Resonant Tunneling In Polar Iii Nitride Heterostructures
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Resonant Tunneling In Polar Iii Nitride Heterostructures
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Author : Jimy Joe Encomendero Risco
language : en
Publisher:
Release Date : 2020
Resonant Tunneling In Polar Iii Nitride Heterostructures written by Jimy Joe Encomendero Risco and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
The outstanding material properties of III-nitride semiconductors has prompted an intense research activity focused on the engineering of resonant tunneling transport within this revolutionary family of wide-bandgap semiconductors. From resonant tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), nitride devices hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. Although considerable research effort has been devoted over the past two decades, nitride-based resonant tunneling transport has been demonstrated only during the last four years. In this work, I present the various aspects of heterostructure design, epitaxial growth and device fabrication techniques, which have led to the first unequivocal demonstration of robust resonant tunneling transport and reliable room temperature negative differential conductance in III-Nitride heterostructures. This thesis constitutes a comprehensive work spanning all fronts of experimental, theoretical, and computational research focused on the fundamental physics and engineering of resonant tunneling transport in polar III-nitride semiconductors. Our combined experimental and theoretical approach, allowed us to shed light into the physics of electronic quantum interference phenomena in polar semiconductors which had remained hidden until now, resulting in the discovery of new tunneling features, unique in polar RTDs. The robustness of our experimental data enabled us to track these unique features to the broken inversion symmetry, which generates the built-in spontaneous and piezoelectric polarization fields. After identifying the intimate connection between the polarization fields and the resonant tunneling current, we harness this relationship to develop a completely new approach to measure the magnitude of the internal polarization fields via electron resonant tunneling transport. To get further insight into the asymmetric tunneling injection originated by the polar active region, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current which includes contributions from coherent and sequential tunneling processes is presented. After the application of this new theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities. This agreement allows us to elucidate the role played by the internal polarization fields on the amplitude of the electronic transmission and broadening of the resonant tunneling line shape. Our analytical model is then employed for the design of high-current density GaN/AlN RTDs which are harnessed as the gain elements of the first microwave oscillators and harmonic multipliers driven by III-nitride RTDs. The findings presented here pave the way for the realization of III-Nitride-based high-speed oscillators and quantum cascade lasers that operate at wavelengths that, until now, remain unreachable by other semiconductor materials.
High Frequency Gan Electronic Devices
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Author : Patrick Fay
language : en
Publisher: Springer
Release Date : 2019-08-01
High Frequency Gan Electronic Devices written by Patrick Fay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-01 with Technology & Engineering categories.
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Iii Nitride Semiconductors And Their Modern Devices
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Author : Bernard Gil
language : en
Publisher: Semiconductor Science and Tech
Release Date : 2013-08-22
Iii Nitride Semiconductors And Their Modern Devices written by Bernard Gil and has been published by Semiconductor Science and Tech this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-22 with Science categories.
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Iii Nitride Materials Devices And Nano Structures
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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 2017-04-20
Iii Nitride Materials Devices And Nano Structures written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-20 with Science categories.
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Resonant Tunneling In Double Barrier Heterostructures
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Author : Caton Philip Little
language : en
Publisher:
Release Date : 1997
Resonant Tunneling In Double Barrier Heterostructures written by Caton Philip Little and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Heterostructures categories.
Quantum Dots
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Author : Ameenah Al-Ahmadi
language : en
Publisher: BoD – Books on Demand
Release Date : 2012-04-04
Quantum Dots written by Ameenah Al-Ahmadi and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-04-04 with Science categories.
The book “Quantum dots: A variety of a new applications” provides some collections of practical applications of quantum dots. This book is divided into four sections. In section 1 a review of the thermo-optical characterization of CdSe/ZnS core-shell nanocrystal solutions was performed. The Thermal Lens (TL) technique was used, and the thermal self-phase Modulation (TSPM) technique was adopted as the simplest alternative method. Section 2 includes five chapters where novel optical and lasing application are discussed. In section 3 four examples of quantum dot system for different applications in electronics are given. Section 4 provides three examples of using quantum dot system for biological applications. This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Biology, Material Science, Medicine with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.
Physics Of Semiconductor Devices
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Author : V. K. Jain
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Physics Of Semiconductor Devices written by V. K. Jain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Science categories.
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
State Of The Art Program On Compound Semiconductors Xli And Nitride And Wide Bandgap Semiconductors For Sensors Photonics And Electronics V
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Author : H. M. Ng
language : en
Publisher: The Electrochemical Society
Release Date : 2004
State Of The Art Program On Compound Semiconductors Xli And Nitride And Wide Bandgap Semiconductors For Sensors Photonics And Electronics V written by H. M. Ng and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Comprehensive Semiconductor Science And Technology
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Author :
language : en
Publisher: Newnes
Release Date : 2011-01-28
Comprehensive Semiconductor Science And Technology written by and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-28 with Science categories.
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts