Defect Structures On Growth Substrates
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Defect Structures On Growth Substrates
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Author : Albert S. Sun
language : en
Publisher:
Release Date : 2000
Defect Structures On Growth Substrates written by Albert S. Sun and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Defect Structures And Growth Mechanisms Of B12as2 Epilayers Grown On 6h Sic And 15r Sic Substrates
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Author : Hui Chen (Ph. D.)
language : en
Publisher:
Release Date : 2008
Defect Structures And Growth Mechanisms Of B12as2 Epilayers Grown On 6h Sic And 15r Sic Substrates written by Hui Chen (Ph. D.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Growth And Defect Structures
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Author : H. C. Freyhardt
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Growth And Defect Structures written by H. C. Freyhardt and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Polytypic crystals of semiconductors, dielectrics and magnetic materials attract an increasing attention in science and technology. On one hand, the phenomenon of polyty pism is one of the fundamental problems of solid-state physics; its solution would make it possible to elucidate- the problem of the interconnection of different structures and intraatomic forces acting in crystals. On the other hand, the polytypic difference in crystals is most strongly expressed in electro-physical properties, which makes their application promising, mainly in semiconductor electronics. Thus, the difficulties of pro ducing modulated structures in polytypic crystals can be overcome since these crystals form a class of one-dimensional natural superlattices. At present it has become clear that polytypism in crystals and compounds is the rule rather than an exception and it is determined by the conditions of their synthesis. This phenomenon seems to be rather widespread in nature and fundamental for crystal forma tion. H polytypism was recently thought to be but a specific structural feature of a few substances such as SiC, ZnS, CdI , etc. , by now this phenomenon has been discovered in 2 v an increasing range of crystalline substances, for example, in silicon, diamond, AIIIB , VI AIIB , AIBVII compounds, in ternary semiconducting compounds, metals, silicates, perovskites, mica, organic crystals. The more accurately the structural studies are per formed, the greater is the number of crystals of various substances found to exhibit the phenomenon of polytypism. Recently, excellent surveys have systematized our knowledge of polytypism.
Growth And Defect Structures
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Author : V. V. Osiko
language : en
Publisher: Springer
Release Date : 1984-11
Growth And Defect Structures written by V. V. Osiko and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984-11 with Science categories.
With contributions by numerous experts
Defect Engineering Through Substrate Design
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Author :
language : en
Publisher:
Release Date : 2005
Defect Engineering Through Substrate Design written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
A comprehensive program in the control of extended defects associated with the growth of large lattice-mismatched materials was undertaken. This program was aimed at understanding the interaction of extended defects with stress that is intentionally introduced into a substrate structure and develop processes for the growth of large lattice mismatched materials with a substantially reduced defect density over large substrate areas. The narrow band gap semiconductors, GaSb and InAs, were used in these studies. The application of a lateral epitaxial overgrowth technique (LEO) led to a dramatic and unexpected reduction in defect density when the mask openings are restricted to less than 1 micrometer. Our measurements indicate an appropriately engineered substrate can lead to dramatic changes in the defect structure leading to the isolation of lattice-mismatched based dislocations to the interface region leading to strong reduction in the dislocation density in the overlying layers. A detailed characterization of the defect structure demonstrated defect reduction in the LEO substrates.
Defect Structure And Properties Of Nanomaterials
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Author : J Gubicza
language : en
Publisher: Woodhead Publishing
Release Date : 2017-03-05
Defect Structure And Properties Of Nanomaterials written by J Gubicza and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-03-05 with Technology & Engineering categories.
Defect Structure and Properties of Nanomaterials: Second and Extended Edition covers a wide range of nanomaterials including metals, alloys, ceramics, diamond, carbon nanotubes, and their composites. This new edition is fully revised and updated, covering important advances that have taken place in recent years. Nanostructured materials exhibit unique mechanical and physical properties compared with their coarse-grained counterparts, therefore these materials are currently a major focus in materials science. The production methods of nanomaterials affect the lattice defect structure (vacancies, dislocations, disclinations, stacking faults, twins, and grain boundaries) that has a major influence on their mechanical and physical properties. In this book, the production routes of nanomaterials are described in detail, and the relationships between the processing conditions and the resultant defect structure, as well as the defect-related properties (e.g. mechanical behavior, electrical resistance, diffusion, corrosion resistance, thermal stability, hydrogen storage capability, etc.) are reviewed. In particular, new processing methods of nanomaterials are described in the chapter dealing with the manufacturing procedures of nanostructured materials. New chapters on (i) the experimental methods for the study of lattice defects, (ii) the defect structure in nanodisperse particles, and (iii) the influence of lattice defects on electrical, corrosion, and diffusion properties are included, to further enhance what has become a leading reference for engineering, physics, and materials science audiences. Provides a detailed overview of processing methods, defect structure, and defect-related mechanical and physical properties of nanomaterials Covers a wide range of nanomaterials including metals, alloys, ceramics, diamond, carbon nanotubes, and their composites Includes new chapters covering recent advances in both processing techniques and methods for the study of lattice defects Provides valuable information that will help materials scientists and engineers highlight lattice defects and the related mechanical and physical properties
Phase Stability And Defect Structures In Ti Al N Hard Coatings
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Author : Katherine M. Calamba
language : en
Publisher: Linköping University Electronic Press
Release Date : 2019-05-27
Phase Stability And Defect Structures In Ti Al N Hard Coatings written by Katherine M. Calamba and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-27 with categories.
This study highlights the role of nitrogen vacancies and defect structures in engineering hard coatings with enhanced phase stability and mechanical properties for high temperature applications. Titanium aluminum nitride (Ti,Al)N based materials in the form of thin coatings has remained as an outstanding choice for protection of metal cutting tools due to its superior oxidation resistance and high-temperature wear resistance. High-temperature spinodal decomposition of metastable (Ti,Al)N into coherent c-TiN and c-AlN nm-sized domains results in high hardness at elevated temperatures. Even higher thermal input leads to transformation of c-AlN to w-AlN, which is detrimental to the mechanical properties of the coating. One mean to delay this transformation is to introduce nitrogen vacancies. In this thesis, I show that by combining a reduction of the overall N-content of the c-(Ti,Al)Ny (y < 1) coating with a low substrate bias voltage during cathodic arc deposition an even more pronounced delay of the c-AlN to w-AlN phase transformation is achieved. Under such condition, age hardening is retained until 1100 ?C, which is the highest temperature reported for (Ti,Al)N films. During cutting operations, the wear mechanism of the cathodicarc-deposited c-(Ti0.52Al0.48)Ny with N-contents of y = 0.92, 0.87, and 0.75 films are influenced by the interplay of nitrogen vacancies, microstructure, and chemical reactions with the workpiece material. The y = 0.75 coating contains the highest number of macroparticles and has an inhomogeneous microstructure after machining, which lower its flank and crater wear resistance. Age hardening of the y = 0.92 sample causes its superior flank wear resistance while the dense structure of the y = 0.87 sample prevents chemical wear that results in excellent crater wear resistance. Heteroepitaxial c-(Ti1-x,Alx)Ny (y = 0.92, 0.79, and0.67) films were grown on MgO(001) and (111) substrates using magnetron putter deposition to examine the details of their defect structures during spinodal decomposition. At 900 ?C, the films decompose to form coherent c-AlN- and c-TiN- rich domains with elongated shape along the elastically soft <001> direction. Deformation maps show that most strains occur near the interface of the segregated domains and inside the c-TiN domains. Dislocations favorably aggregate in c-TiN rather than c-AlN because the later has stronger directionality of covalent chemical bonds. At elevated temperature, the domain size of (001) and (111)- oriented c-(Ti,Al)Ny films increases with the nitrogen content. This indicates that there is a delay in coarsening due to the presence of more N vacancies in the film. The structural and functional properties (Ti1-x,Alx)Ny are also influenced by its Al content (x). TiN and (Ti1-x,Alx)Ny (y = 1, x = 0.63 and x = 0.77) thin films were grown on MgO(111) substrates using magnetron sputtering technique. Both TiN and Ti0.27Al0.63N films are single crystals with cubic structure. (Ti0.23,Al0.77)N film has epitaxial cubic structure only in the first few atomic layers then it transitions to an epitaxial wurtzite layer, with an orientation relationship of c-(Ti0.23,Al0.77)N(111)[1-10]??w-(Ti0.23,Al0.77)N(0001)[11-20]. The w-(Ti0.23,Al0.77)N shows phase separation of coherent nm-sized domains with varying chemical composition during growth. After annealing at high temperature, the domains in w-(Ti0.23,Al0.77)N have coarsened. The domains in w-(Ti0.23,Al0.77)N are smaller compared to the domains in c-(Ti0.27,Al0.63)N film that has undergone spinodal decomposition. The results that emerged from this thesis are of great importance in the cutting tool industry and also in the microelectronics industry, because the layers examined have properties that are well suited for diffusion barriers.
Defects In Self Catalysed Iii V Nanowires
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Author : James A. Gott
language : en
Publisher: Springer Nature
Release Date : 2022-01-28
Defects In Self Catalysed Iii V Nanowires written by James A. Gott and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-28 with Technology & Engineering categories.
This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
Defects In Nanocrystals
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Author : Sergio Pizzini
language : en
Publisher: CRC Press
Release Date : 2020-05-11
Defects In Nanocrystals written by Sergio Pizzini and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-05-11 with Technology & Engineering categories.
Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.
Theoretical Modeling Of Epitaxial Graphene Growth On The Ir 111 Surface
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Author : Holly Alexandra Tetlow
language : en
Publisher: Springer
Release Date : 2017-10-02
Theoretical Modeling Of Epitaxial Graphene Growth On The Ir 111 Surface written by Holly Alexandra Tetlow and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-02 with Science categories.
One possible method of producing high-quality graphene is to grow it epitaxially; this thesis investigates the mechanisms involved in doing so. It describes how the initial stages of growth on the Ir(111) surface are modelled using both rate equations and kinetic Monte Carlo, based upon nudged elastic band (NEB) calculated reaction energy barriers. The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond. In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation. Small arch-shaped clusters containing four to six C atoms, which may be key in graphene formation, are predicted to be long-lived on the surface. In closing, the healing of single vacancy defects in the graphene/Ir(111) surface is investigated, and attempts to heal said defects using ethylene molecules is simulated with molecular dynamics and NEB calculated energy barriers.