Simulation Based Design Optimization And Control Of Silicon Carbide And Gallium Nitride Thin Film Chemical Vapor Deposition Reactor Systems
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Simulation Based Design Optimization And Control Of Silicon Carbide And Gallium Nitride Thin Film Chemical Vapor Deposition Reactor Systems
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Author : Rinku Pankaj Parikh
language : en
Publisher:
Release Date : 2006
Simulation Based Design Optimization And Control Of Silicon Carbide And Gallium Nitride Thin Film Chemical Vapor Deposition Reactor Systems written by Rinku Pankaj Parikh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 2007
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Dissertations, Academic categories.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Multiscale Computational Fluid Dynamics Modeling Parallelization And Application To Design And Control Of Plasma Enhanced Chemical Vapor Deposition Of Thin Film Solar Cells
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Author : Marquis Grant Crose
language : en
Publisher:
Release Date : 2018
Multiscale Computational Fluid Dynamics Modeling Parallelization And Application To Design And Control Of Plasma Enhanced Chemical Vapor Deposition Of Thin Film Solar Cells written by Marquis Grant Crose and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.
Today, plasma-enhanced chemical vapor deposition (PECVD) remains the dominant processing method for the manufacture of silicon thin films due to inexpensive production and low operating temperatures. Nonetheless, thickness non-uniformity continues to prevent the deposition of high quality thin film layers across large wafer substrates; thickness deviations up to 20% are typical for 200 mm and above wafers. Regardless of industry, be it solar cell production or microelectronic devices, the demand for densely packed die with high quality creates a need for improved modeling and operational strategies. Over the past two decades, a number of research groups have built microscopic models for thin film growth, as well as macroscopic reactor models to approximate the gas phase reaction and transport phenomena present within PECVD systems. Unfortunately, many of the proposed modeling and simulation techniques have been overly simplified in order to reduce computational demands, or fail to capture both the macro- and microscopic domains simultaneously. In order to address persistent issues related to thickness non-uniformity in silicon processing, advanced multiscale models are needed. Motivated by these considerations, novel reactor modeling and operational control strategies are developed in this dissertation. Specifically, a macroscopic reactor scale model is presented which captures the creation of a radio frequency (RF) plasma, transport throughout the reactor domain, and thirty-four dominant plasma-phase reactions. In Chapters 2 and 3, the gas-phase dynamics are approximated using a first principles-based model, whereas the latter half of this dissertation relies on a computational fluid dynamics approach. At the microscopic scale, the complex particle interactions that define the growth of a-Si:H thin film layers are tracked using a hybrid kinetic Monte Carlo algorithm. These scales are linked via a dynamic boundary condition which is updated at the completion of each time step. A computationally efficient parallel programming scheme allows for significantly shortened computational times and solutions to previously infeasible system sizes. Transient batch deposition cycles using the aforementioned multiscale model provide new insight into the operation of PECVD systems; spatial non-uniformity in the concentration of SiH3 and H above the substrate surface is recognized as the primary mechanism responsible for non-uniform thin film product thicknesses. Two key modes are identified to address the aforementioned non-uniformity: (1) run-to-run control of the wafer substrate temperature through the adaptation of an exponentially-weighted moving average algorithm, and (2) the design of new CVD geometries which minimize spatial variations in the concentration of deposition species. These efforts have resulted in optimized PECVD showerhead designs and spatial temperature profiles which limit the thin film thickness non-uniformity to within 1% of the product specification.
Proceedings Of The Asme Design Engineering Technical Conferences
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Author :
language : en
Publisher:
Release Date : 2006
Proceedings Of The Asme Design Engineering Technical Conferences written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Computer-aided design categories.
Chemical Vapor Deposition 1960 1980
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Author : Donald T. Hawkins
language : en
Publisher: Springer
Release Date : 1981-11-30
Chemical Vapor Deposition 1960 1980 written by Donald T. Hawkins and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981-11-30 with Reference categories.
Silicon Carbide
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Author : Wolfgang J. Choyke
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Silicon Carbide written by Wolfgang J. Choyke and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Ceramic Abstracts
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Author :
language : en
Publisher:
Release Date : 2000
Ceramic Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Ceramics categories.
Computer Aided Multi Scale Design Of Sic Si3n4 Nanoceramic Composites For High Temperature Structural Applications
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Author :
language : en
Publisher:
Release Date : 2010
Computer Aided Multi Scale Design Of Sic Si3n4 Nanoceramic Composites For High Temperature Structural Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
It is estimated that by using better and improved high temperature structural materials, the power generation efficiency of the power plants can be increased by 15% resulting in significant cost savings. One such promising material system for future high-temperature structural applications in power plants is Silicon Carbide-Silicon Nitride (SiC-Si3N4) nanoceramic matrix composites. The described research work focuses on multiscale simulation-based design of these SiC-Si3N4 nanoceramic matrix composites. There were two primary objectives of the research: (1) Development of a multiscale simulation tool and corresponding multiscale analyses of the high-temperature creep and fracture resistance properties of the SiC-Si3N4 nanocomposites at nano-, meso- and continuum length- and timescales; and (2) Development of a simulation-based robust design optimization methodology for application to the multiscale simulations to predict the range of the most suitable phase morphologies for the desired high-temperature properties of the SiC-Si3N4 nanocomposites. The multiscale simulation tool is based on a combination of molecular dynamics (MD), cohesive finite element method (CFEM), and continuum level modeling for characterizing time-dependent material deformation behavior. The material simulation tool is incorporated in a variable fidelity model management based design optimization framework. Material modeling includes development of an experimental verification framework. Using material models based on multiscaling, it was found using molecular simulations that clustering of the SiC particles near Si3N4 grain boundaries leads to significant nanocomposite strengthening and significant rise in fracture resistance. It was found that a control of grain boundary thicknesses by dispersing non-stoichiometric carbide or nitride phases can lead to reduction in strength however significant rise in fracture strength. The temperature dependent strength and microstructural stability was also significantly depended upon the dispersion of new phases at grain boundaries. The material design framework incorporates high temperature creep and mechanical strength data in order to develop a collaborative multiscale framework of morphology optimization. The work also incorporates a computer aided material design dataset development procedure where a systematic dataset on material properties and morphology correlation could be obtained depending upon a material processing scientist's requirements. Two different aspects covered under this requirement are: (1) performing morphology related analyses at the nanoscale and at the microscale to develop a multiscale material design and analyses capability; (2) linking material behavior analyses with the developed design tool to form a set of material design problems that illustrate the range of material design dataset development that could be performed. Overall, a software based methodology to design microstructure of particle based ceramic nanocomposites has been developed. This methodology has been shown to predict changes in phase morphologies required for achieving optimal balance of conflicting properties such as minimal creep strain rate and high fracture strength at high temperatures. The methodology incorporates complex material models including atomistic approaches. The methodology will be useful to design materials for high temperature applications including those of interest to DoE while significantly reducing cost of expensive experiments.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1994
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Dissertation abstracts categories.