
Release Date : 1974
Field Effect Transistors In Integrated Circuits written by J. Torkel Wallmark and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Technology & Engineering categories.
Mosfet In Circuit Design Metal Oxide Semiconductor Field Effect Transistors For Discrete And Integrated Circuit Technology
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Author : Robert H. Crawford
language : en
Publisher:
Release Date : 1967
Mosfet In Circuit Design Metal Oxide Semiconductor Field Effect Transistors For Discrete And Integrated Circuit Technology written by Robert H. Crawford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Field-effect transistors categories.
System Integration
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Author : Kurt Hoffmann
language : en
Publisher: John Wiley & Sons
Release Date : 2006-02-08
System Integration written by Kurt Hoffmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-08 with Technology & Engineering categories.
The development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this unique book ranges from field effect transistor design, MOS transistor modelling and the fundamentals of digital CMOS circuit design through to MOS memory architecture and design. Highlights the increasing requirement for information on system-on-a-chip design and integration. Combines coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume for the first time. Written with the aim of bridging the gap between semiconductor device physics and practical circuit design. Introduces the basic behaviour of semiconductor components for ICs and covers the design of both digital and analog circuits in CMOS and BiCMOS technologies. Broad coverage will appeal to both students and practising engineers alike. Written by a respected expert in the field with a proven track record of publications in this field. Drawing upon considerable experience within both industry and academia, Hoffmann’s outstanding text, will prove an invaluable resource for designers, practising engineers in the semiconductor device field and electronics systems industry as well as Postgraduate students of microelectronics, electrical and computer engineering.
Operation And Modeling Of The Mos Transistor
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Author : Yannis Tsividis
language : en
Publisher: McGraw-Hill Science, Engineering & Mathematics
Release Date : 1987
Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by McGraw-Hill Science, Engineering & Mathematics this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Technology & Engineering categories.
Charge Based Mos Transistor Modeling
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Author : Christian C. Enz
language : en
Publisher: John Wiley & Sons
Release Date : 2006-08-14
Charge Based Mos Transistor Modeling written by Christian C. Enz and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-14 with Technology & Engineering categories.
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Mos And Special Purpose Bipolar Integrated Circuits And R F Power Transistor Circuit Design
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Author : Bryan Norris
language : en
Publisher: McGraw-Hill Companies
Release Date : 1976
Mos And Special Purpose Bipolar Integrated Circuits And R F Power Transistor Circuit Design written by Bryan Norris and has been published by McGraw-Hill Companies this book supported file pdf, txt, epub, kindle and other format this book has been release on 1976 with Technology & Engineering categories.
Theory And Applications Of Field Effect Transistors
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Author : Richard S. C. Cobbold
language : en
Publisher: New York : Wiley-Interscience
Release Date : 1970
Theory And Applications Of Field Effect Transistors written by Richard S. C. Cobbold and has been published by New York : Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1970 with Technology & Engineering categories.
Mos Devices For Low Voltage And Low Energy Applications
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Author : Yasuhisa Omura
language : en
Publisher: John Wiley & Sons
Release Date : 2017-02-28
Mos Devices For Low Voltage And Low Energy Applications written by Yasuhisa Omura and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-02-28 with Technology & Engineering categories.
Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil
Mosfet Modeling For Circuit Analysis And Design
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Author : Carlos Galup-Montoro
language : en
Publisher: World Scientific
Release Date : 2007
Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-Montoro and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.