Short Channel Gan Fet Mmic Technology For High Reliability Applications Band 74
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Short Channel Gan Fet Mmic Technology For High Reliability Applications Band 74
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Author : Konstantin Osipov
language : en
Publisher: Cuvillier Verlag
Release Date : 2024-02-07
Short Channel Gan Fet Mmic Technology For High Reliability Applications Band 74 written by Konstantin Osipov and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-02-07 with categories.
Nowdays GaN HEMT technology reached maturity level that allows industral fabrication of such devices for wide range of civil (telecommunications, power electrinics, automotive etc.), as well as space and military (phased array radars) applications. At this level, technology start reaching physical limits of GaN material and require new approaches that will allow to overcome some of well known problems related to GaN HEMTs, such as high gate leakage currents, reliability issues and difficulties of normally-off transistor fabrication. The goal of these theses is theoretical and experimental confirmation of the idea, that using peizoelectric nature of GaN crystal will allow local modification of GaN HEMT channel by means of external mechanical stress (using first and second passivation layers as stressors). After implementation of the proposed technology changes and new device geometry in process flow intended for 150 nm GaN HEMTMMIC fabrication, E/D devices with pinch-off voltages +0.1V and -1.65V respectively were fabricated on the same wafer within single process flow. It was observed, that E-mode devices, fabricated using compressed passivation layers, demonstrate lower gate leakage currents and more robust in HTRB test as compared to D-mode devices. In summary, it was demonstrated, that it is possible to control pinch-off voltage and gate leakage current of short channel GaN HEMTs by application of external stress. Usage of external stress, opens new degree of freedom in device optimization, and extends opportunities for more advanced MMIC design.
Untersuchung Der Degradation Von Inalgan Basierten Ultravioletten Leuchtdioden Zur Verbesserung Der Zuverl Ssigkeit Band 79
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Author : Johannes Glaab
language : de
Publisher: Cuvillier Verlag
Release Date : 2025-06-20
Untersuchung Der Degradation Von Inalgan Basierten Ultravioletten Leuchtdioden Zur Verbesserung Der Zuverl Ssigkeit Band 79 written by Johannes Glaab and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-06-20 with categories.
Diese Arbeit untersucht das betriebsinduzierte Degradationsverhalten von InAlGaN-basierten UV-C und UV-B LEDs. Durch Analyse des zeitlichen Verlaufs von elektroopti-schen Parametern, wie beispielsweise optische Leistung und Betriebsspannung, sowie Materialanalytischen Messungen konnten drei Degradationsmechanismen identifiziert werden, welche zu einer Reduktion der optischen Leistung der LEDs führen: Die Aktivie-rung von Magnesium-Wasserstoff-Komplexen, die Bildung von Punktdefekten in der akti-ven Zone, sowie die Diffusion von Punktdefekten in die aktive Zone. Optimierungen der Heterostruktur, des p-Dotierprofil und der Elektronenblockierschicht verbesserten die Lochinjektion und strahlende Rekombination, wodurch die initiale Leistung erhöht und die Lebensdauer der LEDs deutlich gesteigert werden konnte.
Microwave Circuit Design Using Linear And Nonlinear Techniques
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Author : George D. Vendelin
language : en
Publisher: John Wiley & Sons
Release Date : 2005-10-03
Microwave Circuit Design Using Linear And Nonlinear Techniques written by George D. Vendelin and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-10-03 with Technology & Engineering categories.
The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Short Channel Gan Fet Mmic Technology For High Reliability Applications
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Author : Konstantin Osipov
language : en
Publisher:
Release Date : 2024
Short Channel Gan Fet Mmic Technology For High Reliability Applications written by Konstantin Osipov and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024 with categories.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-09-30
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-09-30 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Load Pull Techniques With Applications To Power Amplifier Design
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Author : Fadhel M. Ghannouchi
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-06-06
Load Pull Techniques With Applications To Power Amplifier Design written by Fadhel M. Ghannouchi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-06-06 with Science categories.
This first book on load-pull systems is intended for readers with a broad knowledge of high frequency transistor device characterization, nonlinear and linear microwave measurements, RF power amplifiers and transmitters. Load-Pull Techniques with Applications to Power Amplifier Design fulfills the demands of users, designers, and researchers both from industry and academia who have felt the need of a book on this topic. It presents a comprehensive reference spanning different load-pull measurement systems, waveform measurement and engineering systems, and associated calibration procedures for accurate large signal characterization. Besides, this book also provides in-depth practical considerations required in the realization and usage of load-pull and waveform engineering systems. In addition, it also provides procedure to design application specific load-pull setup and includes several case studies where the user can customize architecture of load-pull setups to meet any specific measurement requirements. Furthermore, the materials covered in this book can be part of a full semester graduate course on microwave device characterization and power amplifier design.
Properties Of Advanced Semiconductor Materials
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Author : Michael E. Levinshtein
language : en
Publisher: John Wiley & Sons
Release Date : 2001-02-21
Properties Of Advanced Semiconductor Materials written by Michael E. Levinshtein and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-02-21 with Technology & Engineering categories.
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
Advanced Silicon Carbide Devices And Processing
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Author : Stephen Saddow
language : en
Publisher: BoD – Books on Demand
Release Date : 2015-09-17
Advanced Silicon Carbide Devices And Processing written by Stephen Saddow and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-09-17 with Technology & Engineering categories.
Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.