Nitride Semiconductors Volume 482
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Nitride Semiconductors Volume 482
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 1998-04-20
Nitride Semiconductors Volume 482 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-04-20 with Technology & Engineering categories.
This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
Low Dimensional Nitride Semiconductors
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Author : Bernard Gil
language : en
Publisher:
Release Date : 2002
Low Dimensional Nitride Semiconductors written by Bernard Gil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Iii V Nitride Semiconductors
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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30
Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-30 with Technology & Engineering categories.
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Iii Nitride Semiconductors Electrical Structural And Defects Properties
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Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06
Iii Nitride Semiconductors Electrical Structural And Defects Properties written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Iii Nitride Semiconductors And Their Modern Devices
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Author : Bernard Gil
language : en
Publisher: Oxford University Press
Release Date : 2013-08-22
Iii Nitride Semiconductors And Their Modern Devices written by Bernard Gil and has been published by Oxford University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-22 with Science categories.
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Iii V Nitride Semiconductors
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Author : E. T. Yu
language : en
Publisher:
Release Date : 2019
Iii V Nitride Semiconductors written by E. T. Yu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Nitrides categories.
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Infrared Applications Of Semiconductors Ii Volume 484
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Author : Donald L. McDaniel
language : en
Publisher:
Release Date : 1998-04-20
Infrared Applications Of Semiconductors Ii Volume 484 written by Donald L. McDaniel and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-04-20 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Semiconductors For Room Temperature Radiation Detector Applications Ii Volume 487
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Author : R. B. James
language : en
Publisher:
Release Date : 1997
Semiconductors For Room Temperature Radiation Detector Applications Ii Volume 487 written by R. B. James and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
Contains papers from a December 1997 symposium on semiconductor radiation detectors for use in the energy range of a few eV to about 5 MeV. Primary emphasis is on developing semiconductor X-ray and gamma- ray detectors and imagers which combine the advantages of room- temperature operation with the excellent energy resolution of cryogenically cooled spectrometers. Papers are arranged in sections on cadmium zinc telluride growth, material properties, detectors, and systems; mercury and lead iodide materials, detectors, and systems; Group IV and III-V materials, detectors, and systems; ZnSe and ZnS materials and detectors; analysis and characteristics of detectors, systems, and applications; and IR materials and detectors. Annotation copyrighted by Book News, Inc., Portland, OR
Handbook Of Nitride Semiconductors And Devices
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Author : Hadis Morkoç
language : en
Publisher:
Release Date : 2008
Handbook Of Nitride Semiconductors And Devices written by Hadis Morkoç and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Nitrides categories.
Power Semiconductor Materials And Devices Volume 483
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Author : S. J. Pearton
language : en
Publisher: Mrs Proceedings
Release Date : 1997
Power Semiconductor Materials And Devices Volume 483 written by S. J. Pearton and has been published by Mrs Proceedings this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.