Photonic Crystal Enhanced Electrooptic Polymer Based Optical Modulators For Realization Of Integrated 40 Gs S All Optical Analog Digital Converters With 8 Effective Number Of Bits
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Photonic Crystal Enhanced Electrooptic Polymer Based Optical Modulators For Realization Of Integrated 40 Gs S All Optical Analog Digital Converters With 8 Effective Number Of Bits
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Author : Kai Wei
language : en
Publisher:
Release Date : 2021
Photonic Crystal Enhanced Electrooptic Polymer Based Optical Modulators For Realization Of Integrated 40 Gs S All Optical Analog Digital Converters With 8 Effective Number Of Bits written by Kai Wei and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with Analog-to-digital converters categories.
High-speed, broadband, and compact analog-to-digital converters (ADC) are the key components in signal waveform generation and efficient detection for future telecommunication and remote sensing applications. Canonical electronic ADCs suffers from limited effective number of bits (ENOB) at giga-sampling rate due to electronic clock aperture jitter and comparator ambiguity due to the transistor bandwidth limitations. An electrically interleaved ADC operating at lower sampling rates or a hybrid ADC using optically sampled and electrically quantized structures that leverages the low optical aperture jitter of mode-locked laser and high-resolution electronic quantization are not only power consuming but are also limited in effective sampling rate within 10 GS/s as the quantizer outputs still must be accurately aligned in time to form the input information in electronic domain. On the other hand, the reported all-optical ADC (AOADC) benefits from the low jitter of optical clock, while quantizes the input signal in optical domain using spatial modulation. In this dissertation, various design innovations leading to paths of a fully integrated 40 GS/s AOADC with 8 ENOB by incorporating integrated stable clock using self-forced optical phase modulator (PM) based opto-electronic oscillators (OEO) and single-channel spatial light modulator (SLM) by advancing research innovations of the past laboratory graduates.Design of optical PM and SLM designs are based on broadband traveling-wave coupled microstrip (CMS) electrode structures with improved phase and angular deflection modulation using slow-waveguiding behavior of 1-D photonic crystal (PhC) topologies as superstrate using optical beam propagation (OptiBPM), finite-difference-time-domain (OptiFDTD), and finite element method (HFSS). Optimized design geometries of 1-D PhC over 1550 nm is considered to minimize the optical loss while the modulation sensitivity is enhanced by about 108% compared to modulator designs without the PhC layer. Similar spatial modulation sensitivity improvements are achieved for SLMs with leaky wave designs. These designs are implemented on low-cost Si-photonics and electro-optic (E-O) chromophores on low loss and higher index PMMI host material rather than standard PMMA. Novel design of OEO based on PM rather than Mach-Zehnder modulator (MZM) has advantage of bias voltage independence that makes OEO less sensitive to shift in bias voltage due to piezo-electric or pyro-electric properties of E-O material, but then requires phase to intensity modulators (PM-IM). Sagnac-loop based OEO is demonstrated, where close-in to carrier phase noise at 10 GHz are reduced using self-forced techniques of self-injection locking and dual self-phase-locked loop (SILDPLL) for long-term stability of optical clocks to predict timing jitter as low as 19.5 fs using 3-/5-km fiber mandrills in modular experiment.To achieve a monolithically integrated AOADC consisting of the proposed SLM and stable optical clock provided by OEOs with the estimated performance, a heterogeneously integrated InP multi-mode laser (MML) as an on-chip OEO source, where inter-modal oscillation and PM-IM convertor rather than relying on Sagnac-loop design, where a non-reciprocal phase shifter (NRPS) is not compatible with Si on-chip integration at the present. RF signal generated from MML typically suffers poor stabilization and 25-fold reduction in timing jitter is measured compared to the free-running case, when SEILDPLL with external optical delays of 5-/15-(mu)s are employed. Moreover, for a fully integrated design rather than modular fiber mandrills, both non-dispersive and dispersive add-drop filter (ADF) resonators are modeled using both full-wave OptiFDTD and proven MATLAB codes on SiN based optical time delays of 975 ns within a chip area of 27 cm2 and 0.1 cm2, respectively. Furthermore, limits of performance improvements using a combined stabilization processes of self-mode-locking (SML) techniques and self-forced SML are investigated. Timing jitter of a 13-mode SML (e.g., fabricated using HHI foundry service) with 700 ns SEIL and 700-/900-ns DSPLL integrated IOEO is estimated to be only 7.6 fs at 10 GHz.
Novel Eo Polymer Based Micro And Nano Photonic Devices For Analog And Digital Communications
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Author : Beom Suk Lee
language : en
Publisher:
Release Date : 2011
Novel Eo Polymer Based Micro And Nano Photonic Devices For Analog And Digital Communications written by Beom Suk Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Polymer-based electro-optical modulators are, generally, applicable to many fields but their applications to analog optical links and silicon photonic integrated circuits are specifically emphasized in this dissertation. This dissertation aims to improve the linearity characteristics of polymer-based electro-optic modulators for their practical application in high speed analog optical links. Domain-inversion technique is employed to linearize a two-section Y-fed directional coupler modulator. The spurious free dynamic range as high as 119dB/Hz2/3 has been demonstrated with 11dB enhancement over the conventional Mach-Zehnder modulator at low frequency. For high speed modulation, a traveling wave electrode with low RF loss and large bandwidth is designed and installed in a linearized Y-fed directional coupler modulator. The spurious free dynamic range has been measured in the range of 110±3dB/Hz2/3 at 2~8GHz frequency. For digital application of polymer-based electro-optic modulators, a hybrid silicon photonic crystal waveguide modulator was investigated with focus on size-reduction and electro-optic efficiency enhancement. The slow group velocity of photonic crystal waveguides promises two orders of magnitude size-reduction in device footprint compared with the conventional strip waveguide. Infiltration of an electro-optic polymer into the slot waveguide can infuse silicon with nonlinear optical properties. To actualize these benefits of a hybrid silicon photonic crystal waveguide modulator, nano-fabrication process was developed and optimized in this work.
E O Polymer Based Optical Phase Modulator And Its Performance Enhancement Using Slow Wave Structures
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Author : Kevin Receveur
language : en
Publisher:
Release Date : 2016
E O Polymer Based Optical Phase Modulator And Its Performance Enhancement Using Slow Wave Structures written by Kevin Receveur and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with Electrical engineering categories.
Electro-optic (EO) polymers have proved to be promising for use in optical modulators due to their broad bandwidth and higher electro-optic coefficient compared to conventional inorganic ceramics, while maintaining compatibility with Si-Photonics hence lowering the manufacturing cost. While modulator designs using EO polymers have been explored previously, these designs require a long length (>1cm) to obtain a phase shift of 180o at reasonable voltage levels. In order to produce a modulator with a smaller footprint, the device must have a low figure of merit of VÏ0xL. Conventional EO polymer-based modulators offer decent bandwidth characteristics (>50GHz), however, the length - half wave voltage tradeoff limits the size and the practicality. In recent years, the use of slow-wave photonic crystal (PhC) structures has been shown to enhance the half wave voltage without increasing the modulator length. The goal of this work is to enhance phase sensitivity performance of an electro-optic (EO) polymer based phase modulator (PM) design by utilizing PhC structures. The addition of a PhC structure produces a slow-wave effect, which allows for control of the group velocity of the optical wave in the core of the integrated optic channel. PhC structures consist of a base substrate with a second material added along periodic lattice, in close proximity to the core of the optical waveguide. Analysis and numerical calculation group velocity in 1D and 2D PhC structures showed an increase in the effective group index of refraction, indicating a slowed group velocity of the lightwave. These structures were modeled using MATLAB by considering periodic structures to obtain the sensitivity of the group index of refraction in relation to cell size and periodicity. The PhC structure was analytically modeled and then verified using periodic boundaries utilizing finite element method (FEM). The FEM based HFSS simulation has included 1D and 2D PhC topologies using material combinations of PMMA/Air or PMMA/Si3N4 structures. The primary goal of this thesis is then achieved by adding the modeled slow wave structure to a traveling-wave EO polymer-based phase modulator as either a substrate or superstrate to the optical core. To quantify the phase modulation sensitivity improvement, the traveling wave phase modulator was modeled first using FEM and beam propagation methods (BPM) to model RF and optical characteristics. Then, both substrate and superstrate topologies are introduced to the PM design. Utilizing both techniques, the EO polymer based PM design with an added PhC structure reduces the length voltage product required to achieve optical phase of 180o. Phase improvement due to the added structure was achieved through modulator simulation, yielding an improved effective EO coefficient of 162.2 pm/V compared to 67.9pm/V from the original modulator. The optimal topology a high phase improvement was chosen to be the superstrate design using a 2D PMMA/Air topology, whereas the most practical manufacturing challenge was chosen to be the 2D PMMA/Si3N4 topology with a superstrate design.
Broadband Optical Modulators
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Author : Antao Chen
language : en
Publisher: CRC Press
Release Date : 2016-04-19
Broadband Optical Modulators written by Antao Chen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Science categories.
"provides the full, exciting story of optical modulators. a comprehensive review, from the fundamental science to the material and processing technology to the optimized device design to the multitude of applications for which broadband optical modulators bring great value. Especially valuable in my view is that the authors are internationally
Electro Optical Modulator In A Polymer Infiltrated Silicon Slotted Photonic Crystal Waveguide Heterostructure Resonator
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Author :
language : en
Publisher:
Release Date : 2008
Electro Optical Modulator In A Polymer Infiltrated Silicon Slotted Photonic Crystal Waveguide Heterostructure Resonator written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
40 Ghz Electro Optic Modulation In Hybrid Silicon Organic Slotted Photonic Crystal Waveguides
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Author :
language : en
Publisher:
Release Date : 2010
40 Ghz Electro Optic Modulation In Hybrid Silicon Organic Slotted Photonic Crystal Waveguides written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Electro Optic Modulation In Slotted Resonant Photonic Crystal Heterostructures
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Author :
language : en
Publisher:
Release Date : 2009
Electro Optic Modulation In Slotted Resonant Photonic Crystal Heterostructures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Toward An Ultra Low Energy Cmos Compatible Electro Optical Modulator For On Chip Optical Interconnects
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Author : Sean P. Anderson
language : en
Publisher:
Release Date : 2011
Toward An Ultra Low Energy Cmos Compatible Electro Optical Modulator For On Chip Optical Interconnects written by Sean P. Anderson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
"The continually increasing speed of microprocessors over the past forty years has been due in large part to miniaturization. The smaller a transistor is made, the faster it can run, and the more can be packed onto a chip. More recently, the performance of the electrical interconnects, which are responsible for transporting data within the microprocessor and between the microprocessor and memory, has been unable to keep pace. As the interconnect is scaled down along with the transistors, its bandwidth decreases and its latency and power consumption increase. This not only decreases the bandwidth of the interconnect, but also increases both its latency and power consumption. Optical interconnects can directly address these problems by replacing electrical interconnects at the system level. In this work we outline the requirements for a successful optical interconnect, and show that the photonic crystal platform is ideal for optical interconnects. Specifically, we show how photonic crystals can be used to build one of the most basic components of an optical interconnect: the electro-optic modulator, which converts an electrical signal into the optical domain. We will first discuss the potential of photonic crystal slow light for modulation, and then introduce a new multi-channel slow light platform for improved bandwidth. Next we describe the design of a photonic crystal resonator that is embedded entirely in silicon dioxide, which is a fundamental requirement for chip compatibility. This resonator uses a graded cavity design and has a quality factor as high as 300,000. It can be coupled to standard strip waveguides, facilitating the integration of photonic crystal devices with other photonic devices. We will also describe a simplified model of photonic crystal line-defect cavities that can aid in their design. Finally, we propose a design for a low-energy electro-optic modulator based on this graded cavity. Due to the extremely small mode volume possible with photonic crystal resonators, the active region can be on the order of a single cubic wavelength in size. By optimizing a number of parameters, a theoretical switching energy as low as 1 fJ/ bit is possible using this design."--Leaves viii-ix.
Silicon Photonic Interferometric Modulators
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Author : David Patel
language : en
Publisher:
Release Date : 2019
Silicon Photonic Interferometric Modulators written by David Patel and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
"In recent years, the amount of traffic within data centers has increased to a point where electrical interconnects are being replaced by optical interconnects and pluggable modules. Silicon photonics, which uses the existing CMOS fabrication capabilities to develop integrated photonics, offers the ability to make compact devices in high volume with relatively better yield. This makes it a highly desired platform to develop optical transceivers and components for modern data centers. As such, it has recently reached the production phase of the technology development cycle. This thesis studies several devices that are applicablein leading data centers. A detailed analysis and characterization of a silicon Michelson modulator with short 500 um phase shifters and a low VpiLpi of 0.72 V-cm under reverse bias is presented. The optical modulation of reverse biased p-n and forward biased p-i-n junctions is investigated. For reverse bias operation, it is demonstrated that bandwidth can be increased with lower impedance drivers and the driver impedance limits the bitrate achievable. Furthermore, forward bias operation with pre-emphasized signals is shown to have clean eye diagrams up to 40 Gbps. Energy consumption is estimated for all cases of studies and their trade-offs are explained.The work on modulators is further developed by studying series push-pull traveling wave Mach-Zehnder modulators. Measurements of electrodes is compared with simulation validating the methods of increasing impedance and microwave effective index with T-shaped electrodes. Moreover, designs with two and three level implants are compared and it is concluded with measurements that a two level doping design is as good as the design with three level implants, thus reducing the number of masks and processing steps required. Another variation of modulators is the dual-drive modulators. Here, the spacing between electrodes can lead to coupling, which results in different responses depending on whether the modulator is driven single-endedly or differentially. The electro-optic frequency response of a four-port traveling-wave dual-drive modulator with relatively weak coupling amongst the electrodes is measured. It is shown that the electro-optic frequency response of the Mach-Zehnder modulator can be predicted with a 2x2 cascaded matrix model if the Mach-Zehnder modulator is symmetric and differentially driven. In recent years, the increase in data transfers has demanded that more bits be transmitted and received in a given bandwidth. The design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator is reported in this thesis. This 2-bit electro-optic digital-to-analog converter is formed by dividing a series push-pull Mach-Zehnder modulator into two segments, one for each bit, thus allowing for PAM-4 modulation without using a digital-to-analog converter. The device is operated at speeds up to 50 Gbaud and thus generating 100 Gbps on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction bit error rate is estimated to be lower than the hard-decision forward error correction threshold of 3.8e-3 over 1 km of standard single-mode fiber.Another component that is crucial in optical networks is the optical switch. The optical switch has numerous applications in protection and restoration as well as in certain modern data center architectures. A 4x4 fully non-blocking crossbar switch fabric based on interferometric thermal phase shifters is developed and reported in this thesis. Here, heating is achieved using resistive elements around the silicon waveguide. Switching times of 5 us and 36 mW power consumption in an individual switching element is measured. As a proof of concept, the quality in degradation of switching is demonstrated by routing an input signal to some of the outputs of the switch." --
Performance Enhancement Of Opto Electronic Oscillators Using Photonic Bandgap Phase And Mach Zehnder Modulators
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Author : Francis T. Pantano
language : en
Publisher:
Release Date : 2017
Performance Enhancement Of Opto Electronic Oscillators Using Photonic Bandgap Phase And Mach Zehnder Modulators written by Francis T. Pantano and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Electrical engineering categories.
Highly stable oscillators are an important component in heterodyne receivers used in telecommunications, remote sensing, and instrumentation. Stable oscillators require high quality factor (Q) resonators that are challenging at radio frequencies of above 1GHz. The opto-electronic oscillators (OEO) using long low-loss fiber optic (FO) delay lines are developed for stable local oscillators for a variety of radio frequency (RF) applications at frequencies of 10 GHz and above. The OEO takes advantage of optical modulation by stable RF signal before transmission over kilometer long fiber spools. The optical modulation is being done using phase modulation, or interferometric modulation using the Mach-Zehnder modulator (MZM). The phase sensitivity of the phase modulator (PM) and its losses influence the behavior of the PM or MZM, which is a critical component to the overall performance of FO delay line in the OEO, and particularly for the forced oscillation neucleation noise of the OEOs using self-injection locking (SIL) and self-phase locking (SPLL). To improve on sensitivity of the optical modulators, photonic bandgap (PBG) based PM and MZM structures are considered with electro-optic (EO) polymers to increase the modulation efficiency and modulation bandwidth using integrated Si-photonics structures. This thesis covers the modeling and performance of the OEO with both PBG based and the conventional realization of PMs and MZMs each with various insertion loss and half-wave voltage performance characteristics. The half-wave voltage, VÏ0, of the modulators is the voltage necessary to achieve a Ï0 radian (180o) phase shift. The phase noise and frequency stability at close-in and far away from carrier is analyzed with MZMs operating at the quadrature point (VÏ0/2) and their impact is demonstrated on the overall SILPLL OEO performance. The previously developed and experimentally demonstrated self-injection locked phase locked loop (SILPLL) OEO is used and the performance is predicted when a PBG based modulator with a VÏ0 of 2.17V and optical insertion loss of 1.6dB is used. The forced oscillation techniques of SIL and SPLL are also modeled to reduce the close-in to carrier phase noise of a 10GHz OEO. A Sagnac loop topology is analyzed and modeled as a method of performing the PM-IM conversion for the PM based OEO. The simulated phase noise performance for the PBG based PM is -149.6dBc/Hz as compared to -142.8dBc/Hz at 10kHz offset frequency for a conventional Lithium Niobate (LN) PM. At 10MHz offset frequency, the simulated phase noise is dominated by the amplitude noise of the FO delay line and for the PBG based PM is -166.5dBc/Hz compared to -158.3dBc/Hz for the conventional LN based PM. For the PBG based MZM, the simulated phase noise is -146.9dBc/Hz compared to -144.0dBc/Hz for the conventional MZM and -163.8dBc/Hz compared to -160.9dBc/Hz at offset frequency of 10kHz and 10MHz respectively. Time domain analyses of the Allan deviation and timing jitter are performed for each modulator and OEO topology. The Allan deviation at a sampling time of 10ms for the PBG based PM in the Sagnac loop SILPLL OEO was estimated to be 1.80x10-12, with an improvement from 2.80x10-12 for the conventional PM. Using the same topology, a jitter of 11.2fs was estimated, improving on calculated jitters of the conventional PM by 17.3fs. For the PBG based MZM in the SILPLL forced OEO, the Allan deviation at a sampling time of 10ms was calculated to be 2.47x10-12, improving by 2.40x10-12 from the conventional PM. A jitter of 15.3fs is expected, reducing by 14.9fs from the conventional PM's jitters. An analytical modeling and performance enhancement of both the standard and SILPLL OEO were presented in this thesis. Recommendation for experimental validations is also made in this thesis.