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Mosfet Modeling For Circuit Analysis And Design

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Mosfet Modeling For Circuit Analysis And Design

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Author : Carlos Galup-Montoro
language : en
Publisher: World Scientific
Release Date : 2007

Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-Montoro and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Cmos Analog Design Using All Region Mosfet Modeling

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Author : Márcio Cherem Schneider
language : en
Publisher: Cambridge University Press
Release Date : 2010-01-28

Cmos Analog Design Using All Region Mosfet Modeling written by Márcio Cherem Schneider and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-01-28 with Computers categories.

The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Bsim4 And Mosfet Modeling For Ic Simulation

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Author : Weidong Liu
language : en
Publisher: World Scientific
Release Date : 2011

Bsim4 And Mosfet Modeling For Ic Simulation written by Weidong Liu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Technology & Engineering categories.

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

The Physics And Modeling Of Mosfets

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Author : Mitiko Miura-Mattausch
language : en
Publisher: World Scientific
Release Date : 2008

The Physics And Modeling Of Mosfets written by Mitiko Miura-Mattausch and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Compact Models For Integrated Circuit Design

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Author : Samar K. Saha
language : en
Publisher: CRC Press
Release Date : 2018-09-03

Compact Models For Integrated Circuit Design written by Samar K. Saha and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Analysis And Design Of Mosfets

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Author : Juin Jei Liou
language : en
Publisher: Springer Science & Business Media
Release Date : 1998-09-30

Analysis And Design Of Mosfets written by Juin Jei Liou and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-09-30 with Science categories.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Mosfet Models For Vlsi Circuit Simulation

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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Analysis And Design Of Mosfets

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Author : Juin Jei Liou
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Mosfet Modeling Bsim3 User S Guide

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Author : Yuhua Cheng
language : en
Publisher: Springer Science & Business Media
Release Date : 1999-09-30

Mosfet Modeling Bsim3 User S Guide written by Yuhua Cheng and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-09-30 with Technology & Engineering categories.

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Introduction To Circuit Analysis And Design

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Author : Tildon H. Glisson
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-02-18

Introduction To Circuit Analysis And Design written by Tildon H. Glisson and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-02-18 with Technology & Engineering categories.

Introduction to Circuit Analysis and Design takes the view that circuits have inputs and outputs, and that relations between inputs and outputs and the terminal characteristics of circuits at input and output ports are all-important in analysis and design. Two-port models, input resistance, output impedance, gain, loading effects, and frequency response are treated in more depth than is traditional. Due attention to these topics is essential preparation for design, provides useful preparation for subsequent courses in electronic devices and circuits, and eases the transition from circuits to systems.

Mosfet Modeling For Circuit Analysis And Design

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