Thin Films Of Copper Oxide And Copper Grown By Atomic Layer Deposition For Applications In Metallization Systems Of Microelectronic Devices
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Thin Films Of Copper Oxide And Copper Grown By Atomic Layer Deposition For Applications In Metallization Systems Of Microelectronic Devices
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Author : Thomas Wächtler
language : en
Publisher: Thomas Waechtler
Release Date : 2010
Thin Films Of Copper Oxide And Copper Grown By Atomic Layer Deposition For Applications In Metallization Systems Of Microelectronic Devices written by Thomas Wächtler and has been published by Thomas Waechtler this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Thin Films Of Copper Oxide And Copper Grown By Atomic Layer Deposition For Applications In Metallization Systems Of Microelectronic Devices
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Author :
language : en
Publisher:
Release Date : 2006
Thin Films Of Copper Oxide And Copper Grown By Atomic Layer Deposition For Applications In Metallization Systems Of Microelectronic Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(tri-n- butylphosphane)copper(I)acetylacetonate [(nBu3P)2Cu(acac)]. This liquid, non-fluorinated & beta;-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160°C. Typical ALD-like growth behavior arises between 100 and 130°C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and self-saturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1980
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with Aeronautics categories.
Metalorganic Vapor Phase Epitaxy Movpe
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Author : Stuart Irvine
language : en
Publisher: John Wiley & Sons
Release Date : 2019-10-07
Metalorganic Vapor Phase Epitaxy Movpe written by Stuart Irvine and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-07 with Technology & Engineering categories.
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Chemistry In Microelectronics
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Author : Yannick Le Tiec
language : en
Publisher: John Wiley & Sons
Release Date : 2013-02-28
Chemistry In Microelectronics written by Yannick Le Tiec and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-02-28 with Technology & Engineering categories.
Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.
Metals Abstracts Index
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Author :
language : en
Publisher:
Release Date : 1996
Metals Abstracts Index written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Metallurgy categories.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1992
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Dissertation abstracts categories.
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
Ceramic Abstracts
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Author : American Ceramic Society
language : en
Publisher:
Release Date : 1996
Ceramic Abstracts written by American Ceramic Society and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Ceramics categories.
The Engineering Index Annual
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Author :
language : en
Publisher:
Release Date : 1992
The Engineering Index Annual written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Engineering categories.
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.