Si Silicon
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Si Silicon
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Author :
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Si Silicon written by and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
This volume concludes the coverage of silicon carbide, SiC, begun in "Silicon" Supplement Volume B 2, 1984, subtitled "Silicon Carbide - Part I". Part I described the physical properties of SiC, SiC diodes, molecular species in the SiC-C gas phase, and amorphous silicon-carbon alloys. The current Part II ("Silicon" Supplement Volume B 3,1986) covers in its initial chapter the Si-C phase diagram and in the final chapters the higher order systems of Si and C with additional elements through boron, arranged according to the Gmelin system. In between some 95% of the volume focusses on SiC, beginning with its natural occurrence, preparation and formation, and purification, continuing with its chemical analysis, manufacture of special ized forms, electrochemistry, and chemical reactions, and concluding with descriptions of its myriad applications. The final applications section covering electronic devices also describes similar applications of the amorphous Si-C alloys. The successive chapters in this volume are often closely interrelated, since it is often necessary to synthesize SiC directly in a form in which it will be applied. SiC cannot be melted and cast, nor rolled nor drawn, nor is it easily electroplated or sintered or purified. Silicon carbide first became known to man when E. G. Acheson in 1891 used an electric current to heat a mixture of clay and carbon to extremely high temperatures.
Si Silicon
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Author :
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Si Silicon written by and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
This is the first supplementary volume on silicon-nitrogen compounds. It begins with the system silicon-nitrogen and continues with the binary silicon nitrides, except for Si3N4 that will be the subject of a separate Handbook volume. A chapter describes anionic formula units of the type SixNr and includes a condensed description of a series of ternary silicon nitrides. A treatment follows of the molecular and polymeric silicon-nitrogen-hydrogen compounds in which hydrogen is bonded either to silicon, or to nitrogen, or to both. In other words, those compounds have been selected for this chapter in which one or more nitrogen atoms are bonded to silicon and also those compounds in which additional silicon and/or hydrogen have been bonded to the initial silicon. About 60% of this volume contains a description of predominantly molecular silicon nitrogen compounds that are substituted at the nitrogen with groups containing other elements. According to the Gmelin System the substituting groups may be bonded through sulfur, boron, carbon, or both sulfur and carbon, or both boron and carbon. As may be expected, the largest quantity of information exists for compounds that have organyl substi tuents on the nitrogen, including the class of silicon coordination compounds that fulfill the criteria. In particular in these chapters, sections and subsections have been formed grouping compounds of the same class together. Compounds containing silicon--carbon bonds any where in the molecule are not covered in this volume. General remarks have been given to introduce chapters and to link chapters and sections.
Si Silicon
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Author : Eberhard F. Krimmel
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Si Silicon written by Eberhard F. Krimmel and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Si Silicon
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Author :
language : en
Publisher: Springer
Release Date : 1985-12-01
Si Silicon written by and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985-12-01 with Science categories.
This volume concludes the coverage of silicon carbide, SiC, begun in "Silicon" Supplement Volume B 2, 1984, subtitled "Silicon Carbide - Part I". Part I described the physical properties of SiC, SiC diodes, molecular species in the SiC-C gas phase, and amorphous silicon-carbon alloys. The current Part II ("Silicon" Supplement Volume B 3,1986) covers in its initial chapter the Si-C phase diagram and in the final chapters the higher order systems of Si and C with additional elements through boron, arranged according to the Gmelin system. In between some 95% of the volume focusses on SiC, beginning with its natural occurrence, preparation and formation, and purification, continuing with its chemical analysis, manufacture of special ized forms, electrochemistry, and chemical reactions, and concluding with descriptions of its myriad applications. The final applications section covering electronic devices also describes similar applications of the amorphous Si-C alloys. The successive chapters in this volume are often closely interrelated, since it is often necessary to synthesize SiC directly in a form in which it will be applied. SiC cannot be melted and cast, nor rolled nor drawn, nor is it easily electroplated or sintered or purified. Silicon carbide first became known to man when E. G. Acheson in 1891 used an electric current to heat a mixture of clay and carbon to extremely high temperatures.
Si Silicon
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Author :
language : en
Publisher:
Release Date : 1991
Si Silicon written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Si Silicon
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Author :
language : en
Publisher: Springer
Release Date : 2014-03-12
Si Silicon written by and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-12 with Science categories.
This is the first supplementary volume on silicon-nitrogen compounds. It begins with the system silicon-nitrogen and continues with the binary silicon nitrides, except for Si3N4 that will be the subject of a separate Handbook volume. A chapter describes anionic formula units of the type SixNr and includes a condensed description of a series of ternary silicon nitrides. A treatment follows of the molecular and polymeric silicon-nitrogen-hydrogen compounds in which hydrogen is bonded either to silicon, or to nitrogen, or to both. In other words, those compounds have been selected for this chapter in which one or more nitrogen atoms are bonded to silicon and also those compounds in which additional silicon and/or hydrogen have been bonded to the initial silicon. About 60% of this volume contains a description of predominantly molecular silicon nitrogen compounds that are substituted at the nitrogen with groups containing other elements. According to the Gmelin System the substituting groups may be bonded through sulfur, boron, carbon, or both sulfur and carbon, or both boron and carbon. As may be expected, the largest quantity of information exists for compounds that have organyl substi tuents on the nitrogen, including the class of silicon coordination compounds that fulfill the criteria. In particular in these chapters, sections and subsections have been formed grouping compounds of the same class together. Compounds containing silicon--carbon bonds any where in the molecule are not covered in this volume. General remarks have been given to introduce chapters and to link chapters and sections.
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Fundamental Aspects Of Silicon Oxidation
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Author : Yves J. Chabal
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamental Aspects Of Silicon Oxidation written by Yves J. Chabal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Si Silicon
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Author : Eberhard F. Krimmel
language : en
Publisher: Springer
Release Date : 1991-09-05
Si Silicon written by Eberhard F. Krimmel and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-09-05 with Technology & Engineering categories.
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Thin Film Transistors Polycrystalline Silicon Thin Film Transistors
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Author : Yue Kuo
language : en
Publisher: Springer Science & Business Media
Release Date : 2004
Thin Film Transistors Polycrystalline Silicon Thin Film Transistors written by Yue Kuo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Thin film transistors categories.
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.