Design And Realization Of Bipolar Transistors
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Design And Realization Of Bipolar Transistors
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Author : Peter Ashburn
language : en
Publisher:
Release Date : 1988-08-18
Design And Realization Of Bipolar Transistors written by Peter Ashburn and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988-08-18 with Technology & Engineering categories.
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Design And Realization Of Bipolar Transistors
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Author : Peter Ashburn
language : en
Publisher:
Release Date : 1988-08-18
Design And Realization Of Bipolar Transistors written by Peter Ashburn and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988-08-18 with Technology & Engineering categories.
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Realizing Vertical Bipolar Transistors In A Standard Cmos Technology For The Design Of Low Cost Bicmos Integrated Circuits Microform
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Author : Farshid Rezaei
language : en
Publisher: Library and Archives Canada = Bibliothèque et Archives Canada
Release Date : 2004
Realizing Vertical Bipolar Transistors In A Standard Cmos Technology For The Design Of Low Cost Bicmos Integrated Circuits Microform written by Farshid Rezaei and has been published by Library and Archives Canada = Bibliothèque et Archives Canada this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
This thesis describes the realization of isolated vertical npn transistors in generic CMOS technologies. An improved layout for these parasitic transistors is proposed. The electrical characteristics and modelling of the proposed device are presented. The design, realization, and fabrication of a high-speed open-loop preamplifier using these bipolar transistors are also presented. The preamplifier was found to have more than a 1 GHz bandwidth as well as less than -35 dB THD, as was verified using die-probe measurements. The amplifier achieved 10.4 dB gain and a 0 dBm IIP3. The collector-base and the collector-emitter breakdown voltages are 14.8V and 9V, respectively. The output impedance and noise characteristics are comparatively good. The measured current gains, on the order of 20, are less than what would be preferred, but not excessively so, and the unity-gain frequencies on the order of 4 GHz, are much less than would be the case for a vertical npn in a typical BiCMOS process, but still are adequate for many applications.
Design Of Low Voltage Bipolar Operational Amplifiers
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Author : M. Jeroen Fonderie
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Design Of Low Voltage Bipolar Operational Amplifiers written by M. Jeroen Fonderie and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Design of Low-Voltage Bipolar Operational Amplifiers discusses the sub-circuits necessary to build a low-voltage operational amplifier. These include rail-to-rail input stages, rail-to-rail output stages, intermediate stages, protection circuitry and frequency compensation techniques. Of each of these, various implementations are examined. Furthermore, the book discusses realizations in silicon of the amplifiers. The design and implementation of low-voltage bipolar Operational Amplifiers (OpAmps) is fully presented. A low supply voltage is necessary because the tendency towards chip components of smaller dimensions lowers the breakdown voltage of these components. Further, a low supply voltage is favorable because it enables operation of the OpAmp from just one single battery cell. The bipolar technology is chosen, because it is more suited for operation at low-voltages than the MOS technology. The common-mode input voltage of the OpAmp must be able to have any value that fits within the supply voltage range. Input stages are discussed which are able to realize this at supply voltages down to 1.8 V, as well as down to 1 V. The output voltage of the OpAmp must be able to have any value within the supply voltage range. One of the 1 V output stages that is discussed, the multi-path driven output stage, also has a high bandwidth with a high gain. In addition to the input and output stage, the OpAmp comprises an intermediate stage, between the input stage and the output stage, to boost the overall gain of the OpAmp, and a class AB current control. A frequency compensation technique is used to split apart the pole frequencies in the transfer function. A disadvantage of this nested Miller compensation, is that the resulting bandwidth is reduced by a factor of two. A new method, multi-path-driven Miller compensation, which does not have this drawback, is therefore introduced. Several realizations are evaluated and a figure of merit is defined for the performance comparison of the OpAmps. One of the OpAmps operates at a 1 V supply, has a 3.4 MHz bandwidth with a 100 pF load and has a 700 &mgr;A supply current. The book is an excellent reference for professional designers of amplifiers and may be used as a text for advanced courses on the subject.
Bipolar Transistor Design And Process
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Author : Jung-Kai Hong
language : en
Publisher:
Release Date : 1982
Bipolar Transistor Design And Process written by Jung-Kai Hong and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1982 with Bipolar transistors categories.
A Heterojunction Bipolar Transistor With Stepwise Allog Graded Base
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Author : Konstantinos Konistis
language : en
Publisher:
Release Date : 2004
A Heterojunction Bipolar Transistor With Stepwise Allog Graded Base written by Konstantinos Konistis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
(Cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
Compact Hierarchical Bipolar Transistor Modeling With Hicum
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Author : Michael Schrter
language : en
Publisher: World Scientific
Release Date : 2010
Compact Hierarchical Bipolar Transistor Modeling With Hicum written by Michael Schrter and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Technology & Engineering categories.
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Designing Bipolar Transistor Radio Frequency Integrated Circuits
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Author : Allen A. Sweet
language : en
Publisher: Artech House
Release Date : 2007-12-01
Designing Bipolar Transistor Radio Frequency Integrated Circuits written by Allen A. Sweet and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-12-01 with Technology & Engineering categories.
If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Modeling The Bipolar Transistor
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Author : Ian E. Getreu
language : en
Publisher: Elsevier Science & Technology
Release Date : 1978
Modeling The Bipolar Transistor written by Ian E. Getreu and has been published by Elsevier Science & Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Technology & Engineering categories.
Design And Implementation Of Sigma Delta Modulators M For Class D Audio Amplifiers Using Differential Pairs
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Author : Nuno Pereira
language : en
Publisher: Springer
Release Date : 2014-12-01
Design And Implementation Of Sigma Delta Modulators M For Class D Audio Amplifiers Using Differential Pairs written by Nuno Pereira and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
This book focuses on the design of a 3rd Order CT-ΣΔM where the integrator stages of the filter are implemented with Bipolar-Junction Transistors (BJT) differential pairs. These circuits are fully analyzed and the design method is carefully explained. The design method is validated through experimental measurements of several prototype circuits.