The Deposition Of Pure Boron
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The Deposition Of Pure Boron
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Author :
language : en
Publisher:
Release Date : 1947
The Deposition Of Pure Boron written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1947 with Boron steel categories.
Deposition Of Pure Boron
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 1947
Deposition Of Pure Boron written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1947 with Boron steel categories.
The Deposition Of Pure Boron
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Author : Hermann Irving Schlesinger
language : en
Publisher:
Release Date : 1947
The Deposition Of Pure Boron written by Hermann Irving Schlesinger and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1947 with Boron steel categories.
Low Temperature Pure Boron Layer Deposition For Silicon Diode And Micromachining Applications
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Author : Xingyu Liu
language : en
Publisher:
Release Date : 2021
Low Temperature Pure Boron Layer Deposition For Silicon Diode And Micromachining Applications written by Xingyu Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
The Deposition Of Boron From The Hydrides Of Boron And From Boron Tribromide
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Author : Robert Lewis Brandaur
language : en
Publisher:
Release Date : 1938
The Deposition Of Boron From The Hydrides Of Boron And From Boron Tribromide written by Robert Lewis Brandaur and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1938 with Boron compounds categories.
Preparing Boron By Fused Salt Electrolysis
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Author : D. Z. Hobbs
language : en
Publisher:
Release Date : 1961
Preparing Boron By Fused Salt Electrolysis written by D. Z. Hobbs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1961 with Boron categories.
Deposition By Electron Bombardment And Weighing Under Vacuum Of Thin High Purity Boron Layers
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Author :
language : en
Publisher:
Release Date : 1964
Deposition By Electron Bombardment And Weighing Under Vacuum Of Thin High Purity Boron Layers written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with categories.
Deposition By Electron Bombardment And Weighing Under Vacuum Of Thin High Purity Boron Layers
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Author : J. van Audenhove
language : en
Publisher:
Release Date : 1964
Deposition By Electron Bombardment And Weighing Under Vacuum Of Thin High Purity Boron Layers written by J. van Audenhove and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with categories.
Boron Deposition From Fused Salts Final Report
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Author :
language : en
Publisher:
Release Date : 1980
Boron Deposition From Fused Salts Final Report written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with categories.
A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements.
Chemical Vapour Deposition Of Sp2 Hybridised Boron Nitride
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Author : Mikhail Chubarov
language : en
Publisher: Linköping University Electronic Press
Release Date : 2014-12-04
Chemical Vapour Deposition Of Sp2 Hybridised Boron Nitride written by Mikhail Chubarov and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-04 with categories.
The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp2-BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures. For the growth of sp2-BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H2 as carrier gas is found to be necessary for the growth of crystalline sp2-BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp2-BN film. It was observed that for the growth of crystalline sp2-BN on c-axis oriented ?-Al2O3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp2-BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp2-BN is 1500 °C. Nevertheless, the growth of crystalline sp2-BN was also observed on ?-Al2O3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp2-BN was formed, according to X-ray diffraction. Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on ?-Al2O3 with an AlN buffer layer starts with the formation of hexagonal BN (h-BN) for a thickness of around 4 nm. The formation of h-BN was observed at growth temperatures of 1200 °C and 1500 °C on ?-Al2O3 with AlN buffer layer while there were no traces of h-BN found in the films deposited on SiC substrates in the temperature range between 1200 °C and 1700 °C. As an explanation for such growth behaviour, reproduction of the substrate crystal stacking is suggested. Nucleation and growth mechanism are investigated and presented in the papers included in this thesis.