Properties Processing And Applications Of Gallium Nitride And Related Semiconductors
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Properties Processing And Applications Of Gallium Nitride And Related Semiconductors
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Author : James H. Edgar
language : en
Publisher: Institution of Electrical Engineers
Release Date : 1999
Properties Processing And Applications Of Gallium Nitride And Related Semiconductors written by James H. Edgar and has been published by Institution of Electrical Engineers this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Technology & Engineering categories.
Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Gallium Nitride Electronics
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Author : Rüdiger Quay
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-05
Gallium Nitride Electronics written by Rüdiger Quay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-05 with Technology & Engineering categories.
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Gallium Nitride Processing For Electronics Sensors And Spintronics
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Author : Stephen J. Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-07-06
Gallium Nitride Processing For Electronics Sensors And Spintronics written by Stephen J. Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-06 with Technology & Engineering categories.
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Gallium Nitride Power Devices
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Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06
Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Gan And Related Materials
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Author : Stephen J. Pearton
language : en
Publisher: CRC Press
Release Date : 2021-10-08
Gan And Related Materials written by Stephen J. Pearton and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-08 with Science categories.
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Iii V Nitride Semiconductors
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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2002-09-06
Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-09-06 with Technology & Engineering categories.
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Porous Silicon Carbide And Gallium Nitride
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Author : Randall M. Feenstra
language : en
Publisher: John Wiley & Sons
Release Date : 2008-04-15
Porous Silicon Carbide And Gallium Nitride written by Randall M. Feenstra and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-15 with Technology & Engineering categories.
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Handbook Of Gan Semiconductor Materials And Devices
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Author : Wengang (Wayne) Bi
language : en
Publisher: CRC Press
Release Date : 2017-10-20
Handbook Of Gan Semiconductor Materials And Devices written by Wengang (Wayne) Bi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-20 with Science categories.
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Optoelectronic Devices
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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004
Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.