Yield Improvement Of Chemical Mechanical Planarization Processes
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Yield Improvement Of Chemical Mechanical Planarization Processes
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Author : Sutee Eamkajornsiri
language : en
Publisher:
Release Date : 2005
Yield Improvement Of Chemical Mechanical Planarization Processes written by Sutee Eamkajornsiri and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. High and reliable wafer yield is critical in the CMP process; it is dependent upon uniformity of material removal rate across the entire wafer. The focus on this research is the development of control algorithm for CMP process. Wafer-scale and die-scale models are the two scales used in this study. To achieve improvement in wafer yield, three control strategies are formulated with greedy algorithm, method heuristic and non-linear programming in this wafer-scale. The simulation results show that average wafer yield from genetic algorithm is improved, compared to greedy algorithm. Moreover, average wafer yield from non-linear programming is also improved, compared to greedy algorithm. At die-scale, a comprehensive control algorithm is developed based on the MRR equations with interface pressure as a control parameter. The interface pressure is varied spatially and/or temporally across the die. In this concept, three control strategies are developed and studied. The strategies are included spatial pressure control, spatial and temporal pressure control, and look-ahead scheduled pressure control. The simulation results of these three strategies show improvement in the upper surface uniformity; however, look-ahead scheduled pressure control seems to be the promising algorithm.
Yield Improvement In Chemical Mechanical Planarization Via Material Removal Variation On A Surface
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Author : Muthukkumar Kadavasal Sivaraman
language : en
Publisher:
Release Date : 2005
Yield Improvement In Chemical Mechanical Planarization Via Material Removal Variation On A Surface written by Muthukkumar Kadavasal Sivaraman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Chemical Mechanical Planarization is one of the most required semiconductor processing modules used in fabrication facilities world wide. Among various surface material removal processes, CMP process is primed for its ability to obtain both local and global planarity on a given surface. The model developed by Fu and Chandra et al, calculates the dishing height based on MRR equations. The model provides a way for step by step material removal based on proportionality parameters like interface pressure, table speed and pattern density. The thesis provides a complete chart for developing a control mechanism for CMP process. The thesis bifurcate the approach into Die scale and Wafer Scale. In die scale, a comprehensive control algorithm is developed based on the MRR equations with pressure and velocity as the control parameter. The model establishes a control over the step height uniformity and upper surface uniformity in both uniform pattern density and varying pattern density surfaces. At wafer scale, an analytical model that relates wafer-pad interface pressure and carrier loading is explained and based on that a FEM analysis is carried out to study the impact of non uniform loading on wafer-pad interface. Both the die scale and wafer models, paved way for developing an integrated control flow chart that can have an impact on the wafer surface at both die scale and wafer scales at the same time. Although, a chart or flow map with necessary models and simulations are in place, to put the entire control mechanism work in a realistic environment there are many other requirements. Like a full fledged pixel or zonal controller should be developed and large scale experimental analysis should be performed based on real time data from manufacturing units.
Yield Improvement In Chemical Mechanical Polishing Process Investigation Of Wafer Scale
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Author : Sutee Eamkajornsiri
language : en
Publisher:
Release Date : 2002
Yield Improvement In Chemical Mechanical Polishing Process Investigation Of Wafer Scale written by Sutee Eamkajornsiri and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during the fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. CMP consists of a chemical process and a mechanical process being performed together to reduce height variation across a wafer. High and reliable wafer yield, which is dependent upon uniformity of the material removal rate across the entire wafer, is of critical importance in the CMP process. In this thesis, the wafer pad contact is modeled as the indentation of a rigid indenter on an elastic half-space. The model predictions are first verified against experimental observations. Simulation results for wafer yield under open loop processing conditions are presented. Wafer curvature is identified as a key design variable influencing the spatial distribution of the material removal rate. The load control, the curvature control, the combined curvature and load strategies are investigated for improving the wafer yield. It utilizes an objective function based on minimizing a moment function that represents the wafer curvature and the height of the oxide layer left for material removal. Simulation results indicate that curvature control can improve wafer yield significantly, and is more effective that just the load control.
Advances In Chemical Mechanical Planarization Cmp
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Author : Babu Suryadevara
language : en
Publisher: Woodhead Publishing
Release Date : 2021-09-10
Advances In Chemical Mechanical Planarization Cmp written by Babu Suryadevara and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-10 with Technology & Engineering categories.
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Process Optimization And Consumable Development For Chemical Mechanical Planarization Cmp Processes
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Author : Subrahmanya R. Mudhivarthi
language : en
Publisher:
Release Date : 2007
Process Optimization And Consumable Development For Chemical Mechanical Planarization Cmp Processes written by Subrahmanya R. Mudhivarthi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
ABSTRACT: Chemical Mechanical Planarization (CMP) is one of the most critical processing steps that enables fabrication of multilevel interconnects. The success of CMP process is limited by the implementation of an optimized process and reduction of process generated defects along with post CMP surface characteristics such as dishing and erosion. This thesis investigates to identify various sources of defects and studies the effect of factors that can be used to optimize the process. The major contributions of this work are: Understanding the effect of temperature rise on surface tribology, electrochemistry and post CMP pattern effects during the CMP process; investigating the effect of pad conditioning temperature and slurry flow rate on tribology and post CMP characteristics; development of novel slurries using polymer hybrid particles and improvement in slurry metrology to reduce surface damage during CMP. From the current research, it was shown that the effect of temperature on CMP tribology is predominantly affected by the polishing parameters and the polishing pad characteristics more than the chemical nature of the slurry. The effect of temperature is minimal on the resulting surface roughness but the with-in die non-uniformity is significantly affected by the temperature at the interface. Secondly, in this research it was shown that the effectiveness and aggressiveness of the pad conditioning process is highly influenced by the conditioning temperature. This aspect can be utilized to optimize the parameters for the pad conditioning process. Further, post CMP characteristics such as dishing, erosion and metal loss on patterned samples were shown to decrease with increase in slurry flow rate. This research then concentrates on the development of novel low defect slurry using polymer hybrid abrasive particles. Several varieties of surface functionalized polymer particles were employed to make oxide CMP slurries. These novel slurries proved to be potential candidates to reduce surface damage during CMP as they resulted in low coefficient of friction and much less surface scratches as compared to conventional abrasives. Thus, this research helps to reduce defects and non-planarity issues during CMP process thereby improving yield and reducing the cost of ownership.
Chemical Mechanical Planarization In Ic Device Manufacturing Iii
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Author : Robert Leon Opila
language : en
Publisher: The Electrochemical Society
Release Date : 2000
Chemical Mechanical Planarization In Ic Device Manufacturing Iii written by Robert Leon Opila and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.
This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).
Chemical Mechanical Planarization Vi
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Author : Sudipta Seal
language : en
Publisher: The Electrochemical Society
Release Date : 2003
Chemical Mechanical Planarization Vi written by Sudipta Seal and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
Synergy Between Chemical Dissolution And Mechanical Abrasion During Chemical Mechanical Polishing Of Copper
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Author : Wei Che
language : en
Publisher:
Release Date : 2005
Synergy Between Chemical Dissolution And Mechanical Abrasion During Chemical Mechanical Polishing Of Copper written by Wei Che and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Chemical mechanical planarization (CMP) is becoming a promising mainstream semiconductor processing method because of its demonstrated capability to achieve better local and global planarization for various materials. However, the CMP process is influenced by a set of factors, which lead to a poor understanding of the material removal mechanisms (MRMs) and inhibits the migratability of the lab-scale experiments to industrial practice. This work focuses on the synergistic effects between chemical dissolution and mechanical abrasion to understand the MRMs during CMP. Initial in-situ wear test in chemically active slurry showed an increased material removal rate (MRR) relative to dry wear tests. To understand the synergistic effects, two plausible MRMs; (i) chemical dissolution enhanced mechanical abrasion and (ii) mechanical abrasion accelerated chemical dissolution, were investigated. In addition, a phenomenological MRR model based on scratch-intersections was formulated to understand the role of consumables and the process parameters. For mechanism I, a combined experimental and modeling technique was devised to understand the mechanical properties of the soft layer formed on the surface due to chemical exposure in CMP. The developed approaches utilized nano-scratch tests, nano-dynamic mechanical analysis (DMA) tests, the limit analysis solution of surface plowing under a spherical traveling indenter, and finite element simulation to deconvolute the soft layer thickness, hardness and elastic modulus. For mechanism II, it is found that the residual stress caused by the mechanical wear enhances the chemical etching rate, as manifested by an increase in wear depth. It is also found that the roughness with wavelength above a critical value grows while roughness of lower wavelength decays during etching, in which an established fact for stress-enhanced chemical dissolution is used. The developed understanding would enable understanding the root causes of defect generation mechanism and render remedies for yield improvements. The proposed models, through their mechanistic description, will facilitate an exploration of the design space and identification of realistic CMP process domains, including: (i) particle shape, size and concentration; (ii) adapting slurry chemistry for required rates of chemical dissolution and mechanical abrasion; and (iii) selecting pads with the proper surface morphology and stiffness.
Proceedings Of The First International Symposium On Chemical Mechanical Planarization
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Author : Iqbal Ali
language : en
Publisher: The Electrochemical Society
Release Date : 1997
Proceedings Of The First International Symposium On Chemical Mechanical Planarization written by Iqbal Ali and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
Abrasive For Chemical Mechanical Polishing
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Author : Hong-jin Kim
language : en
Publisher:
Release Date : 2018
Abrasive For Chemical Mechanical Polishing written by Hong-jin Kim and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Technology categories.
Chemical mechanical polishing (CMP) is one of the most essential processes in semiconductor manufacturing. Its importance becomes highly underscored at the advanced device toward sub 14 nm scaling. The fundamental mechanism of CMP is to create soften surface layer by chemical reaction and then, mechanical force by abrasive particles remove soften layer. The role of CMP is not only material removal, but also planarization, surface smoothening, uniformity control, defect reduction and more. Moreover, semiconductor yield enhancement is sensitively influenced by CMP processing. Surface scratching, which is generated by CMP in nature, is considered as 'killer defect' in semiconductor manufacturing. Hence, to achieve proper CMP performance without surface scratching, understanding and development of abrasive particles are crucially important. In this chapter, CMP fundamentals, applications and challenges associated with abrasive particle technology including synthesis (up to nanoparticle scale), tribochemical reaction, abrasive surface zeta potential behavior, particle size and its distribution will be discussed.