Physics And Technology Of Silicon Carbide Devices
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Physics And Technology Of Silicon Carbide Devices
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Author : Yasuto Hijikata
language : en
Publisher: BoD – Books on Demand
Release Date : 2012-10-16
Physics And Technology Of Silicon Carbide Devices written by Yasuto Hijikata and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-10-16 with Science categories.
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Physics And Technology Of Silicon Carbide Devices
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Author : George Gibbs
language : en
Publisher:
Release Date : 2016-10-01
Physics And Technology Of Silicon Carbide Devices written by George Gibbs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-01 with categories.
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Physics And Technology Of Silicon Carbide Devices
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Author : Yasuto Hijikata
language : en
Publisher: IntechOpen
Release Date : 2012-10-16
Physics And Technology Of Silicon Carbide Devices written by Yasuto Hijikata and has been published by IntechOpen this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-10-16 with Science categories.
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-11-24
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-24 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Silicon Carbide
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Author : Wolfgang J. Choyke
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Silicon Carbide written by Wolfgang J. Choyke and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
Silicon Carbide Power Devices
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Author : B Jayant Baliga
language : en
Publisher: World Scientific
Release Date : 2006-01-05
Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-05 with Technology & Engineering categories.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Advancing Silicon Carbide Electronics Technology I
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Author : Konstantinos Zekentes
language : en
Publisher: Materials Research Forum LLC
Release Date : 2018-09-20
Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-20 with Technology & Engineering categories.
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Advancing Silicon Carbide Electronics Technology Ii
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Author : Konstantinos Zekentes
language : en
Publisher: Materials Research Forum LLC
Release Date : 2020-03-15
Advancing Silicon Carbide Electronics Technology Ii written by Konstantinos Zekentes and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-15 with Technology & Engineering categories.
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Silicon Carbide Micro Electromechanical Systems For Harsh Environments
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Author : Rebecca Cheung
language : en
Publisher: Imperial College Press
Release Date : 2006
Silicon Carbide Micro Electromechanical Systems For Harsh Environments written by Rebecca Cheung and has been published by Imperial College Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. Sample Chapter(s). Chapter 1: Introduction to Silicon Carbide (SIC) Microelectromechanical Systems (MEMS) (800 KB). Contents: Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) (R Cheung); Deposition Techniques for SiC MEMS (C A Zorman et al.); Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996OCo2002 (L M Porter & F A Mohammad); Dry Etching of SiC (S J Pearton); Design, Performance and Applications of SiC MEMS (S Zappe). Readership: Academic researchers in MEMS and industrial engineers engaged in SiC MEMS research."
Vertical Gan And Sic Power Devices
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Author : Kazuhiro Mochizuki
language : en
Publisher: Artech House Publishers
Release Date : 2018
Vertical Gan And Sic Power Devices written by Kazuhiro Mochizuki and has been published by Artech House Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Gallium nitride categories.
This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices.Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.