Design And Characterization Of Ferroelectric Negative Capacitance
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Design And Characterization Of Ferroelectric Negative Capacitance
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Author : Korok Chatterjee
language : en
Publisher:
Release Date : 2018
Design And Characterization Of Ferroelectric Negative Capacitance written by Korok Chatterjee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.
Because of the thermal distribution of electrons in a semiconductor, modern transistors cannot be turned on more sharply than 60 mV of gate voltage for an order of magnitude increase in drain current, the so-called ”Boltzmann tyranny.” This results in an inability to reduce supply voltage, increasing power dissipation in advanced complementary metal- oxide-semiconductor (CMOS) technologies, which threatens the continuation of exponential transistor scaling, also known as Moore’s Law. For this reason, there has been a push in the device research community to invent novel steep swing devices. Negative capacitance in ferroelectric materials was proposed in 2008 by Salahuddin and Datta to provide voltage amplification without needing to design a totally new device. A negative gate capacitance would step-up the applied gate voltage at the semiconductor channel, causing the surface potential to rise faster than the gate voltage, lowering the subthreshold slope below 60 mV/decade. In this work, we attempt to characterize the charge-voltage characteristics of ferroelectrics biased into the negative capacitance regime. Although negative capacitance was experimentally demonstrated in 2010, significant challenges have remained to the practical realization of negative capacitance field-effect transistors (FETs). First, we investigate negative capacitance in an isolated ferroelectric capacitor, and show that the negative capacitance states can be directly observed during switching. Careful analysis of the switching dynamics and phase-field modeling show that the signature of negative capacitance arises from the accelerating growth of domain walls, when an increasing volume fraction of the ferroelectric is depolarized. Although this offers insight into the origins of negative capacitance and help to establish its existence scientifically, it does not address the problem of design. A primary concern is the speed of polarization response, which should be on the order of 1 picosecond or less in order to maintain circuit performance. By analyzing the electromagnetic absorption spectrum of hafnium oxide, the primary candidate for CMOS integration, we are able to estimate the intrinsic delay time as being on the order of 270 fs. Next, in order to maximize the amplification and provide adequate margins for hysteresis-free operation, it is necessary to understand how coupling of the ferroelectric material to the interfacial oxide and semiconductor affects its behavior, and to be able to predict what values of negative capacitance will be realized for a certain material and geometry. This is the problem of capacitance matching, which we aim to solve by using the underlying transistor itself as a charge sensor. By calibrating the drain current to the surface potential in reference devices, we may ascertain the characteristics of the ferroelectric in the negative capacitance devices. This is first carried out with an epitaxial ferroelectric capacitor externally connected to the gate of pre-fabricated Fin-FETs. Following this, we describe the development of an in-house fabrication process using silicon-on-insulator substrates, which allows for simple and efficient process flows. Then, we describe the characterization of these devices, including quasistatic and low-frequency current-voltage (I-V) and capacitance voltage (C-V) measurements, a fast pulse-gated I-V measurement, and an excursion into the memory characteristics of our fabricated FETs. Finally, we discuss efforts to build a computational model of our devices from which we can extract the ferroelectric characteristics needed for predictive design.
Negative Capacitance Field Effect Transistors
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Author : Young Suh Song
language : en
Publisher: CRC Press
Release Date : 2023-10-31
Negative Capacitance Field Effect Transistors written by Young Suh Song and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-10-31 with Technology & Engineering categories.
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Negative Capacitance In Ferroelectric Materials
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Author : Michael Hoffmann
language : en
Publisher:
Release Date : 2020
Negative Capacitance In Ferroelectric Materials written by Michael Hoffmann and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
Nanoelectronics Devices Design Materials And Applications Part I
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Author : Gopal Rawat
language : en
Publisher: Bentham Science Publishers
Release Date : 2023-10-31
Nanoelectronics Devices Design Materials And Applications Part I written by Gopal Rawat and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-10-31 with Science categories.
Nanoelectronics Devices: Design, Materials, and Applications provides information about the progress of nanomaterial and nanoelectronic devices and their applications in diverse fields (including semiconductor electronics, biomedical engineering, energy production and agriculture). The book is divided into two parts. The editors have included a blend of basic and advanced information with references to current research. The book is intended as an update for researchers and industry professionals in the field of electronics and nanotechnology. It can also serve as a reference book for students taking advanced courses in electronics and technology. The editors have included MCQs for evaluating the readers’ understanding of the topics covered in the book. Topics covered in Part 1 include basic knowledge on nanoelectronics with examples of testing different device parameters. - The present, past, and future of nanoelectronics, - An introduction to Nanoelectronics and applicability of Moore's law - Transport of charge carrier, electrode, and measurement of device parameters - Fermi level adjustment in junction less transistor, - Non-polar devices and their simulation - The negative capacitance in MOSFET devices - Effect of electrode in the device operation - Second and Sixth group semiconductors, - FinFET principal and future, Electronics and optics integration for fast processing and data communication - Batteryless photo detectors - Solar cell fabrication and applications - Van der Waals assembled nanomaterials
Field Effect Transistors
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Author : P. Suveetha Dhanaselvam
language : en
Publisher: John Wiley & Sons
Release Date : 2025-04-15
Field Effect Transistors written by P. Suveetha Dhanaselvam and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-15 with Technology & Engineering categories.
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field. Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.
Vlsi Design And Test
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Author : Ambika Prasad Shah
language : en
Publisher: Springer Nature
Release Date : 2022-12-16
Vlsi Design And Test written by Ambika Prasad Shah and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-12-16 with Computers categories.
This book constitutes the proceedings of the 26th International Symposium on VLSI Design and Test, VDAT 2022, which took place in Jammu, India, in July 2022. The 32 regular papers and 16 short papers presented in this volume were carefully reviewed and selected from 220 submissions. They were organized in topical sections as follows: Devices and Technology; Sensors; Analog/Mixed Signal; Digital Design; Emerging Technologies and Memory; System Design.
Characterization Of Nanomaterials
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Author : Ehrenfried Zschech
language : en
Publisher: MDPI
Release Date : 2021-09-01
Characterization Of Nanomaterials written by Ehrenfried Zschech and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-01 with Science categories.
This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.
Vlsi Communication And Signal Processing
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Author : R. K. Nagaria
language : en
Publisher: Springer Nature
Release Date : 2023-07-01
Vlsi Communication And Signal Processing written by R. K. Nagaria and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-07-01 with Technology & Engineering categories.
This book covers a variety of topics in Electronics and Communication Engineering, especially in the area of microelectronics and VLSI design, communication systems and networks, and signal and image processing. The content is based on papers presented at the 5th International Conference on VLSI, Communication and Signal Processing (VCAS 2022). The book also discusses the emerging applications of novel tools and techniques in image, video, and multimedia signal processing. This book is useful to students, researchers, and professionals working in the electronics and communication domain.
Fefet Devices Trends Technology And Applications
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Author : Balwinder Raj
language : en
Publisher: John Wiley & Sons
Release Date : 2025-04-09
Fefet Devices Trends Technology And Applications written by Balwinder Raj and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-09 with Technology & Engineering categories.
FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development. This book serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.