Transient Floating Body Effects For Memory Applications In Fully Depleted Soi Mosfets
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Transient Floating Body Effects For Memory Applications In Fully Depleted Soi Mosfets
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Author : Maryline Bawedin
language : en
Publisher: Presses univ. de Louvain
Release Date : 2007
Transient Floating Body Effects For Memory Applications In Fully Depleted Soi Mosfets written by Maryline Bawedin and has been published by Presses univ. de Louvain this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.
Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.
Floating Body Effects In Fully Depleted Soi Mosfets
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Author : Eric Paul Ver Ploeg
language : en
Publisher:
Release Date : 1993
Floating Body Effects In Fully Depleted Soi Mosfets written by Eric Paul Ver Ploeg and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Bipolar transistors categories.
Low Power Vlsi Design
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Author : Angsuman Sarkar
language : en
Publisher: Walter de Gruyter GmbH & Co KG
Release Date : 2016-08-08
Low Power Vlsi Design written by Angsuman Sarkar and has been published by Walter de Gruyter GmbH & Co KG this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-08-08 with Technology & Engineering categories.
This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts.
Floating Body Cell
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Author : Takashi Ohsawa
language : en
Publisher: CRC Press
Release Date : 2011-10-14
Floating Body Cell written by Takashi Ohsawa and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-14 with Science categories.
This book focuses on the technologies of the floating body cell (FBC), which is regarded as the most probable candidate to replace the conventional 1T-1C DRAM. It covers basic principles, procedures for device structure optimization, operational methods, relations between different applications, and their suitable technology options. One of the aut
Threshold Voltage And Subthreshold Current In Fully Depleted Soi Mosfets And Their Transient Behavior
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Author : Fariborz Assaderaghi
language : en
Publisher:
Release Date : 1993
Threshold Voltage And Subthreshold Current In Fully Depleted Soi Mosfets And Their Transient Behavior written by Fariborz Assaderaghi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Nanoscale Semiconductor Memories
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Author : Santosh K. Kurinec
language : en
Publisher: CRC Press
Release Date : 2017-07-28
Nanoscale Semiconductor Memories written by Santosh K. Kurinec and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-28 with Technology & Engineering categories.
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Measurement And Modeling Of Transient Effects In Partially Depleted Soi Mosfet S
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Author : Andy Wei
language : en
Publisher:
Release Date : 1996
Measurement And Modeling Of Transient Effects In Partially Depleted Soi Mosfet S written by Andy Wei and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Semiconductor On Insulator Materials For Nanoelectronics Applications
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Author : Alexei Nazarov
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-03-03
Semiconductor On Insulator Materials For Nanoelectronics Applications written by Alexei Nazarov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-03-03 with Technology & Engineering categories.
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Science Abstracts
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Author :
language : en
Publisher:
Release Date : 1993
Science Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Electrical engineering categories.
Ieice Transactions On Electronics
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Author :
language : en
Publisher:
Release Date : 1997
Ieice Transactions On Electronics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electronics categories.