Thermal Characterization And Modeling Of Heterojunction Bipolar Transistors
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Thermal Characterization And Modeling Of Heterojunction Bipolar Transistors
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Author : David S. Whitefield
language : en
Publisher:
Release Date : 1993
Thermal Characterization And Modeling Of Heterojunction Bipolar Transistors written by David S. Whitefield and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Bipolar transistors categories.
Large Signal Characterization And Modeling Of Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 1993
Large Signal Characterization And Modeling Of Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.
Heterojunction Bipolar Transistors For Circuit Design
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Author : Jianjun Gao
language : en
Publisher: John Wiley & Sons
Release Date : 2015-04-27
Heterojunction Bipolar Transistors For Circuit Design written by Jianjun Gao and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-04-27 with Technology & Engineering categories.
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Large Signal Characterization And Modeling Of The Heterojunction Bipolar Transistor
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Author : Douglas Andrew Teeter
language : en
Publisher:
Release Date : 1992
Large Signal Characterization And Modeling Of The Heterojunction Bipolar Transistor written by Douglas Andrew Teeter and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with categories.
Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors
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Author : Sharath Patil
language : en
Publisher:
Release Date : 2011
Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors written by Sharath Patil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Demand for high-speed and cost-effective devices has resulted in the development of smaller, high frequency devices. Since semiconductor devices are getting smaller, self-heating effects have become more important. Self-heating increases the temperature of the devices and results in variations in the electrical properties of the circuit in which these devices are used. Hence, it is important to accurately characterize the self-heating effects and develop reliable models, so that these effects can be taken into consideration in the simulations during the design process. This work deals with the development of the Vertical Bipolar Inter-Company (VBIC) model parameters to characterize self-heating in SOI SiGe transistors which have been fabricated by National Semiconductors (NSC). The distributed nature of thermal impedance of the wafer has been studied. The dependence of thermal resistance on the power dissipation has also been verified by DC characterization results. The time domain, DC and frequency domain measurements provide similar results for thermal resistance. The thermal resistance varies from 2400 K/W to 4700 K/W for a 0.25x20 [mu]m2 device manufactured by NSC.
Silicon Germanium Heterojunction Bipolar Transistors For Mm Wave Systems Technology Modeling And Circuit Applications
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Author : Niccolò Rinaldi
language : en
Publisher: River Publishers
Release Date : 2018-03-15
Silicon Germanium Heterojunction Bipolar Transistors For Mm Wave Systems Technology Modeling And Circuit Applications written by Niccolò Rinaldi and has been published by River Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03-15 with Technology & Engineering categories.
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Handbook Of Iii V Heterojunction Bipolar Transistors
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Author : William Liu
language : en
Publisher: Wiley-Interscience
Release Date : 1998-04-27
Handbook Of Iii V Heterojunction Bipolar Transistors written by William Liu and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-04-27 with Technology & Engineering categories.
The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.
Modeling And Characterization Of Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 1993
Modeling And Characterization Of Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Sige Gaas And Inp Heterojunction Bipolar Transistors
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Author : Jiann S. Yuan
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-12
Sige Gaas And Inp Heterojunction Bipolar Transistors written by Jiann S. Yuan and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-12 with Technology & Engineering categories.
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Modeling And Characterization Of Abrupt Heterojunction Bipolar Transistors
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Author : Kyounghoon Yang
language : en
Publisher:
Release Date : 1994
Modeling And Characterization Of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.