Fundamentals Of Silicon Carbide Technology
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Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-23
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-23 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Fundamentals Of Power Semiconductor Devices
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Author : B. Jayant Baliga
language : en
Publisher: Springer
Release Date : 2018-09-28
Fundamentals Of Power Semiconductor Devices written by B. Jayant Baliga and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-28 with Technology & Engineering categories.
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Sic Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2007
Sic Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Silicon Carbide Power Devices
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Author : B Jayant Baliga
language : en
Publisher: World Scientific
Release Date : 2006-01-05
Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-05 with Technology & Engineering categories.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Physics And Technology Of Silicon Carbide Devices
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Author : George Gibbs
language : en
Publisher:
Release Date : 2016-10-01
Physics And Technology Of Silicon Carbide Devices written by George Gibbs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-01 with categories.
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Fundamentals Of Power Semiconductor Devices
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Author : B. Jayant Baliga
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-04-02
Fundamentals Of Power Semiconductor Devices written by B. Jayant Baliga and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-02 with Technology & Engineering categories.
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Sic Technology
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Author : Maurizio Di Paolo Emilio
language : en
Publisher: Springer Nature
Release Date : 2024-08-13
Sic Technology written by Maurizio Di Paolo Emilio and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-08-13 with Technology & Engineering categories.
This essential book offers comprehensive coverage of Silicon Carbide (SiC) technology, including materials, manufacturing processes, device development, and design approaches. Authored by leading experts, it provides authoritative insights for engineers, researchers, and enthusiasts. Understanding SiC's future impact on technology is crucial, making this publication indispensable for those seeking to leverage its transformative potential.
Nanophotonics With Diamond And Silicon Carbide For Quantum Technologies
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Author : Mario Agio
language : en
Publisher: Elsevier
Release Date : 2025-04-18
Nanophotonics With Diamond And Silicon Carbide For Quantum Technologies written by Mario Agio and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-18 with Technology & Engineering categories.
Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies provides an in-depth overview of key developments in diamond and silicon carbide photonics to enable spin-photon interfaces, quantum computing, quantum imaging, and quantum sensing. Written by world experts, chapters discuss nanophotonics effects (atomic size point center properties in the materials), fabrication of photonic components and integrated photonics circuits, photonics and nanophotonics enabling quantum sensing, and quantum information and networks via spin-photon interface. This book is a valuable resource to researchers and professionals interested on the fundamentals, trends, and diamond and silicon carbide applications in the quantum technology industry. - Discusses experimental and computational methods needed to approach the fabrication and design of photonics components in diamond and silicon carbide - Describes characterization techniques to test photonics properties and the monolithic integration of atomic point defects within materials' nano- or micro-photonics cavity - Features the methodologies for the fabrication of photonics components, their integration towards wafer scale integrated photonics circuits, and nanophotonic with quantum functionalities
Modern Silicon Carbide Power Devices
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Author : B Jayant Baliga
language : en
Publisher: World Scientific
Release Date : 2023-09-18
Modern Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-09-18 with Technology & Engineering categories.
Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Properties Of Silicon Carbide
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Author : Gary Lynn Harris
language : en
Publisher: IET
Release Date : 1995
Properties Of Silicon Carbide written by Gary Lynn Harris and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.
This well structured and fully indexed book helps to understand and fully characterize the SiC system.