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Special Issue Gan Based Materials Devices

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Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Integration Of 2d Materials For Electronics Applications

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Author : Filippo Giannazzo
language : en
Publisher: MDPI
Release Date : 2019-02-13

Integration Of 2d Materials For Electronics Applications written by Filippo Giannazzo and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-02-13 with Science categories.

This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals

Nanoelectronic Materials Devices And Modeling

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Author : Qiliang Li
language : en
Publisher: MDPI
Release Date : 2019-07-15

Nanoelectronic Materials Devices And Modeling written by Qiliang Li and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-07-15 with Technology & Engineering categories.

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

2d Semiconductor Materials And Devices

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Author : Dongzhi Chi
language : en
Publisher: Elsevier
Release Date : 2019-10-19

2d Semiconductor Materials And Devices written by Dongzhi Chi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-19 with Technology & Engineering categories.

2D Semiconductor Materials and Devices reviews the basic science and state-of-art technology of 2D semiconductor materials and devices. Chapters discuss the basic structure and properties of 2D semiconductor materials, including both elemental (silicene, phosphorene) and compound semiconductors (transition metal dichalcogenide), the current growth and characterization methods of these 2D materials, state-of-the-art devices, and current and potential applications. - Reviews a broad range of emerging 2D electronic materials beyond graphene, including silicene, phosphorene and compound semiconductors - Provides an in-depth review of material properties, growth and characterization aspects—topics that could enable applications - Features contributions from the leading experts in the field

Wide Bandgap Semiconductor Based Micro Nano Devices

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Author : Jung-Hun Seo
language : en
Publisher: MDPI
Release Date : 2019-04-25

Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-04-25 with Technology & Engineering categories.

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Nitride Semiconductor Technology

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Author : Fabrizio Roccaforte
language : en
Publisher: Wiley-VCH
Release Date : 2020-08-24

Nitride Semiconductor Technology written by Fabrizio Roccaforte and has been published by Wiley-VCH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-24 with Technology & Engineering categories.

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Physical Properties Of Materials Third Edition

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Author : Mary Anne White
language : en
Publisher: CRC Press
Release Date : 2018-10-12

Physical Properties Of Materials Third Edition written by Mary Anne White and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-12 with Science categories.

Designed for advanced undergraduate students and as a useful reference book for materials researchers, Physical Properties of Materials, Third Edition establishes the principles that control the optical, thermal, electronic, magnetic, and mechanical properties of materials. Using an atomic and molecular approach, this introduction to materials science offers readers a wide-ranging survey of the field and a basis to understand future materials. The author incorporates comments on applications of materials science, extensive references to the contemporary and classic literature, and 350 end-of-chapter problems. In addition, unique tutorials allow students to apply the principles to understand applications, such as photocopying, magnetic devices, fiber optics, and more. This fully revised and updated Third Edition includes new materials and processes, such as topological insulators, 3-D printing, and more information on nanomaterials. The new edition also now adds Learning Goals at the end of each chapter and a Glossary with more than 500 entries for quick reference.

Gan And Zno Based Materials And Devices

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Author : Stephen Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-01-14

Gan And Zno Based Materials And Devices written by Stephen Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-01-14 with Technology & Engineering categories.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Wide Bandgap Based Devices

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Author : Farid Medjdoub
language : en
Publisher: MDPI
Release Date : 2021-05-26

Wide Bandgap Based Devices written by Farid Medjdoub and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-26 with Technology & Engineering categories.

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Special Issue Gan Based Materials Devices

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