Advanced Physical Models For Silicon Device Simulation
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Advanced Physical Models For Silicon Device Simulation
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Author : Andreas Schenk
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Advanced Physical Models For Silicon Device Simulation written by Andreas Schenk and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
Advanced Physical Models For Silicon Device Simulation
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Author : Andreas Schenk
language : en
Publisher: Springer Science & Business Media
Release Date : 1998-07-07
Advanced Physical Models For Silicon Device Simulation written by Andreas Schenk and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-07-07 with Technology & Engineering categories.
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Simulation Of Semiconductor Processes And Devices 2001
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Author : Dimitris Tsoukalas
language : en
Publisher: Springer Science & Business Media
Release Date : 2001-08-21
Simulation Of Semiconductor Processes And Devices 2001 written by Dimitris Tsoukalas and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-08-21 with Computers categories.
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Hierarchical Device Simulation
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Author : Christoph Jungemann
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Hierarchical Device Simulation written by Christoph Jungemann and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.
Simulation Of Semiconductor Processes And Devices 1998
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Author : Kristin De Meyer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Simulation Of Semiconductor Processes And Devices 1998 written by Kristin De Meyer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.
Simulation Of Semiconductor Processes And Devices 2004
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Author : Gerhard Wachutka
language : en
Publisher: Springer Science & Business Media
Release Date : 2004-08-23
Simulation Of Semiconductor Processes And Devices 2004 written by Gerhard Wachutka and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-08-23 with Computers categories.
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Scientific Computing In Electrical Engineering
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Author : Angelo Marcello Anile
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-01-10
Scientific Computing In Electrical Engineering written by Angelo Marcello Anile and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-01-10 with Technology & Engineering categories.
This book is a collection of papers presented at the last Scientific Computing in Electrical Engineering (SCEE) Conference, held in Sicily, in 2004. The series of SCEE conferences aims at addressing mathematical problems which have a relevancy to industry. The areas covered at SCEE-2004 were: Electromagnetism, Circuit Simulation, Coupled Problems and General mathematical and computational methods.
Nistir
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Author :
language : en
Publisher:
Release Date : 2001
Nistir written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Charge Transport In Low Dimensional Semiconductor Structures
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Author : Vito Dario Camiola
language : en
Publisher: Springer Nature
Release Date : 2020-03-02
Charge Transport In Low Dimensional Semiconductor Structures written by Vito Dario Camiola and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-02 with Science categories.
This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.