Carrier Mobility In Advanced Channel Materials Using Alternative Gate Dielectrics
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Carrier Mobility In Advanced Channel Materials Using Alternative Gate Dielectrics
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Author : Eylem Durgun Özben
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014-03-20
Carrier Mobility In Advanced Channel Materials Using Alternative Gate Dielectrics written by Eylem Durgun Özben and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-20 with categories.
Resistive Switching In Zro2 Based Metal Oxide Metal Structures
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Author : Irina Kärkkänen
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Resistive Switching In Zro2 Based Metal Oxide Metal Structures written by Irina Kärkkänen and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
High K Gate Dielectrics For Cmos Technology
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Author : Gang He
language : en
Publisher: John Wiley & Sons
Release Date : 2012-08-10
High K Gate Dielectrics For Cmos Technology written by Gang He and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-10 with Technology & Engineering categories.
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Proceedings Of International Conference On Vlsi Communication Advanced Devices Signals Systems And Networking Vcasan 2013
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Author : Veena S. Chakravarthi
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-07-10
Proceedings Of International Conference On Vlsi Communication Advanced Devices Signals Systems And Networking Vcasan 2013 written by Veena S. Chakravarthi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-07-10 with Technology & Engineering categories.
This book is a collection of papers presented by renowned researchers, keynote speakers, and academicians in the International Conference on VLSI, Communication, Analog Designs, Signals & Systems and Networking (VCASAN-2013), organized by B.N.M. Institute of Technology, Bangalore, India during July 17–19, 2013. The book provides global trends in cutting-edge technologies in electronics and communication engineering. The content of the book is useful to engineers, researchers, and academicians as well as industry professionals.
Micro Spectroscopic Investigation Of Valence Change Processes In Resistive Switching Srtio3 Thin Films
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Author : Annemarie Köhl
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Micro Spectroscopic Investigation Of Valence Change Processes In Resistive Switching Srtio3 Thin Films written by Annemarie Köhl and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos
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Author :
language : en
Publisher:
Release Date : 2005
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Oxygen Transport In Thin Oxide Films At High Field Strength
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Author : Dieter Weber
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Oxygen Transport In Thin Oxide Films At High Field Strength written by Dieter Weber and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Ionic transport in nanostructures at high eld strength has recently gained attention, because novel types of computer memory with potentially superior properties rely on such phenomena. The applied voltages are only moderate, but they drop over the distance of a few nanometers and lead to extreme eld strengths in the MV/cm region. Such strong elds contributes signi cantly to the activation energy for ionic jump processes. This leads to an exponential increase of transport speed with voltage. Conventional high-temperature ionic conduction, in contrast, only relies on thermal activation for such jumps. In this thesis, the transport of minute amounts of oxygen through a thin dielectric layer sandwiched between two thin conducting oxide electrodes was detected semiquantitatively by measuring the conductance change of the electrodes after applying a current through the dielectric layer. The relative conductance change G=G as a function of current I and duration t follows over several orders of magnitude a simple, empirical law of the form G=G = CIAtB with t parameters C, A and B; A;B 2 [0; 1]. This empirical law can be linked to a predicted exponential increase of the transport speed with voltage at high eld strength. The behavior in the time domain can be explained with a spectrum of relaxation processes, similar to the relaxation of dielectrics. The in uence of temperature on the transport is strong, but still much lower than expected. This contradicts a commonly used law for high- eld ionic transport. The di erent oxide layers are epitaxial with thicknesses between 5 and 70 nm. First large-scale test samples were fabricated using shadow masks. The general behavior of such devices was studied extensively. In an attempt to achieve quantitative results with defect-free, miniaturized devices, a lithographic manufacturing process that uses repeated steps of epitaxial deposition and structuring of the layers was developed. It employs newly developed and optimized wet chemical etching processes for the conducting electrodes. First high-quality devices could be manufactured with this process and con rmed that such devices su er less from parasitic e ects. The lithographically structured samples were made from di erent materials. The results from the rst test samples and the lithographically structured samples are therefore not directly comparable. They do exhibit however in principle the same behavior. Further investigation of such lithographically structured samples appears promising
High K Gate Dielectric Materials
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Author : Niladri Pratap Maity
language : en
Publisher: CRC Press
Release Date : 2020-12-17
High K Gate Dielectric Materials written by Niladri Pratap Maity and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-12-17 with Science categories.
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10
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Author : R. Ekwal Sah
language : en
Publisher: The Electrochemical Society
Release Date : 2009-05
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10 written by R. Ekwal Sah and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-05 with Science categories.
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 2
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Author : Fred Roozeboom
language : en
Publisher: The Electrochemical Society
Release Date : 2006
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 2 written by Fred Roozeboom and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.