Silicon Carbide As The Nonvolatile Dynamic Memory Material
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Silicon Carbide As The Nonvolatile Dynamic Memory Material
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Author : Kuan Yew Cheong
language : en
Publisher:
Release Date : 2004
Silicon Carbide As The Nonvolatile Dynamic Memory Material written by Kuan Yew Cheong and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Capacitors categories.
Abstract: This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]-[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal-oxide-semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]-[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity problems. Using a combination of nitridation and oxidation processes, a sandwich technique (nitridation-oxidation-nitridation) has been proposed and verified to solve the lengthy and expensive oxide-growing process in direct nitric oxide (NO) gas [1]. The nitrogen source from the toxic-NO gas has been replaced by using a nontoxic nitrous oxide (N2O) gas. The best combination of process parameters in this gas is oxide-growing temperature at 1300oC with 10% N2O [2], [3]. The quality of nitrided gate oxides obtained by this technique is lower than the sandwich technique [6], [13]. Using 4H SiC-based MOS with nitrided gate oxides grown by either of the abovementioned nitridation techniques, the fundamentals of electron-hole generation have been investigated using high-temperature capacitance-transient measurements. The contributions of carrier generation, occurring at room temperature, in the bulk and at the SiC-SiO2 interface are evaluated and compared using a newly developed method [8], [9]. The effective bulk-generation rates are approximately equal for both types of nitrided oxides, whereas the effective surface-generation rates have been shown to exhibit very strong dependencies on the methods of producing the nitrided gate oxide. Based on analysis, the prevailing generation component in a SiC-based MOS capacitor with nitrided gate oxide is at SiC-SiO2 interface located below the gate. Utilizing the understanding of electron-hole generation in SiC, the nonvolatile characteristics of memory device fabricated on SiC have been explored. The potential of developing a SiC-based one-transistor one-capacitor (1T/1C) nonvolatile-dynamic memory (NDM) has been analyzed using SiC-based MOS capacitors as storage elements or test structures. Three possible leakage mechanisms have been evaluated [10]-[16]: (1) leakage via MOS capacitor dielectric, (2) leakage due to electron-hole generation in a depleted MOS capacitor, and (3) junction leakage due to generation current occurred at a reverse-biased pn junction surrounding the drain region of a select metal-oxide-semiconductor field-effect-transistor (MOSFET). Among them, leakage through capacitor oxide remains an important factor that could affect the nonvolatile property in the proposed device, whereas others leakage mechanisms are insignificant. Based on the overall results, the potential of developing a SiC-based 1T/1C NDM is encouraging.
Silicon Carbide Nonvolatile Memory For Harsh Environments
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Author : Ce Li
language : en
Publisher:
Release Date : 2003
Silicon Carbide Nonvolatile Memory For Harsh Environments written by Ce Li and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Sic Materials And Devices
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-07-02
Sic Materials And Devices written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-07-02 with Technology & Engineering categories.
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-23
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-23 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Silicon Carbide And Related Materials
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Author :
language : en
Publisher:
Release Date : 1996
Silicon Carbide And Related Materials written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Crystal growth categories.
Advanced Materials Source Book
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Author : Jon Binner
language : en
Publisher: Elsevier
Release Date : 2013-10-22
Advanced Materials Source Book written by Jon Binner and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-22 with Technology & Engineering categories.
Advanced Materials Source Book 1994-1995 presents the developments in the field of advanced materials. This book provides information regarding materials and products, legislation, patents, advances in processing and equipment, standards, and testing procedures. Organized into four chapters, this book begins with an overview of the international market trends, specific materials, or materials groups and appliances. This text then examines the applications and makes market projections on a wide range of specialty materials, including ceramics, biomaterials, electronic materials, and optical materials. Other chapters consider the healthy nature of predictions concerning Japan and parts of Europe, stating that Germany and Japan will lead the advanced structural ceramics market. This book discusses as well the developments concerning various materials. The final chapter presents a list of contact details for the organizations listed in the main text to allow the readers to make new contacts or to follow-up items of particular interest. This book is a valuable resource for private consumers.
Signals
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Author :
language : en
Publisher:
Release Date : 1992
Signals written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Armed Forces categories.
Advances In Astronautical Sciences
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Author :
language : en
Publisher: Univelt
Release Date : 1992
Advances In Astronautical Sciences written by and has been published by Univelt this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Technology & Engineering categories.
Vols. 1-3 are reissues of the proceedings of the 3d-4th annual meetings and 1st western regional meeting of the American Astronautical Society.
Semiconductors And Semimetals
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Author : Robert K. Willardson
language : en
Publisher:
Release Date : 1998
Semiconductors And Semimetals written by Robert K. Willardson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.
Dielectrics For Nanosystems 7 Materials Science Processing Reliability And Manufacturing
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Author : D. Misra
language : en
Publisher: The Electrochemical Society
Release Date :
Dielectrics For Nanosystems 7 Materials Science Processing Reliability And Manufacturing written by D. Misra and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
