Vlsi Design Of Non Volatile Memories
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Vlsi Design Of Non Volatile Memories
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Author : Giovanni Campardo
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-01-18
Vlsi Design Of Non Volatile Memories written by Giovanni Campardo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-01-18 with Computers categories.
VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Vlsi Design Of Non Volatile Memories
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Author : Campardo
language : en
Publisher:
Release Date : 2007-10-01
Vlsi Design Of Non Volatile Memories written by Campardo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-10-01 with categories.
Logic Non Volatile Memory The Nvm Solutions For Ememory
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Author : Charles Ching-hsiang Hsu
language : en
Publisher: World Scientific
Release Date : 2014-03-18
Logic Non Volatile Memory The Nvm Solutions For Ememory written by Charles Ching-hsiang Hsu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-18 with Technology & Engineering categories.
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Error Correction Codes For Non Volatile Memories
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Author : Rino Micheloni
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-06-03
Error Correction Codes For Non Volatile Memories written by Rino Micheloni and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-06-03 with Technology & Engineering categories.
Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.
Silicon Non Volatile Memories
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Author : Barbara de Salvo
language : en
Publisher: John Wiley & Sons
Release Date : 2013-05-10
Silicon Non Volatile Memories written by Barbara de Salvo and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-05-10 with Technology & Engineering categories.
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
3d Flash Memories
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Author : Rino Micheloni
language : en
Publisher: Springer
Release Date : 2016-05-26
3d Flash Memories written by Rino Micheloni and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-05-26 with Computers categories.
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
Flash Memories
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Author : Paulo Cappelletti
language : en
Publisher: Springer
Release Date : 1999-06-30
Flash Memories written by Paulo Cappelletti and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-06-30 with Technology & Engineering categories.
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Advances In Non Volatile Memory And Storage Technology
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Author : Yoshio Nishi
language : en
Publisher: Woodhead Publishing
Release Date : 2019-06-15
Advances In Non Volatile Memory And Storage Technology written by Yoshio Nishi and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-15 with Technology & Engineering categories.
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
Digital Vlsi Design
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Author : Singh Ajay Kumar
language : en
Publisher: PHI Learning Pvt. Ltd.
Release Date : 2010-06-30
Digital Vlsi Design written by Singh Ajay Kumar and has been published by PHI Learning Pvt. Ltd. this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-30 with Computers categories.
This well-organised book provides an in-depth coverage of VLSI design engineering, which ranges from CMOS logic to physical design automation. The book begins with a discussion on the structure and operation of MOS as MOSFET is the basic building block for any VLSI design. Then, it goes on to explain the various fabrication methods of MOSFET and CMOS, implementation and properties of MOS inverter circuit, and parasitic parameters and resistances associated with MOSFET, which determine and ultimately limit the performance of a digital system. Besides, it describes design methodology and the concept of the combinational static logic circuits, sequential circuit design and CMOS dynamic circuits. Finally, the book examines semiconductor memory and the importance of adder and multiplier circuits for the VLSI designer. Primarily intended as a text for the undergraduate and postgraduate students of Electrical and Electronics Engineering, the book would also be of considerable value to designers both beginners and professionals. Key Features: Provides mathematical derivations for both noise margin and logic voltage. Explains all combinational and sequential logics separately. Contains a large number of solved and unsolved problems based on issues related to digital VLSI design.
Embedded Flash Memory For Embedded Systems Technology Design For Sub Systems And Innovations
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Author : Hideto Hidaka
language : en
Publisher: Springer
Release Date : 2017-09-09
Embedded Flash Memory For Embedded Systems Technology Design For Sub Systems And Innovations written by Hideto Hidaka and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-09-09 with Technology & Engineering categories.
This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.