Radiation Tolerant Gallium Nitride Electronics
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Radiation Tolerant Gallium Nitride Electronics
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Author : Adithya Balaji
language : en
Publisher:
Release Date : 2022
Radiation Tolerant Gallium Nitride Electronics written by Adithya Balaji and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with Electrical engineering categories.
Gallium Nitride (GaN) devices are gaining widespread adoption in high performance power and RF applications. Recently, GaN has gained a lot of attention for its high tolerance to extreme environments. Due to its high displacement energy and bond strength, GaN has high intrinsic radiation tolerance. This work presents a radiation tolerant GaN monolithic technology to integrate digital circuits using AlGaN/GaN depletion mode and Gate Injection Transistor (GIT) based enhancement mode HEMTs. Using depletion load logic, logic inverters and universal gates were implemented and fabricated. The type of radiation damage on GaN is dependent on the type of radiation and dose. This digital logic technology proved feasible in low dose gamma radiation environments with no significant degradation in electrical performance. AlGaN/GaN HEMTs have shown high degradation after suffering displacement damage. This work proposes highly scaled FinFET structures to architect these devices to be less susceptible to radiation induced buffer damage. TCAD simulations of fin structures showed little shift in 2DEG concentration compared to similar planar structures. An E-Beam lithography process was also developed to fabricate AlGaN/GaN FinFETs.
Gallium Nitride Processing For Electronics Sensors And Spintronics
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Author : Stephen J. Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-07-06
Gallium Nitride Processing For Electronics Sensors And Spintronics written by Stephen J. Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-06 with Technology & Engineering categories.
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
A High Temperature Tolerant And Radiation Resistant In Core Neutron Sensor For Advanced Reactors
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Author :
language : en
Publisher:
Release Date : 2015
A High Temperature Tolerant And Radiation Resistant In Core Neutron Sensor For Advanced Reactors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-‐situ study of electronic properties of GaN device such as I-‐V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-‐core irradiation of GaN up to the highest yet fast neutron fluence and an off-‐line performance evaluation.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-15
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-15 with Science categories.
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Wide Bandgap Semiconductor Electronics
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Author : Jun Suda
language : en
Publisher:
Release Date : 1998
Wide Bandgap Semiconductor Electronics written by Jun Suda and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the most promising materials to realize high-power, high-frequency, high-temperature and radiation-resistant electronic devices. In this paper, we present recent progress of our SiC and GaN research activities, high-quality epitaxial growth of SiC by using step-controlled epitaxy in chemical capor deposition, its application to SiC power-electronic devices and polytype control of GaN crystal by using metalorganic molecular beam epitaxy. [Authors' abstract].
Proton Radiation And Thermal Stabilty Sic Of Gallium Nitride And Gallium Nitride Devices
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Author : Kimberly K. Allums
language : en
Publisher:
Release Date : 2006
Proton Radiation And Thermal Stabilty Sic Of Gallium Nitride And Gallium Nitride Devices written by Kimberly K. Allums and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
ABSTRACT: In today's industry one can see a constant challenge to exceed the limits of yesterday's devices. For the last three decades, the III--V nitride semiconductors have been viewed as highly promising for semiconductor device applications. The primary focus of III--V nitrides, thus far, has been centered on light emitting diodes (LEDs), injection lasers for digital data reading and storage applications, and ultra violet photodetectors. Yet, another application is high-power electronic devices for space-borne communications systems. It is expected that GaN-based devices will be more resistant to radiation damage often encountered in space environments, though verification of this is just now being undertaken. In particular, no information is yet available about the sensitivity to radiation of devices using dielectrics such as MOSFETs. Similarly, very limited data has been reported on the effects of high-energy protons on GaN based devices of any type. For this reason the research presented in this dissertation was undertaken to study the radiation and thermal stability of gallium nitride materials and gallium nitride semiconductor diodes, with and without novel gate dielectrics such as, scandium oxide (Sc2O3) and magnesium oxide (MgO) and the ternary mix of magnesium calcium oxide (MgCaO). It was found that though environmental degradation could be a problem for MgO dielectrics, the radiation exposure itself did not produce significant damage in either the Sc2O3, MgO or MgCaO dielectrics. Much of the minimal damage occurred in the GaN as shown by photoluminescence spectroscopy (PL).
Optoelectronic Devices
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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004
Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
A High Temperature Tolerant And Radiation Resistant In Core Neutron Sensor For Advanced Reactors Final Report
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Author :
language : en
Publisher:
Release Date : 2015
A High Temperature Tolerant And Radiation Resistant In Core Neutron Sensor For Advanced Reactors Final Report written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-08-12
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-12 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.