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Strained Layer Quantum Wells And Their Application


Strained Layer Quantum Wells And Their Application
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Strained Layer Quantum Wells And Their Applications


Strained Layer Quantum Wells And Their Applications
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Author : M. O. Manasreh
language : en
Publisher: CRC Press
Release Date : 1997-12-23

Strained Layer Quantum Wells And Their Applications written by M. O. Manasreh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-12-23 with Science categories.


Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.



Current Trends In Optical Amplifiers And Their Applications


Current Trends In Optical Amplifiers And Their Applications
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Author : Tien-Pei Lee
language : en
Publisher: World Scientific
Release Date : 1996

Current Trends In Optical Amplifiers And Their Applications written by Tien-Pei Lee and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.


This volume of trends in optical amplifiers and their applications includes such topics as: progess in optical fibre amplifiers; reliability of high-power pump lasers for erbium-doped fibre amplifiers; and inP-based optical switch array using semiconductor optical amplifiers.



Microprobe Characterization Of Optoelectronic Materials


Microprobe Characterization Of Optoelectronic Materials
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Author : Juan Jimenez
language : en
Publisher: CRC Press
Release Date : 2024-11-01

Microprobe Characterization Of Optoelectronic Materials written by Juan Jimenez and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-11-01 with Technology & Engineering categories.


Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.



Lead Chalcogenides


Lead Chalcogenides
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Author : D. Khokhlov
language : en
Publisher: CRC Press
Release Date : 2002-11-15

Lead Chalcogenides written by D. Khokhlov and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-11-15 with Technology & Engineering categories.


Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.



Iii V Nitride Semiconductors


Iii V Nitride Semiconductors
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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30

Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-30 with Technology & Engineering categories.


The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.



Strained Layer Quantum Wells And Their Application


Strained Layer Quantum Wells And Their Application
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Author : M. O. Manasresh
language : en
Publisher:
Release Date : 1997

Strained Layer Quantum Wells And Their Application written by M. O. Manasresh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Quantum wells categories.




Silicon Germanium Carbon Alloys


Silicon Germanium Carbon Alloys
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Author : S. Pantellides
language : en
Publisher: CRC Press
Release Date : 2002-07-26

Silicon Germanium Carbon Alloys written by S. Pantellides and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-07-26 with Technology & Engineering categories.


Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials



Inp And Related Compounds


Inp And Related Compounds
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Author : M O Manasreh
language : en
Publisher: CRC Press
Release Date : 2000-08-08

Inp And Related Compounds written by M O Manasreh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-08-08 with Technology & Engineering categories.


InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.



Iii Nitride Semiconductors


Iii Nitride Semiconductors
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Author : Hongxing Jiang
language : en
Publisher: CRC Press
Release Date : 2002-07-26

Iii Nitride Semiconductors written by Hongxing Jiang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-07-26 with Technology & Engineering categories.


This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices. Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.



Silicon Carbide


Silicon Carbide
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Author : Chuan Feng Zhe
language : en
Publisher: CRC Press
Release Date : 2003-10-30

Silicon Carbide written by Chuan Feng Zhe and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-30 with Technology & Engineering categories.


This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.