Point Defects In Semiconductors Theoretical Aspects
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Point Defects In Semiconductors Theoretical Aspects
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Author : Michel Lannoo
language : en
Publisher: Springer
Release Date : 1981
Point Defects In Semiconductors Theoretical Aspects written by Michel Lannoo and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Science categories.
Point Defects In Semiconductors I
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Author : M. Lannoo
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Point Defects In Semiconductors I written by M. Lannoo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.
Point Defects In Semiconductors
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Author : Michel Lannoo
language : en
Publisher:
Release Date : 1981
Point Defects In Semiconductors written by Michel Lannoo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with categories.
Point Defects In Semiconductors And Insulators
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Author : Johann-Martin Spaeth
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Point Defects In Semiconductors And Insulators written by Johann-Martin Spaeth and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Point Defects In Semiconductors And Insulators
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Author : Johann-Martin Spaeth
language : en
Publisher: Springer
Release Date : 2012-10-15
Point Defects In Semiconductors And Insulators written by Johann-Martin Spaeth and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-10-15 with Technology & Engineering categories.
The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Point Defects In Group Iv Semiconductors
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Author : S. Pizzini
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017-04-05
Point Defects In Group Iv Semiconductors written by S. Pizzini and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-05 with Technology & Engineering categories.
A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
Theory Of Defects In Solids
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Author : A. M. Stoneham
language : en
Publisher: Oxford University Press
Release Date : 2001
Theory Of Defects In Solids written by A. M. Stoneham and has been published by Oxford University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Science categories.
This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature
Solid State Physics
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Author : J. S. Blakemore
language : en
Publisher: Cambridge University Press
Release Date : 1985-12-12
Solid State Physics written by J. S. Blakemore and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985-12-12 with Science categories.
Updated to reflect recent work in the field, this book emphasizes crystalline solids, going from the crystal lattice to the ideas of reciprocal space and Brillouin zones, and develops these ideas for lattice vibrations, for the theory of metals, and for semiconductors. The theme of lattice periodicity and its varied consequences runs through eighty percent of the book. Other sections deal with major aspects of solid state physics controlled by other phenomena: superconductivity, dielectric and magnetic properties, and magnetic resonance.
Point Defects In Semiconductors Ii
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Author : J. Bourgoin
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Point Defects In Semiconductors Ii written by J. Bourgoin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.
Theory Of Point Defects In Semiconductors
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Author : Guan Seng Khoo
language : en
Publisher:
Release Date : 1987
Theory Of Point Defects In Semiconductors written by Guan Seng Khoo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Point defects categories.
