The Aggregation And Diffusion Of Oxygen In Silicon
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The Aggregation And Diffusion Of Oxygen In Silicon
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Author : A. S. Oates
language : en
Publisher:
Release Date : 1985
The Aggregation And Diffusion Of Oxygen In Silicon written by A. S. Oates and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
Early Stages Of Oxygen Precipitation In Silicon
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Author : R. Jones
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Early Stages Of Oxygen Precipitation In Silicon written by R. Jones and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Oxygen In Silicon
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Author :
language : en
Publisher: Academic Press
Release Date : 1994-08-15
Oxygen In Silicon written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-08-15 with Technology & Engineering categories.
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
Handbook Of Silicon Based Mems Materials And Technologies
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Author : Markku Tilli
language : en
Publisher: Elsevier
Release Date : 2009-12-08
Handbook Of Silicon Based Mems Materials And Technologies written by Markku Tilli and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-12-08 with Technology & Engineering categories.
A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: Silicon as MEMS material Material properties and measurement techniques Analytical methods used in materials characterization Modeling in MEMS Measuring MEMS Micromachining technologies in MEMS Encapsulation of MEMS components Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
Hydrogen In Semiconductors
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Author : M. Stutzmann
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Hydrogen In Semiconductors written by M. Stutzmann and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes
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Author : E M Anastassakis
language : en
Publisher: World Scientific
Release Date : 1990-11-29
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-11-29 with categories.
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Science And Technology Of Defects In Silicon
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Author : C.A.J. Ammerlaan
language : en
Publisher: Elsevier
Release Date : 2014-01-01
Science And Technology Of Defects In Silicon written by C.A.J. Ammerlaan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-01 with Technology & Engineering categories.
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
High Purity Silicon Viii
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Author : Cor L. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 2004
High Purity Silicon Viii written by Cor L. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.
C H N And O In Si And Characterization And Simulation Of Materials And Processes
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Author : A. Borghesi
language : en
Publisher: Newnes
Release Date : 2012-12-02
C H N And O In Si And Characterization And Simulation Of Materials And Processes written by A. Borghesi and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Growth Of Crystals
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Author : E.I. Givargizov
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Growth Of Crystals written by E.I. Givargizov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.