Process Physics And Modeling In Semiconductor Technology
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Process Physics And Modeling In Semiconductor Technology
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Author : G. R. Srinivasan
language : en
Publisher:
Release Date : 1988
Process Physics And Modeling In Semiconductor Technology written by G. R. Srinivasan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with categories.
Process Physics And Modeling In Semiconductor Technology
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Author :
language : en
Publisher:
Release Date : 1991
Process Physics And Modeling In Semiconductor Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Introduction To Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: World Scientific
Release Date : 1998
Introduction To Semiconductor Device Modelling written by Christopher M. Snowden and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Proceedings Of The Symposium On Process Physics And Modeling In Semiconductor Technology
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Author : G. R. Srinivasan
language : en
Publisher:
Release Date : 1988
Proceedings Of The Symposium On Process Physics And Modeling In Semiconductor Technology written by G. R. Srinivasan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Semiconductors categories.
Process Physics And Modeling In Semiconductor Technology
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Author : Electrochemical Society
language : en
Publisher:
Release Date : 1991
Process Physics And Modeling In Semiconductor Technology written by Electrochemical Society and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Proceedings Of The Fourth International Symposium Of Process Physics And Modeling In Semiconductor Technology
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Author : G. R. Srinivasan
language : en
Publisher: The Electrochemical Society
Release Date : 1996
Proceedings Of The Fourth International Symposium Of Process Physics And Modeling In Semiconductor Technology written by G. R. Srinivasan and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.
The Physics And Modeling Of Mosfets
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Author : Mitiko Miura-Mattausch
language : en
Publisher: World Scientific
Release Date : 2008
The Physics And Modeling Of Mosfets written by Mitiko Miura-Mattausch and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Process Physics And Modeling In Semiconductor Technology
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Author : International Symposium on Process Physics and Model
language : en
Publisher:
Release Date : 1991-01-01
Process Physics And Modeling In Semiconductor Technology written by International Symposium on Process Physics and Model and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-01-01 with categories.
Process Physics And Modeling In Semiconductor Technology
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Author :
language : en
Publisher:
Release Date : 1988
Process Physics And Modeling In Semiconductor Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with categories.
Proceedings Of The Second International Symposium On Process Physics And Modeling In Semiconductor Technology
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Author : G. R. Srinivasan
language : en
Publisher:
Release Date : 1991
Proceedings Of The Second International Symposium On Process Physics And Modeling In Semiconductor Technology written by G. R. Srinivasan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Semiconductors categories.