Spin Transfer Torque Based Devices Circuits And Memory
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Spin Transfer Torque Based Devices Circuits And Memory
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Author : Brajesh Kumar Kaushik
language : en
Publisher: MICROTECHNOLOGY NANOTECHNOLOGY
Release Date : 2016
Spin Transfer Torque Based Devices Circuits And Memory written by Brajesh Kumar Kaushik and has been published by MICROTECHNOLOGY NANOTECHNOLOGY this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with Spintronics categories.
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A.The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.
Next Generation Spin Torque Memories
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Author : Brajesh Kumar Kaushik
language : en
Publisher: Springer
Release Date : 2017-04-07
Next Generation Spin Torque Memories written by Brajesh Kumar Kaushik and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-04-07 with Technology & Engineering categories.
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Spintronics Based Computing
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Author : Weisheng Zhao
language : en
Publisher: Springer
Release Date : 2015-05-11
Spintronics Based Computing written by Weisheng Zhao and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-05-11 with Technology & Engineering categories.
This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.
Spin Transfer Torque Based Devices Circuits And Memory
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Author : Brajesh Kumar Kaushik
language : en
Publisher: Artech House
Release Date : 2016-10-31
Spin Transfer Torque Based Devices Circuits And Memory written by Brajesh Kumar Kaushik and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-31 with Technology & Engineering categories.
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.
Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory
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Author : Lohith Kumar Vemula
language : en
Publisher:
Release Date : 2016
Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory written by Lohith Kumar Vemula and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with Computer storage devices categories.
The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM circuits and architectures. we present a modified STT MRAM cell design, where each cell is comprised of one magnetic tunneling junction (MTJ) device and a regular access transistor. We provide analysis of device, circuit and memory architecture level issues of STT-MRAM. The Modified 1M1T STT-MRAM bit cell circuit offers simpler and more area- and power- efficient design compared to the existing STT-MRAM cell design. Some device-circuit co-design issues are investigated to demonstrate ways to reduce delay in MRAM circuits based on MTJ. An 8x8 conventional MRAM array is implemented using the existing 2M2T cell and the Modified 1M1T cell to perform a comparative analysis at the architecture level. The non-volatile nature of the proposed STT-MRAM is verified through SPICE simulation. The circuit implementations and simulations are performed for 45nm technology node. As the transistor scales down it is prone to subthreshold leakage, gate-dielectric leakage, Short channel effect and drain induced barrier lowering. Now alternative of Access transistor is needed. We are using FinFET as access transistor in the STT-MRAM bit cell. FinFET based bit cell is designed to get an advantage of scaling down. Analysis is done and proven that the power consumption, standalone leakage current is less when compared to NMOS based STT-MRAM bit cell. Also determined FinFET based bit cell produces less access time to access the logic value from MTJ. Now, Industry is looking to have computational and storage capability together and that can be achieved through STT-MRAM. Addition to that there is a possibility to reduce power consumption and leakage more. So replacing FinFET technology with Carbon Nano Tube Field Effect Transistor (CNTFET) is required. As the conventional STT-MRAM requires certain current to reverse the magnetization of MTJ and one CNTFET alone cannot produce sufficient current required to store the logic value into MTJ. So new Bit cell is proposed using 3 CNTFET and 1 MTJ, this bit cell is capable of storing 3 logic values at a time that is capable of doing computation and act as AND gate. Also it utilizes less power to be in active region. Sensing of any memory system is one of the main challenge in industry to get better performance with less resources. Conventional Sense Amplifier (SA) used to sense the value from SRAM, DRAM memory system is also used to sense the STT-MRAM memory. But use of conventional SA is prone to some error. Modified Sense Amplifier is designed to overcome the error produced from the conventional SA. It is compared with all the existing SA to get the performance details of the modified SA.
Scalable Spin Torque Driven Devices And Circuits For High Performance Memory And Computing
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Author : Mohammad Kazemi
language : en
Publisher:
Release Date : 2019
Scalable Spin Torque Driven Devices And Circuits For High Performance Memory And Computing written by Mohammad Kazemi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
"As CMOS technology approaches the intrinsic limits of scalability, higher performance requires more power consumption and circuit area. Employing the spin degree of freedom of electrons alone or in combination with the charge of electrons provides opportunities to reduce the power dissipation, enhance the performance of operation, and increase the integration density of computing systems. This dissertation describes studies of nanomagnetic spinbased devices and associated CMOS circuits for scalable, high performance memory and computing systems. The power, speed, and area tradeoffs associated with the magnetoresistive random access memory (MRAM) operating on the spin-transfer torque (STT) mechanism are investigated. Then, a memory system is presented which effectively addresses the challenges associated with the STT-MRAM by providing a hybrid dynamic/nonvolatile platform for data retention. The focus is next turned to memory and logic devices operating on spin-orbit torques (SOTs). To pave the way toward very-large-scale-integration (VLSI) systems delivering high performance operation with low power dissipation, mechanisms are described to effectively address three fundamental challenges in spin-orbitronics: (a) All-electrical deterministic switching, (b) Intrinsic logic operation, and (c) scalability. It is shown that shaping the magnetic energy landscape of perpendicularanisotropy devices breaks the symmetry of the SOT operation on the magnetization, thus enabling all-electrical switching using unipolar current pulses. It is also shown that the capability to switch magnetic devices with unipolar current pulses leads to a spin-orbit MRAM cell which, in contrast to state-of-the-art cells, provides read/write access via a single transistor. For spin-based computing to be adopted widely, energy efficient, high performance logic gates comprised of as few devices as possible are required. A universal logic gate is presented that can be implemented using the minimum possible number of spin-orbit devices. The gate performs logic operations in a ?stateful' manner, that is, the same devices retaining the logic operands simultaneously perform the logic operations and latch the outcome. Such universal logic gates greatly increase on-chip computational resources which can be effectively utilized thanks to the low energy dissipation. Finally, it is shown that scalability is not a fundamental limitation in spin-orbitronics. Design rules are derived that indicate the path to building deeply scalable spin-orbit devices exhibiting sub-nanosecond switching time at room temperature. Accordingly, we show that the spin-orbitronics may serve as a universal memory technology capable of implementing multiple levels of memory hierarchy."--Pages xii-xiii.
Metallic Spintronic Devices
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Author : Xiaobin Wang
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Metallic Spintronic Devices written by Xiaobin Wang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
Nanomagnetic And Spintronic Devices For Energy Efficient Memory And Computing
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Author : Jayasimha Atulasimha
language : en
Publisher: John Wiley & Sons
Release Date : 2016-03-07
Nanomagnetic And Spintronic Devices For Energy Efficient Memory And Computing written by Jayasimha Atulasimha and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-07 with Technology & Engineering categories.
Nanomagnetic and spintronic computing devices are strong contenders for future replacements of CMOS. This is an important and rapidly evolving area with the semiconductor industry investing significantly in the study of nanomagnetic phenomena and in developing strategies to pinpoint and regulate nanomagnetic reliably with a high degree of energy efficiency. This timely book explores the recent and on-going research into nanomagnetic-based technology. Key features: Detailed background material and comprehensive descriptions of the current state-of-the-art research on each topic. Focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing. Discusses spin-based devices where the spin degree of freedom of charge carriers are exploited for device operation and ultimately information processing. Describes magnet switching methodologies to minimize energy dissipation. Comprehensive bibliographies included for each chapter enabling readers to conduct further research in this field. Written by internationally recognized experts, this book provides an overview of a rapidly burgeoning field for electronic device engineers, field-based applied physicists, material scientists and nanotechnologists. Furthermore, its clear and concise form equips readers with the basic understanding required to comprehend the present stage of development and to be able to contribute to future development. Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing is also an indispensable resource for students and researchers interested in computer hardware, device physics and circuits design.
Non Volatile In Memory Computing By Spintronics
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Author : Hao Yu
language : en
Publisher: Springer Nature
Release Date : 2022-05-31
Non Volatile In Memory Computing By Spintronics written by Hao Yu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.
Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.
Compact Modeling And Circuit Design Based On Ferroelectric Tunnel Junction And Spin Hall Assisted Spin Transfer Torque Anglais
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Author : Zhaohao Wang
language : en
Publisher:
Release Date : 2015
Compact Modeling And Circuit Design Based On Ferroelectric Tunnel Junction And Spin Hall Assisted Spin Transfer Torque Anglais written by Zhaohao Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
Non-volatile memory (NVM) devices have been attracting intensive research interest since they promise to solve the increasing static power issue caused by CMOS technology scaling. This thesis focuses on two fields related to NVM: the one is the ferroelectric tunnel junction (FTJ), which is a recent emerging NVM device. The other is the spin-Hall-assisted spin-transfer torque (STT), which is a recent proposed write approach for the magnetic tunnel junction (MTJ). Our objective is to develop the compact models for these two technologies and to explore their application in the non-volatile circuits through simulation.First, we investigated physical models describing the electrical behaviors of the FTJ such as tunneling resistance, dynamic ferroelectric switching and memristive response. The accuracy of these physical models is validated by a good agreement with experimental results. In order to develop an electrical model available for the circuit simulation, we programmed the aforementioned physical models with Verilog-A language and integrated them together. The developed electrical model can run on Cadence platform (a standard circuit simulation tool) and faithfully reproduce the behaviors of the FTJ.Then, using the developed FTJ model and STMicroelectronics CMOS design kit, we designed and simulated three types of circuits: i) FTJ-based random access memory (FTRAM), ii) two FTJ-based neuromorphic systems, one of which emulates spike-timing dependent plasticity (STDP) learning rule, the other implements supervised learning of logic functions, iii) FTJ-based Boolean logic block, by which NAND and NOR logic are demonstrated. The influences of the FTJ parameters on the performance of these circuits were analyzed based on simulation results.Finally, we focused on the reversal of the perpendicular magnetization driven by spin-Hall-assisted STT in a three-terminal MTJ. In this scheme, two write currents are applied to generate spin-Hall effect (SHE) and STT. Numerical simulation based on Landau-Lifshitz-Gilbert (LLG) equation demonstrates that the incubation delay of the STT can be eliminated by the strong SHE, resulting in ultrafast magnetization switching without the need to strengthen the STT. We applied this novel write approach to the design of the magnetic flip-flop and full-adder. Performance comparison between the spin-Hall-assisted and the conventional STT magnetic circuits were discussed based on simulation results and theoretical models.