Review And Characterization Of Gallium Nitride Power Devices
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Review And Characterization Of Gallium Nitride Power Devices
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Author : Edward Andrew Jones
language : en
Publisher:
Release Date : 2016
Review And Characterization Of Gallium Nitride Power Devices written by Edward Andrew Jones and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Gallium Nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This thesis reviews the characteristics and commercial status of both vertical and lateral GaN power devices from the user perspective, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic on-resistance, breakdown mechanisms, thermal design, device availability, and reliability qualification. Static and dynamic characterization was then performed across the full current, voltage, and temperature range of this device to enable effective GaN-based converter design. Static testing was performed with a curve tracer and precision impedance analyzer. A double pulse test setup was constructed and used to measure switching loss and time at the fastest achievable switching speed, and the subsequent overvoltages due to the fast switching were characterized. The results were also analyzed to characterize the effects of cross-talk in the active and synchronous devices of a phase-leg topology with enhancement-mode GaN HFETs. Based on these results and analysis, an accurate loss model was developed for the device under test. Based on analysis of these characterization results, a simplified model was developed to describe the overall switching behavior and some unique features of the device. The consequences of the Miller effect during the turn-on transient were studied to show that no Miller plateau occurs, but rather a decreased gate voltage slope, followed by a sharp drop. The significance of this distinction is derived and explained. GaN performance at elevated temperature was also studied, because turn-on time increases significantly with temperature, and turn-on losses increase as a result. Based on this relationship, a temperature-dependent turn-on model and a linear scaling factor was proposed for estimating turn-on loss in e-mode GaN HFETs.
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Gallium Nitride Power Devices
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Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06
Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Characterization Of Wide Bandgap Power Semiconductor Devices
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Author : Fei (Fred) Wang
language : en
Publisher:
Release Date : 2018
Characterization Of Wide Bandgap Power Semiconductor Devices written by Fei (Fred) Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with TECHNOLOGY & ENGINEERING categories.
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
Thermal Management Of Gallium Nitride Electronics
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Author : Marko Tadjer
language : en
Publisher: Woodhead Publishing
Release Date : 2022-07-13
Thermal Management Of Gallium Nitride Electronics written by Marko Tadjer and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-07-13 with Technology & Engineering categories.
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Gallium Nitride And Silicon Carbide Power Devices
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Author : B Jayant Baliga
language : en
Publisher: World Scientific Publishing Company
Release Date : 2016-12-12
Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-12 with categories.
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy
Normally Off Gan Power Devices
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Author : Hanxing Wang
language : en
Publisher:
Release Date : 2016
Normally Off Gan Power Devices written by Hanxing Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with Gallium nitride categories.
Characterization Of Defects And Deep Levels For Gan Power Devices
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Author : Tetsuo Narita
language : en
Publisher:
Release Date : 2020
Characterization Of Defects And Deep Levels For Gan Power Devices written by Tetsuo Narita and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with Electronic books categories.
This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy. The identifi cations of their deep levels and extended defect structures are presented by comparing with reported fi rst-principles calculations. It reviews emerging technologies for defect characterizations using atom probe tomography, synchrotron x-ray diffraction topography in wafer scale, and multiphoton-excitation photoluminescence, which allows for the multidirectional characterization of structural defects.
Wide Bandgap Semiconductors For Power Electronics
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Author : Peter Wellmann
language : en
Publisher: John Wiley & Sons
Release Date : 2022-01-10
Wide Bandgap Semiconductors For Power Electronics written by Peter Wellmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-10 with Technology & Engineering categories.
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.