Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
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Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
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Author : David J Lockwood
language : en
Publisher: World Scientific
Release Date : 1995-01-20
Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes written by David J Lockwood and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-01-20 with categories.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes
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Author : E M Anastassakis
language : en
Publisher: World Scientific
Release Date : 1990-11-29
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-11-29 with categories.
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
22nd International Conference On The Physics Of Semiconductors
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Author : David J. Lockwood
language : en
Publisher: World Scientific Publishing Company
Release Date : 1995
22nd International Conference On The Physics Of Semiconductors written by David J. Lockwood and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Physics Of Semiconductors The Proceedings Of The Xxi International Conference In 2 Volumes
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Author : Ping Jiang
language : en
Publisher: World Scientific
Release Date : 1993-03-31
Physics Of Semiconductors The Proceedings Of The Xxi International Conference In 2 Volumes written by Ping Jiang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-03-31 with categories.
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Physics Of Semiconductors
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Author :
language : en
Publisher:
Release Date : 1979
Physics Of Semiconductors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with categories.
Physics Of Semiconductors
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Author : Marília Caldas
language : en
Publisher: American Institute of Physics
Release Date : 2010-02-24
Physics Of Semiconductors written by Marília Caldas and has been published by American Institute of Physics this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-02-24 with Technology & Engineering categories.
The conference covered the current and future direction for research in the area of physics of semiconductors, such as growth, sufaces, and interfaces, defects and impurities, wide-band-gap semiconductors, molecular systems, and organic semiconductors, and others.
Nuclear Science Abstracts
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Author :
language : en
Publisher:
Release Date : 1962
Nuclear Science Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962 with Nuclear energy categories.
Physics Of Semiconductors 2002
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Author : J.H Davies
language : en
Publisher: CRC Press
Release Date : 2003-05-01
Physics Of Semiconductors 2002 written by J.H Davies and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-05-01 with Science categories.
The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around the world. Plenary and invited papers (34) have been printed in the paper volume, and all submitted papers (742) are included on the CD-ROM. These proceedings provide an international perspective on the latest research and a review of recent developments in semiconductor physics. Topics range from growth and properties of bulk semiconductors to the optical and transport properties of semiconductor nanostructures. There are 742 papers, mostly arranged in chapters on Bulk, dynamics, defects and impurities, growth (147); Heterostructures, quantum wells, superlattices - optical (138); Heterostructures, quantum wells, superlattices - transport (97); Quantum nanostructures - optical (120); Quantum nanostructures - transport (85); New materials and concepts (52); Novel devices (43); and Spin and magnetic effects (48). A number of trends were identified in setting up the overall programme of the conference. There were significant contributions from new directions of research such as nanostructures and one-dimensional physics; spin effects and ferromagnetism; and terahertz and subband physics. These complemented areas in which the conference has traditional strengths, such as defects and bulk materials; crystal growth; quantum transport; and optical properties. As a record of a conference that covers the whole range of semiconductor physics, this book is an essential reference for researchers working on semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.
Technical Abstract Bulletin
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Author :
language : en
Publisher:
Release Date : 1967
Technical Abstract Bulletin written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Science categories.
Defect And Impurity Engineered Semiconductors And Devices Iii Volume 719
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Author : S. Ashok
language : en
Publisher:
Release Date : 2002-08-09
Defect And Impurity Engineered Semiconductors And Devices Iii Volume 719 written by S. Ashok and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-08-09 with Technology & Engineering categories.
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.