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Solid State Devices 1979


Solid State Devices 1979
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Solid State Devices 1979


Solid State Devices 1979
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Author : Harold Weiss
language : en
Publisher: Institute of Physics Publishing (GB)
Release Date : 1980

Solid State Devices 1979 written by Harold Weiss and has been published by Institute of Physics Publishing (GB) this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with Science categories.




Solid State Devices


Solid State Devices
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Author :
language : en
Publisher:
Release Date : 1981

Solid State Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Semiconductors categories.


Contains invited papers presented at the European Solid State Device Research Conference.



Physics Of Semiconductor Devices Proceedings Of The Fourth International Workshop


Physics Of Semiconductor Devices Proceedings Of The Fourth International Workshop
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Author : S Radhakrishna
language : en
Publisher: World Scientific
Release Date : 1987-12-01

Physics Of Semiconductor Devices Proceedings Of The Fourth International Workshop written by S Radhakrishna and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987-12-01 with Science categories.


This volume compiles the papers presented at the conference which cover the various facets of semiconductor research with emphasis on microelectronics, VLSI and special aspects related to semiconductor applications. There are four sections: Microelectronics; Materials; Photovoltaics; and Gallium Arsenide Devices.



Technology Of Si Ge And Sic Technologie Von Si Ge Und Sic


Technology Of Si Ge And Sic Technologie Von Si Ge Und Sic
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Author : W. Dietze
language : en
Publisher: Springer Science & Business Media
Release Date : 1983-12

Technology Of Si Ge And Sic Technologie Von Si Ge Und Sic written by W. Dietze and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983-12 with Science categories.




Compound And Josephson High Speed Devices


Compound And Josephson High Speed Devices
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Author : Takahiko Misugi
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Compound And Josephson High Speed Devices written by Takahiko Misugi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.


In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.



Metal Semiconductor Contacts And Devices


Metal Semiconductor Contacts And Devices
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Author : Simon S. Cohen
language : en
Publisher: Academic Press
Release Date : 2014-12-01

Metal Semiconductor Contacts And Devices written by Simon S. Cohen and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.


VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.



Semiconductor Silicon 1981


Semiconductor Silicon 1981
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Author : Howard R. Huff
language : en
Publisher:
Release Date : 1981

Semiconductor Silicon 1981 written by Howard R. Huff and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Semiconductors categories.




Proceedings Of The 12th Conference On Solid State Devices Tokyo 1980


Proceedings Of The 12th Conference On Solid State Devices Tokyo 1980
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Author :
language : en
Publisher:
Release Date : 1981

Proceedings Of The 12th Conference On Solid State Devices Tokyo 1980 written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Semiconductors categories.




Solid State Devices 1979 Nine Invited Papers Presented At The Ninth European Solid State Device Research Conference Essderc And The Fourth Symposium On Solid State Device Technology Held At The Technical University Of Munich 10 14 September 1979


Solid State Devices 1979 Nine Invited Papers Presented At The Ninth European Solid State Device Research Conference Essderc And The Fourth Symposium On Solid State Device Technology Held At The Technical University Of Munich 10 14 September 1979
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Author : Institute of physics. conference series ; no.53. w
language : en
Publisher:
Release Date : 1980

Solid State Devices 1979 Nine Invited Papers Presented At The Ninth European Solid State Device Research Conference Essderc And The Fourth Symposium On Solid State Device Technology Held At The Technical University Of Munich 10 14 September 1979 written by Institute of physics. conference series ; no.53. w and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with categories.




Physics Of Semiconductor Devices


Physics Of Semiconductor Devices
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Author : Simon M. Sze
language : en
Publisher: John Wiley & Sons
Release Date : 2006-12-13

Physics Of Semiconductor Devices written by Simon M. Sze and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-12-13 with Technology & Engineering categories.


The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.