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Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors


Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors
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Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors


Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors
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Author : Nick Gengming Tao
language : en
Publisher:
Release Date : 2006

Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Bipolar transisitors categories.


In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.



Analysis And Simulation Of Heterostructure Devices


Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.



Dissertation Abstracts International


Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 2007

Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Dissertations, Academic categories.




Sige Heterojunction Bipolar Transistors


Sige Heterojunction Bipolar Transistors
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Author : Peter Ashburn
language : en
Publisher: John Wiley & Sons
Release Date : 2004-02-06

Sige Heterojunction Bipolar Transistors written by Peter Ashburn and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-02-06 with Technology & Engineering categories.


SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.



Scientific And Technical Aerospace Reports


Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995

Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.




The Engineering Index Annual


The Engineering Index Annual
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Author :
language : en
Publisher:
Release Date : 1992

The Engineering Index Annual written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Engineering categories.


Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.



Fighting Back The Von Neumann Bottleneck With Small And Large Scale Vector Microprocessors


Fighting Back The Von Neumann Bottleneck With Small And Large Scale Vector Microprocessors
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Author : Matheus Cavalcante
language : en
Publisher: BoD – Books on Demand
Release Date : 2023-08-24

Fighting Back The Von Neumann Bottleneck With Small And Large Scale Vector Microprocessors written by Matheus Cavalcante and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-08-24 with categories.


In his seminal Turing Award Lecture, Backus discussed the issues stemming from the word-at-a-time style of programming inherited from the von Neumann computer. More than forty years later, computer architects must be creative to amortize the von Neumann Bottleneck (VNB) associated with fetching and decoding instructions which only keep the datapath busy for a very short period of time. In particular, vector processors promise to be one of the most efficient architectures to tackle the VNB, by amortizing the energy overhead of instruction fetching and decoding over several chunks of data. This work explores vector processing as an option to build small and efficient processing elements for large-scale clusters of cores sharing access to tightly-coupled L1 memory



Chemical Abstracts


Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002

Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.




Fabrication Of Gaas Devices


Fabrication Of Gaas Devices
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Author : Albert G. Baca
language : en
Publisher: IET
Release Date : 2005-09

Fabrication Of Gaas Devices written by Albert G. Baca and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-09 with Technology & Engineering categories.


This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.



Intelligent Computing Techniques For Smart Energy Systems


Intelligent Computing Techniques For Smart Energy Systems
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Author : Akhtar Kalam
language : en
Publisher: Springer Nature
Release Date : 2019-12-16

Intelligent Computing Techniques For Smart Energy Systems written by Akhtar Kalam and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-16 with Technology & Engineering categories.


The book compiles the research works related to smart solutions concept in context to smart energy systems, maintaining electrical grid discipline and resiliency, computational collective intelligence consisted of interaction between smart devices, smart environments and smart interactions, as well as information technology support for such areas. It includes high-quality papers presented in the International Conference on Intelligent Computing Techniques for Smart Energy Systems organized by Manipal University Jaipur. This book will motivate scholars to work in these areas. The book also prophesies their approach to be used for the business and the humanitarian technology development as research proposal to various government organizations for funding approval.