Advanced Spice Model For Gan Hemts Asm Hemt
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Advanced Spice Model For Gan Hemts Asm Hemt
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Author : Sourabh Khandelwal
language : en
Publisher: Springer Nature
Release Date : 2022-01-01
Advanced Spice Model For Gan Hemts Asm Hemt written by Sourabh Khandelwal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-01 with Technology & Engineering categories.
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
Gan Transistor Modeling For Rf And Power Electronics
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Author : Yogesh Singh Chauhan
language : en
Publisher: Elsevier
Release Date : 2024-05-31
Gan Transistor Modeling For Rf And Power Electronics written by Yogesh Singh Chauhan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-31 with Technology & Engineering categories.
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
New Materials And Devices Enabling 5g Applications And Beyond
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Author : Nadine Collaert
language : en
Publisher: Elsevier
Release Date : 2024-01-24
New Materials And Devices Enabling 5g Applications And Beyond written by Nadine Collaert and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-01-24 with Technology & Engineering categories.
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) Focuses on mm-wave frequencies up to the terahertz regime
Iii Nitride Electronic Devices
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Author : Rongming Chu
language : en
Publisher: Academic Press
Release Date : 2019-10
Iii Nitride Electronic Devices written by Rongming Chu and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10 with Electronic apparatus and appliances categories.
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Parameter Extraction And Complex Nonlinear Transistor Models
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Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31
Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Advanced Field Effect Transistors
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Author : Dharmendra Singh Yadav
language : en
Publisher: CRC Press
Release Date : 2023-12-18
Advanced Field Effect Transistors written by Dharmendra Singh Yadav and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-18 with Technology & Engineering categories.
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Mosfet Models For Spice Simulation
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Author : William Liu
language : en
Publisher: Wiley-IEEE Press
Release Date : 2001-02-21
Mosfet Models For Spice Simulation written by William Liu and has been published by Wiley-IEEE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-02-21 with Technology & Engineering categories.
An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site
Compact Modeling
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Author : Gennady Gildenblat
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-06-22
Compact Modeling written by Gennady Gildenblat and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-22 with Technology & Engineering categories.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
The Physics Of Semiconductor Devices
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Author : Rajendra Singh
language : en
Publisher: Springer Nature
Release Date :
The Physics Of Semiconductor Devices written by Rajendra Singh and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.