Structural Characterization Of Doped Gasb Single Crystals By X Ray Topography

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Structural Characterization Of Doped Gasb Single Crystals By X Ray Topography

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Author :
language : en
Publisher:
Release Date : 2009

Structural Characterization Of Doped Gasb Single Crystals By X Ray Topography written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.

We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ([Delta]d/d) on the order of 10−5. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.

Issues In Electronic Circuits Devices And Materials 2011 Edition

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Author :
language : en
Publisher: ScholarlyEditions
Release Date : 2012-01-09

Issues In Electronic Circuits Devices And Materials 2011 Edition written by and has been published by ScholarlyEditions this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-01-09 with Technology & Engineering categories.

Issues in Electronic Circuits, Devices, and Materials: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Electronic Circuits, Devices, and Materials. The editors have built Issues in Electronic Circuits, Devices, and Materials: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Electronic Circuits, Devices, and Materials in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronic Circuits, Devices, and Materials: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

X Ray Diffraction From Thin Film Structures

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Author : Ge Liu
language : en
Publisher:
Release Date : 2007

X Ray Diffraction From Thin Film Structures written by Ge Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.

InAs/GaSb superlattices grown via molecular beam epitaxy, and containing InSb-like interfacial layers, were analyzed with a combination of x-ray diffraction (XRD) and structural refinement techniques. The superlattice refinement from x-rays (SUPREX) method determines with high accuracy the average thicknesses and d-spacings of the individual InAs and GaSb layers in addition to standard structural parameters usually obtained by XRD, such as the modulation length (periodicity), average out-of-plane interplanar spacings, and total thickness. The combined SUPREX/XRD experiments show that the absence of certain odd order satellite features in the x-ray data is due to asymmetric and inhomogeneous lattice strain. \textit{Ex situ}-annealed InAs/GaSb superlattices were studied using atomic force microscopy (AFM) and XRD methods. Results show that annealing at temperatures between 200 °C and 300 °C for 1 hour in HVAC improves the structural quality of these superlattices. Strain relaxation occurs during the annealing process indicating that there are chemical intermixing and anion segregation in the superlattices. The effect of the inner-molecular electron density on the x-ray diffraction profile of a layer-stacked thin film is studied. Important phase information contained in the x-ray diffraction profile of highly anisotropic molecular-based thin films is charaterized. The experimental and calculated results show that the intensity distribution of the diffraction peaks belonging to the same lattice orientation provides important structural information. For example, tilt angle and core electron density of a molecule can be determined from the intensity distribution. The out-of-plane tilt angle relaxation is studied numerically. The results show that the relaxation can only occur at the first phthalocyanine monolayer above the substrate. The lateral grain size effect and the polar angle anisotropy are studied using a three-dimensional model. The FWHM of the center peak in associated rocking curves gives lateral coherence length or lateral grain size, and the ratio of the intensities from the diffraction peaks in normal diffraction curves shows the uniaxial angular anisotropy of the phthalocyanine thin films.

Synchrotron White Beam X Ray Topography Studies Of 3 2 Indium Doped Gaas And Gasb Single Crystals

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Author : Jingang Su
language : en
Publisher:
Release Date : 1996

Synchrotron White Beam X Ray Topography Studies Of 3 2 Indium Doped Gaas And Gasb Single Crystals written by Jingang Su and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Crystals categories.

Physics Of Semiconductor Devices 99

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Author : Vikram Kumar
language : en
Publisher: SPIE-International Society for Optical Engineering
Release Date : 2000

Physics Of Semiconductor Devices 99 written by Vikram Kumar and has been published by SPIE-International Society for Optical Engineering this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.

Crystal Growth Bibliography

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Author :
language : en
Publisher: Springer Nature
Release Date : 1981

Crystal Growth Bibliography written by and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with categories.

Gallium Arsenide Iii

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Author : P. Kordoš
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1989-01-01

Gallium Arsenide Iii written by P. Kordoš and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-01-01 with Technology & Engineering categories.

Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988

Synchrotron White Beam X Ray Topography Characterization Of Lgx And Sxgs Bulk Single Crystals Thin Films And Piezoelectric Devices

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Author :
language : en
Publisher:
Release Date : 2007

Synchrotron White Beam X Ray Topography Characterization Of Lgx And Sxgs Bulk Single Crystals Thin Films And Piezoelectric Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.

This project comprised a program of research aimed at applying the technique of Synchrotron White Beam X-ray Topography (SWBXT), supplemented by the complementary technique of High Resolution Triple-Axis X-ray Diffraction (HRTXD), to the determination of defect and general distortion distributions in novel LGX piezoelectric crystals with a view to enabling improvement in crystal quality and consequently in piezoelectric device performance. The LGX family of compounds, which includes langanite, LGS (La3Ga5SiO14), and its isomorphs, langanite or LGN (La3Ga5.5Nb0.5O14) and langatate or LGT (La3Ga5.5Ta0.5O14), as well as several other variants, are of current interest for application as bulk wave resonators for precision oscillators, with all these materials exhibiting high piezoelectric coupling, low acoustic loss (high Q) and temperature compensation. However, the influence of crystal quality on piezoelectric properties, for example, on mode shapes dictates that high quality crystals are required for this technology to reach full potential. This requires collaboration between crystal growers and characterizers to gain an understanding of the defect content of the crystals and to enable optimization of growth parameters. To this end, detailed SWBXT studies will be carried out on: (1) bulk LGX crystals grown using the Czochralski technique, (2) homo- and heteroepitaxial thin films of LGX, and (3) various LGX resonator structures including Surface Acoustic Wave (SAW) resonators. (4) Selected Quartz Resonators (5) SiC substrates/epilayers.

Crystal Growth Bibliography

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Author : Anne M. Keesee
language : en
Publisher:
Release Date : 1979

Crystal Growth Bibliography written by Anne M. Keesee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with Crystal growth categories.

Structural Characterization Of Tetracene Films By Lateral Force Microscopy And Grazing Incidence X Ray Diffraction

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Author : Andrew Tersigni
language : en
Publisher:
Release Date : 2012

Structural Characterization Of Tetracene Films By Lateral Force Microscopy And Grazing Incidence X Ray Diffraction written by Andrew Tersigni and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.