Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications
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Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications
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Author : Peter Capper
language : en
Publisher: Springer Science & Business Media
Release Date : 1997-10-31
Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications written by Peter Capper and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-10-31 with Technology & Engineering categories.
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.
Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications
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Author : Peter Capper
language : en
Publisher: Springer
Release Date : 1997-11-14
Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications written by Peter Capper and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-11-14 with Technology & Engineering categories.
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.
Narrow Gap Semiconductor Photodiodes
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Author : Antoni Rogalski
language : en
Publisher: SPIE Press
Release Date : 2000
Narrow Gap Semiconductor Photodiodes written by Antoni Rogalski and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Infrared Detectors And Emitters Materials And Devices
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Author : Peter Capper
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Infrared Detectors And Emitters Materials And Devices written by Peter Capper and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at ambient temperature but have disadvantages of insensitivity and slowness. A wide variety of semiconductor photon detectors have been developed and these possess very high sensitivity, high frequency response but have the disadvantage of needing cryogenic cooling, particularly at longer wavelengths. In the main, the applications have been in the military sphere, but widespread industrial and scientific applications also exist. The majority of development funding for these semiconducting IR detectors has, however, come from military sources. This book is an attempt to provide an up-to-date view of the various IR detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers to the field and at those already working in the IR industry. It is hoped that the former will find the book readable both as an introductory text and as a useful guide to the literature. Workers in one of the various IR areas will, hopefully, find the book useful in bringing them up-to-date with other, sometimes competing, technologies. To both groups of readers we trust that the book will prove interesting, thought-provoking and a spur to further progress in this fascinating and challenging field of endeavour.
Liquid Phase Epitaxy Of Electronic Optical And Optoelectronic Materials
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Author : Peter Capper
language : en
Publisher: John Wiley & Sons
Release Date : 2007-08-20
Liquid Phase Epitaxy Of Electronic Optical And Optoelectronic Materials written by Peter Capper and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-08-20 with Technology & Engineering categories.
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Infrared Detectors
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Author : Antonio Rogalski
language : en
Publisher: CRC Press
Release Date : 2010-11-15
Infrared Detectors written by Antonio Rogalski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-11-15 with Science categories.
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Physical Models Of Semiconductor Quantum Devices
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Author : Ying Fu
language : en
Publisher: Springer
Release Date : 2013-11-27
Physical Models Of Semiconductor Quantum Devices written by Ying Fu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
Solid state electronics is undergoing rapid changes driven by heteroepitaxy, lithography, and new device concepts. While ten years ago Si was the material of choice in solid state electronics, now GaAs, InGaAs ,AlAs,InP, Ge,etc. have all become quite important. The advent of semiconductor lasers and integrated optoelectronic circuits has led to a flurry of activities in compound semiconductors. Additionally, the remarkable advances in the thin film epitaxy have allowed active semiconductor devices with sub-three-dimensional properties and built-in controlled biaxial strain due to lattice mismatch. This book addresses three main areas of interest: i) electronic and optical properties oflow dimensional semiconductor materials; ii) principal physics of quantum electronic devices, iii) principal physics of quantum optical devices. These areas will provide readers with an intimate knowledge of the new material properties on which novel solid state electronic devices such as quantum diode, and small size transistor, high electron mobility transistor are based, leading to the very front of the development of material and device research. The link between basic physics on which the real devices are based and the output from the real devices is closely observed in the book. Chapter 1 Elemental and compound semicond uctors 1. 1 Crystalline nat ure of solids The intrinsic property of a crystal is that the environment around a given atom or group of atoms is exactly the same as the environment around another atom or similar group of atoms.
Theory Of Transport Properties Of Semiconductor Nanostructures
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Author : Eckehard Schöll
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Theory Of Transport Properties Of Semiconductor Nanostructures written by Eckehard Schöll and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Quantum Semiconductor Devices And Technologies
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Author : Tom Pearsall
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Quantum Semiconductor Devices And Technologies written by Tom Pearsall and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.
Infrared And Terahertz Detectors Third Edition
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Author : Antoni Rogalski
language : en
Publisher: CRC Press
Release Date : 2019-01-10
Infrared And Terahertz Detectors Third Edition written by Antoni Rogalski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-10 with Technology & Engineering categories.
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.