Physics Of Josephson Diodes Formed From 1t Transition Metal Dichalcogenides
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Physics Of Josephson Diodes Formed From 1t Transition Metal Dichalcogenides
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Author : Pranava Keerthi Sivakumar
language : en
Publisher: Springer Nature
Release Date : 2025-03-04
Physics Of Josephson Diodes Formed From 1t Transition Metal Dichalcogenides written by Pranava Keerthi Sivakumar and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-04 with Technology & Engineering categories.
This book provides a clear and lucid introduction to the field of non-reciprocal supercurrent transport in Josephson junctions, particularly the Josephson diode effect in junctions fabricated from mechanically exfoliated transition metal dichalcogenides and its microscopic mechanism. Superconducting materials that display a non-reciprocity in their critical current, namely a supercurrent diode effect (SDE), and Josephson junctions (JJs) that display a Josephson diode effect (JDE) have recently been discovered just a few years ago. These phenomena have attracted much attention for their potential in creating energy-efficient superconducting electronics. The SDE was discovered for the first time only in 2020 and the JDE shortly afterwards. JJs are a critical element of many superconducting devices and, in particular, superconducting qubits that are under intense study for the development of quantum computers. In order to make use of devices that display a JDE, a detailed and comprehensive understanding of the physical origin or origins of this effect is essential, which is the main topic of this dissertation. In addition to the published results, the dissertation contains detailed information on the basic theoretical aspects of superconductivity, Josephson junctions, and the experimental methods that are necessary to achieve these results, which is suitable for undergraduate and graduate students or any reader with knowledge on basic condensed matter physics.
Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1983
Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with Physics categories.
Transition Metal Oxides In Organic Light Emitting Diodes
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Author : Sami Hamwi
language : en
Publisher:
Release Date : 2010
Transition Metal Oxides In Organic Light Emitting Diodes written by Sami Hamwi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Transition metal oxides categories.
Switching In Semiconductor Diodes
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Author : Y. R. Nosov
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Switching In Semiconductor Diodes written by Y. R. Nosov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
It gives me great pleasure to learn that this book, whose ori gin owes much to the work of American scientists and engineers on semiconductor technology, will reach American and other English speaking readers. I am grateful to Plenum Publishing Corporation for arranging the American edition of this book and to Mr. Albin Tybulewicz for his translation, September 5, 1968 Yu. R. Nosov v Preface to the Russian Edition One of the most important applications of semiconductor diodes is their use in electronic pulse circuits. The response of these diodes under switching conditions is governed by the phenomena of accumulation and dispersal of non equlibrium carriers, which are also observed in other p-n junction devices. It was found in the late 1940's that when point-contact ger manium diodes were used in circuits through which short (several tenths of a microsecond) electrical pulses were being passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance of this phenomenon in the efforts to reduce the response time of pulse circuits, many investigations of the phenomenon were carried out and these investigations pro vided the basis of a theory of transient processes in semiconductor diodes.
Switching In Semiconductor Diodes
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Author : I︠U︡riĭ Romanovich Nosov
language : en
Publisher: Springer
Release Date : 1969
Switching In Semiconductor Diodes written by I︠U︡riĭ Romanovich Nosov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1969 with Science categories.
It gives me great pleasure to learn that this book, whose ori gin owes much to the work of American scientists and engineers on semiconductor technology, will reach American and other English speaking readers. I am grateful to Plenum Publishing Corporation for arranging the American edition of this book and to Mr. Albin Tybulewicz for his translation, September 5, 1968 Yu. R. Nosov v Preface to the Russian Edition One of the most important applications of semiconductor diodes is their use in electronic pulse circuits. The response of these diodes under switching conditions is governed by the phenomena of accumulation and dispersal of non equlibrium carriers, which are also observed in other p-n junction devices. It was found in the late 1940's that when point-contact ger manium diodes were used in circuits through which short (several tenths of a microsecond) electrical pulses were being passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance of this phenomenon in the efforts to reduce the response time of pulse circuits, many investigations of the phenomenon were carried out and these investigations pro vided the basis of a theory of transient processes in semiconductor diodes.