Semiconductor Modeling
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Semiconductor Modeling Techniques
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Author : Xavier Marie
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-06-26
Semiconductor Modeling Techniques written by Xavier Marie and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-06-26 with Technology & Engineering categories.
This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
Introduction To Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: World Scientific
Release Date : 1998
Introduction To Semiconductor Device Modelling written by Christopher M. Snowden and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Semiconductor Modeling
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Author : Roy Leventhal
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-01-10
Semiconductor Modeling written by Roy Leventhal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-01-10 with Technology & Engineering categories.
Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers
Semiconductor Device Modeling With Spice
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Author : Giuseppe Massabrio
language : en
Publisher: McGraw Hill Professional
Release Date : 1998-12-22
Semiconductor Device Modeling With Spice written by Giuseppe Massabrio and has been published by McGraw Hill Professional this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-12-22 with Technology & Engineering categories.
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Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Analysis And Simulation Of Semiconductor Devices
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Author : S. Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Semiconductor Devices written by S. Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Semiconductor Devices
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Author : NANDITA DASGUPTA
language : en
Publisher: PHI Learning Pvt. Ltd.
Release Date : 2004-01-01
Semiconductor Devices written by NANDITA DASGUPTA and has been published by PHI Learning Pvt. Ltd. this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-01-01 with Technology & Engineering categories.
Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.
Noise In Semiconductor Devices
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Author : Fabrizio Bonani
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
Noise In Semiconductor Devices written by Fabrizio Bonani and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.
Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Semiconductor Device Modeling With Spice
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Author : Giuseppe Massobrio
language : en
Publisher:
Release Date : 1993
Semiconductor Device Modeling With Spice written by Giuseppe Massobrio and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with SPICE (Computer file) categories.
Transient Electro Thermal Modeling On Power Semiconductor Devices
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Author : Tanya Kirilova Gachovska
language : en
Publisher: Springer Nature
Release Date : 2022-06-01
Transient Electro Thermal Modeling On Power Semiconductor Devices written by Tanya Kirilova Gachovska and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
