Wide Bandgap Semiconductor Spintronics
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Wide Bandgap Semiconductor Spintronics
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Author : Vladimir Litvinov
language : en
Publisher: CRC Press
Release Date : 2016-03-30
Wide Bandgap Semiconductor Spintronics written by Vladimir Litvinov and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Science categories.
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla
Advances In Wide Bandgap Materials For Semiconductor Spintronics
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Author : Stephen J. Pearton
language : en
Publisher:
Release Date : 2003
Advances In Wide Bandgap Materials For Semiconductor Spintronics written by Stephen J. Pearton and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Wide Bandgap Semiconductor Spintronics
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Author : Vladimir Litvinov
language : en
Publisher: CRC Press
Release Date : 2024-04-26
Wide Bandgap Semiconductor Spintronics written by Vladimir Litvinov and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-04-26 with Technology & Engineering categories.
This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state—an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig–Huges–Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number |C |=2. The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way. Although writings on this topic appear in the current literature, this book is focused on the materials science side of the question, providing a theoretical background for the most common concepts of spin-electron physics. It covers generic topics in spintronics without entering into device specifics since its aim is to give instructions to be used in solving problems of a general and specific nature. It is intended for graduate students and will serve as an introductory course in this specific field of solid state theory and applications.
Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003-07-14
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-07-14 with Technology & Engineering categories.
This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.
Investigaton Of The Suitability Of Wide Bandgap Dilute Magnetic Semiconductors For Spintronics
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Author : Matthew Hartmann Kane
language : en
Publisher:
Release Date : 2007
Investigaton Of The Suitability Of Wide Bandgap Dilute Magnetic Semiconductors For Spintronics written by Matthew Hartmann Kane and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Diluted magnetic semiconductors categories.
New semiconductor materials may enable next-generation 'spintronic' devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality materials in both of these wide bandgap materials systems. ZnMnO and ZnCoO single crystals have been grown by a modified melt growth technique. X-ray diffraction was used to examine the structural quality and demonstrate the single crystal character of these devices. Substitutional transition metal incorporation has been verified by optical transmission and electron paramagnetic resonance measurements. No indications of ferromagnetic hysteresis are observed from the bulk single crystal samples, and temperature dependent magnetization studies demonstrate a dominant antiferromagnetic exchange interaction. Efforts to introduce ferromagnetic ordering were only successful through processing techniques which significantly degraded the material quality. GaMnN thin films were grown by metalorganic chemical vapor deposition. Good crystalline quality and a consistent growth mode with Mn incorporation were verified by several independent characterization techniques. Substitutional incorporation of Mn on the Ga lattice site was confirmed by electron paramagnetic resonance. Mn acted as a deep acceptor in GaN. Nevertheless, ferromagnetic hysteresis was observed in the GaMnN films. The apparent strength of the magnetization correlated with the relative ratio of trivalent to divalent Mn. Valence state control through codoping with additional donors such as silicon was observed. Additional studies on GaFeN also showed a magnetic hysteresis. A comparison with implanted samples showed that the common origin to the apparent strong ferromagnetic hysteresis related to contribution from Mn substitutional ions. The observed magnetic hysteresis is due to the formation of Mn-rich regions during the growth process. This work demonstrated that the original intrinsic models for room temperature ferromagnetism in the wide bandgap semiconductors do not hold and the room temperature ferromagnetism in these materials results from extrinsic contributions.
Rare Earth And Transition Metal Doping Of Semiconductor Materials
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Author : Volkmar Dierolf
language : en
Publisher: Woodhead Publishing
Release Date : 2016-01-23
Rare Earth And Transition Metal Doping Of Semiconductor Materials written by Volkmar Dierolf and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-01-23 with Science categories.
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Semiconductor Spintronics
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Author : Stefano Spezia
language : en
Publisher: Arcler Press
Release Date : 2017-11
Semiconductor Spintronics written by Stefano Spezia and has been published by Arcler Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-11 with categories.
Spintronics demands precise control of the storage, manipulation, and transfer of electron spin coherence in solid state systems. In particular, the manipulation of spins in semiconductor materials has become an active area of investigation, where the two main challenges are the enhancement of the electron spin coherence times and the development of spin manipulation techniques that do not compromise the spin lifetime.The book begins with a brief historical introduction about the discover of phenomena of both the giant magnetoresistance and the tunneling magnetoresistance, followed by discussions on the importance of electron spin in semiconductor applications. Moreover, the concepts of spin coherence and spin-coupling are introduced. Section 1 focuses on the properties of dilute magnetic semiconductors and ferromagnetic semiconductors, where in particular, the effect of electric field, a first-principles study and hybrid ferromagnet-semiconductor nanostructures are considered. Section 2 discusses of Rashba/Dresselhaus effects and optical responses of electron spins in semiconductors, with special deepening about the probing of spin splittings by photogalvanic spectroscopy, and electron spin detection by magneto-optical Kerr microscopy. Section 3 present recent works about dynamics, manipulation and transport of spin-polarized electron in magnetic wide-bandgap semiconductors, in III-V semiconductor low dimensional structures and in carbon nanotubes.
Nitride Wide Bandgap Semiconductor Material And Electronic Devices
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Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03
Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Semiconductor Spintronics
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Author : Jianbai Xia
language : en
Publisher: World Scientific
Release Date : 2012
Semiconductor Spintronics written by Jianbai Xia and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Science categories.
Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors'' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.a
Wide Bandgap Semiconductor Electronics And Devices
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Author : Uttam Singisetti
language : en
Publisher: World Scientific
Release Date : 2019-12-10
Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-10 with Technology & Engineering categories.
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.