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The Monte Carlo Method For Semiconductor Device Simulation


The Monte Carlo Method For Semiconductor Device Simulation
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The Monte Carlo Method For Semiconductor Device Simulation


The Monte Carlo Method For Semiconductor Device Simulation
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Author : Carlo Jacoboni
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

The Monte Carlo Method For Semiconductor Device Simulation written by Carlo Jacoboni and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.



Monte Carlo Simulation Of Semiconductor Devices


Monte Carlo Simulation Of Semiconductor Devices
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Author : C. Moglestue
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Monte Carlo Simulation Of Semiconductor Devices written by C. Moglestue and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Computers categories.


Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.



The Monte Carlo Method For Semiconductor Device Simulation


The Monte Carlo Method For Semiconductor Device Simulation
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Author : Carlo Jacoboni
language : en
Publisher: Springer Science & Business Media
Release Date : 1989-10-30

The Monte Carlo Method For Semiconductor Device Simulation written by Carlo Jacoboni and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-10-30 with Technology & Engineering categories.


This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.



Hierarchical Device Simulation


Hierarchical Device Simulation
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Author : Christoph Jungemann
language : en
Publisher: Springer
Release Date : 2012-09-05

Hierarchical Device Simulation written by Christoph Jungemann and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-05 with Technology & Engineering categories.


This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.



Introduction To Semiconductor Device Modelling


Introduction To Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: World Scientific
Release Date : 1998

Introduction To Semiconductor Device Modelling written by Christopher M. Snowden and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.


This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.



Handbook Of Optoelectronic Device Modeling And Simulation


Handbook Of Optoelectronic Device Modeling And Simulation
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Author : Joachim Piprek
language : en
Publisher: CRC Press
Release Date : 2017-10-12

Handbook Of Optoelectronic Device Modeling And Simulation written by Joachim Piprek and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-12 with Science categories.


Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This handbook shows how we can probe the underlying and highly complex physical processes using modern mathematical models and numerical simulation for optoelectronic device design, analysis, and performance optimization. It reflects the wide availability of powerful computers and advanced commercial software, which have opened the door for non-specialists to perform sophisticated modeling and simulation tasks. The chapters comprise the know-how of more than a hundred experts from all over the world. The handbook is an ideal starting point for beginners but also gives experienced researchers the opportunity to renew and broaden their knowledge in this expanding field.



Computational Electronics


Computational Electronics
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Author : Dragica Vasileska
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Computational Electronics written by Dragica Vasileska and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.


Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.



Semiconductor Transport


Semiconductor Transport
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Author : David Ferry
language : en
Publisher: CRC Press
Release Date : 2016-08-12

Semiconductor Transport written by David Ferry and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-08-12 with Science categories.


The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics. Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.



Monte Carlo Device Simulation


Monte Carlo Device Simulation
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Author : Karl Hess
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Monte Carlo Device Simulation written by Karl Hess and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.



Semiconductor Device Modelling


Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.