Physics Of Hot Electron Transport In Semiconductors
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Physics Of Hot Electron Transport In Semiconductors
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Author : C S Ting
language : en
Publisher: World Scientific
Release Date : 1992-04-14
Physics Of Hot Electron Transport In Semiconductors written by C S Ting and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-04-14 with Science categories.
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system. Contents:Balance-Equation Approach to Hot-Carrier Transport in Semiconductors (X L Lei & N J M Horing): Recent Developments in Magnetotransport Theory (N J M Horing et al.)Effect of Nonequilibrium Phonon on the Electron Relaxation and Transport (M Lax & W Cai)Nonlinear Transport of Electrons under a Strong High Frequency Electric Field in Semiconductors (W Cai & M Lax)Nonequilibrium Statistical Operator in Hot-Electron Transport Theory (D Y Xing & M Liu)Path Integral Study of Polaron Transport under High Electric Field (Z B Su): Impurity Resistivity under Thermalized Condition (C S Ting & L Y Chen)Nonequilibrium Green's Function Approach to Dynamic Properties of Resonant-Tunneling through Double Barrier Structures (L Y Chen & C S Ting) Readership: Physicists and electrical engineers. keywords:
Hot Electron Transport In Semiconductors
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Author : L. Reggiani
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-01-20
Hot Electron Transport In Semiconductors written by L. Reggiani and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-20 with Technology & Engineering categories.
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Hot Electron Transport In Semiconductors
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Author : L. Reggiani
language : en
Publisher: Springer
Release Date : 2014-03-12
Hot Electron Transport In Semiconductors written by L. Reggiani and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-12 with Technology & Engineering categories.
Hot Electrons In Semiconductors
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Author : N. Balkan
language : en
Publisher:
Release Date : 1998
Hot Electrons In Semiconductors written by N. Balkan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Physics Of Nonlinear Transport In Semiconductors
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Author : David K. Ferry
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Physics Of Nonlinear Transport In Semiconductors written by David K. Ferry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
Balance Equation Approach To Electron Transport In Semiconductors
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Author : Xiaolin Lei
language : en
Publisher:
Release Date : 2008
Balance Equation Approach To Electron Transport In Semiconductors written by Xiaolin Lei and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Electron Transport In Compound Semiconductors
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Author : B.R. Nag
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electron Transport In Compound Semiconductors written by B.R. Nag and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Physics Of Hot Electron Transport In Semiconductors
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Author : Chin Sen Ting
language : en
Publisher: World Scientific
Release Date : 1992
Physics Of Hot Electron Transport In Semiconductors written by Chin Sen Ting and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Science categories.
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Hot Electrons In Semiconductors
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Author :
language : en
Publisher:
Release Date : 1978
Hot Electrons In Semiconductors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with categories.
Negative Differential Resistance And Instabilities In 2 D Semiconductors
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Author : N. Balkan
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Negative Differential Resistance And Instabilities In 2 D Semiconductors written by N. Balkan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.