3d Integration Of Resistive Switching Memory
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3d Integration Of Resistive Switching Memory
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Author : Qing Luo
language : en
Publisher: CRC Press
Release Date : 2023-04-13
3d Integration Of Resistive Switching Memory written by Qing Luo and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-04-13 with Technology & Engineering categories.
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
3d Integration Of Resistive Switching Memory
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Author : Qing Luo
language : en
Publisher:
Release Date : 2023
3d Integration Of Resistive Switching Memory written by Qing Luo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023 with Electronic books categories.
"This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--
Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Springer Nature
Release Date : 2022-06-01
Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Resistive Switching Oxide Materials Mechanisms Devices And Operations
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Author : Jennifer Rupp
language : en
Publisher: Springer Nature
Release Date : 2021-10-15
Resistive Switching Oxide Materials Mechanisms Devices And Operations written by Jennifer Rupp and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-15 with Technology & Engineering categories.
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Advances In 3d Integrated Circuits And Systems
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Author : Yu Hao
language : en
Publisher: World Scientific
Release Date : 2015-08-28
Advances In 3d Integrated Circuits And Systems written by Yu Hao and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-28 with Technology & Engineering categories.
3D integration is an emerging technology for the design of many-core microprocessors and memory integration. This book, Advances in 3D Integrated Circuits and Systems, is written to help readers understand 3D integrated circuits in three stages: device basics, system level management, and real designs.Contents presented in this book include fabrication techniques for 3D TSV and 2.5D TSI; device modeling; physical designs; thermal, power and I/O management; and 3D designs of sensors, I/Os, multi-core processors, and memory.Advanced undergraduates, graduate students, researchers and engineers may find this text useful for understanding the many challenges faced in the development and building of 3D integrated circuits and systems.
Resistive Switching
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Author : Daniele Ielmini
language : en
Publisher: John Wiley & Sons
Release Date : 2015-12-23
Resistive Switching written by Daniele Ielmini and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-23 with Technology & Engineering categories.
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Design Of 3d Integrated Circuits And Systems
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Author : Rohit Sharma
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Design Of 3d Integrated Circuits And Systems written by Rohit Sharma and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Three-dimensional (3D) integration of microsystems and subsystems has become essential to the future of semiconductor technology development. 3D integration requires a greater understanding of several interconnected systems stacked over each other. While this vertical growth profoundly increases the system functionality, it also exponentially increases the design complexity. Design of 3D Integrated Circuits and Systems tackles all aspects of 3D integration, including 3D circuit and system design, new processes and simulation techniques, alternative communication schemes for 3D circuits and systems, application of novel materials for 3D systems, and the thermal challenges to restrict power dissipation and improve performance of 3D systems. Containing contributions from experts in industry as well as academia, this authoritative text: Illustrates different 3D integration approaches, such as die-to-die, die-to-wafer, and wafer-to-wafer Discusses the use of interposer technology and the role of Through-Silicon Vias (TSVs) Presents the latest improvements in three major fields of thermal management for multiprocessor systems-on-chip (MPSoCs) Explores ThruChip Interface (TCI), NAND flash memory stacking, and emerging applications Describes large-scale integration testing and state-of-the-art low-power testing solutions Complete with experimental results of chip-level 3D integration schemes tested at IBM and case studies on advanced complementary metal–oxide–semiconductor (CMOS) integration for 3D integrated circuits (ICs), Design of 3D Integrated Circuits and Systems is a practical reference that not only covers a wealth of design issues encountered in 3D integration but also demonstrates their impact on the efficiency of 3D systems.
Emerging Resistive Switching Memories
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Author : Jianyong Ouyang
language : en
Publisher: Springer
Release Date : 2016-07-04
Emerging Resistive Switching Memories written by Jianyong Ouyang and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-07-04 with Technology & Engineering categories.
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Advances In Non Volatile Memory And Storage Technology
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Author : Yoshio Nishi
language : en
Publisher: Woodhead Publishing
Release Date : 2019-06-15
Advances In Non Volatile Memory And Storage Technology written by Yoshio Nishi and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-15 with Science categories.
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.