Properties Of Iii V Quantum Wells And Superlattices

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Properties Of Iii V Quantum Wells And Superlattices

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Author : P. Bhattacharya
language : en
Publisher: Inst of Engineering & Technology
Release Date : 2011-12

Properties Of Iii V Quantum Wells And Superlattices written by P. Bhattacharya and has been published by Inst of Engineering & Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-12 with Technology & Engineering categories.

The characterization and precisely controlled building of atomic-scale mutilayers have been the subject of intensive R&D worldwide. Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all, of which 10,000 have appeared in the last 6 years. The resulting improved materials control is enabling engineers to achieve major improvements in the performance of microelectronic and optoelectronic devices such as QW lasers, tunnelling devices, modulators, switches and photodetectors. In this book, the large volume of research results which have accumulated is evaluated and distilled down to a useful, manageable concentration of up-to-date knowledge for electronic engineers and solid-state physicists. This has been carried out by an invited international team of over 50 specialists under the editorship of Professor Bhattacharya with support from INSPEC, who also compiled the subject index. There are 40 individually-written, self-contained modules ('Datareviews'), each specially commissioned to fit into a pre-determined structure. Subjects reviewed in depth include historical perspective, theory, epitaxial growth and doping, structure (e.g. X-ray diffraction), electronic properties, optical properties, modulation doping and devices. Each Datareview comprises tables, text, figures and expert guidance to the literature, as appropriate. Properties of III-V quantum wells and superlattices is intended both as a look-up source of evaluated data and as a finely-structured state-of-the-art review for academic and industrial R&D workers.

Properties Of Iii V Quantum Wells And Superlattices

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Author : P. K. Bhattacharya
language : en
Publisher: IET
Release Date : 1996

Properties Of Iii V Quantum Wells And Superlattices written by P. K. Bhattacharya and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.

A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Physics And Applications Of Quantum Wells And Superlattices

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Author : E.E. Mendez
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Physics And Applications Of Quantum Wells And Superlattices written by E.E. Mendez and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena

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Author : Kompa, Günter
language : en
Publisher: kassel university press GmbH
Release Date : 2014

Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Compound semiconductors categories.

Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

Optical Properties Of Iii V Semiconductors

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Author : Heinz Kalt
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Optical Properties Of Iii V Semiconductors written by Heinz Kalt and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.

Quantum Wells And Superlattices In Optoelectronic Devices And Integrated Optics

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Author : Alfred R. Adams
language : en
Publisher:
Release Date : 1987

Quantum Wells And Superlattices In Optoelectronic Devices And Integrated Optics written by Alfred R. Adams and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Science categories.

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-25

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-25 with Science categories.

Intersubband Transitions in Quantum Wells: Physics and Device Applications II

Semiconductor Superlattices Growth And Electronic Properties

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Author : Fernando Agullo-rueda
language : en
Publisher: World Scientific
Release Date : 1995-04-17

Semiconductor Superlattices Growth And Electronic Properties written by Fernando Agullo-rueda and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-04-17 with Science categories.

This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.

Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995

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Author : Woo
language : en
Publisher: CRC Press
Release Date : 1996-04-25

Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995 written by Woo and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-04-25 with Technology & Engineering categories.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995

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Author : Institute of Physics Conference
language : en
Publisher: CRC Press
Release Date : 2020-10-28

Compound Semiconductors 1995 Proceedings Of The Twenty Second Int Symposium On Compound Semiconductors Held In Cheju Island Korea 28 August 2 September 1995 written by Institute of Physics Conference and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10-28 with Science categories.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.