Special Issue Gan Based Materials Devices

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Special Issue Gan Based Materials Devices

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Author : R. F. Davis
language : en
Publisher:
Release Date : 2004

Special Issue Gan Based Materials Devices written by R. F. Davis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.

Gan Based Materials And Devices Growth Fabrication Characterization And Performance

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Author : Robert F Davis
language : en
Publisher: World Scientific
Release Date : 2004-05-07

Gan Based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-05-07 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Recent Advances In Iii Nitride Semiconductors

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Author : Peng Chen
language : en
Publisher: Mdpi AG
Release Date : 2023-08-22

Recent Advances In Iii Nitride Semiconductors written by Peng Chen and has been published by Mdpi AG this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-08-22 with Technology & Engineering categories.

Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.

Nanoelectronic Materials Devices And Modeling

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Author : Qiliang Li
language : en
Publisher: MDPI
Release Date : 2019-07-15

Nanoelectronic Materials Devices And Modeling written by Qiliang Li and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-07-15 with Technology & Engineering categories.

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Wide Bandgap Based Devices

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Author : Farid Medjdoub
language : en
Publisher: MDPI
Release Date : 2021-05-26

Wide Bandgap Based Devices written by Farid Medjdoub and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-26 with Technology & Engineering categories.

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Feature Papers In Electronic Materials Section

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Author : Fabrizio Roccaforte
language : en
Publisher:
Release Date : 2022

Feature Papers In Electronic Materials Section written by Fabrizio Roccaforte and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

Power Gan Devices

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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08

Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Gan Based Lasers

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Author : Richard H. Miles
language : en
Publisher:
Release Date : 1998

Gan Based Lasers written by Richard H. Miles and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Gallium nitride categories.

Boron Nitride Nanostructures Special Issue Editors Philippe Miele Mikhael Bechelany Mdpi

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Author : Philippe Miele
language : en
Publisher: MDPI
Release Date : 2019-01-08

Boron Nitride Nanostructures Special Issue Editors Philippe Miele Mikhael Bechelany Mdpi written by Philippe Miele and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-08 with categories.

This book is a printed edition of the Special Issue "Boron Nitride Nanostructures" that was published in Nanomaterials