The Aggregation And Diffusion Of Oxygen In Silicon

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The Aggregation And Diffusion Of Oxygen In Silicon
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Author : A. S. Oates
language : en
Publisher:
Release Date : 1985
The Aggregation And Diffusion Of Oxygen In Silicon written by A. S. Oates and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
Springer Handbook Of Crystal Growth
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Author : Govindhan Dhanaraj
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-10-20
Springer Handbook Of Crystal Growth written by Govindhan Dhanaraj and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-10-20 with Science categories.
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes
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Author : E M Anastassakis
language : en
Publisher: World Scientific
Release Date : 1990-11-29
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-11-29 with categories.
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Hydrogen In Semiconductors
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Author : M. Stutzmann
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Hydrogen In Semiconductors written by M. Stutzmann and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account.This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
C H N And O In Si And Characterization And Simulation Of Materials And Processes
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Author : A. Borghesi
language : en
Publisher: Newnes
Release Date : 2012-12-02
C H N And O In Si And Characterization And Simulation Of Materials And Processes written by A. Borghesi and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Shallow Level Centers In Semiconductors Proceedings Of The 7th International Conference
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Author : C A J Ammerlaan
language : en
Publisher: World Scientific
Release Date : 1997-04-19
Shallow Level Centers In Semiconductors Proceedings Of The 7th International Conference written by C A J Ammerlaan and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-04-19 with categories.
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
High Purity Silicon Viii
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Author : Cor L. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 2004
High Purity Silicon Viii written by Cor L. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Growth Of Crystals
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Author : E.I. Givargizov
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Growth Of Crystals written by E.I. Givargizov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.
September 16
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Author : Görlich
language : en
Publisher: Walter de Gruyter GmbH & Co KG
Release Date : 2022-01-19
September 16 written by Görlich and has been published by Walter de Gruyter GmbH & Co KG this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-19 with Science categories.
No detailed description available for "September 16".