Radiation Effects In Advanced Semiconductor Materials And Devices
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Radiation Effects In Advanced Semiconductor Materials And Devices
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Author : C. Claeys
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Radiation Effects In Advanced Semiconductor Materials And Devices written by C. Claeys and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
Radiation Effects In Advanced Semiconductor Materials And Devices
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Author : Frank Larin
language : en
Publisher:
Release Date : 1968
Radiation Effects In Advanced Semiconductor Materials And Devices written by Frank Larin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1968 with categories.
Reliability And Radiation Effects In Compound Semiconductors
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Author : Allan H Johnston
language : en
Publisher: World Scientific
Release Date : 2010-04-27
Reliability And Radiation Effects In Compound Semiconductors written by Allan H Johnston and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-27 with Technology & Engineering categories.
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Radiation Effects In Semiconductors
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Author : Krzysztof Iniewski
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Radiation Effects In Semiconductors written by Krzysztof Iniewski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Extreme Environment Electronics
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Extreme Environment Electronics written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Microelectronics Technology And Devices Sbmicro 2010
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Author : Marcelo Antonio Pavanello
language : en
Publisher: The Electrochemical Society
Release Date : 2010-09
Microelectronics Technology And Devices Sbmicro 2010 written by Marcelo Antonio Pavanello and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-09 with Science categories.
Held in Sao Paulo, Brazil, from September 6 - September 9, 2010, the mission of the 25th Symposium on Microelectronics Technology and Devices ¿ SBMicro2010 was to share ideas and to point to new directions for future research and development. SBMicro offers researchers and practitioners a unique opportunity to share their perspectives with those interested in the various aspects of microelectronics. This issue of ECS Transactions continues the SBMicro tradition of being a premier forum for the presentation of leading edge research on process, devices, sensors and integrated circuit technology.
Radiation Effects In Silicon Carbide
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Author : A.A. Lebedev
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017
Radiation Effects In Silicon Carbide written by A.A. Lebedev and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Technology & Engineering categories.
The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
X Ray And Related Techniques
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Author : Zainal Arifin Ahmad
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2010-12-06
X Ray And Related Techniques written by Zainal Arifin Ahmad and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-12-06 with Technology & Engineering categories.
Selected, peer reviewed papers of the International Conference on X-ray and Related Techniques in Research and Industry (IXCRI 2010) held at Langkawi Island, Malaysia from 9th to 10th of June 2010
Organic Semiconductors In Sensor Applications
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Author : Daniel A. Bernards
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-02-22
Organic Semiconductors In Sensor Applications written by Daniel A. Bernards and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-02-22 with Science categories.
Organic semiconductors offer unique characteristics which have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this emerging field by discussing both optically- and electrically-based sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques are also outlined.
Differentiated Layout Styles For Mosfets
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Author : Salvador Pinillos Gimenez
language : en
Publisher: Springer Nature
Release Date : 2023-05-05
Differentiated Layout Styles For Mosfets written by Salvador Pinillos Gimenez and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-05-05 with Technology & Engineering categories.
This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.