Design Growth And Fabrication Of Resonant Tunneling Devices
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Design Growth And Fabrication Of Resonant Tunneling Devices
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Author : Xiao Jue Song
language : en
Publisher:
Release Date : 1991
Design Growth And Fabrication Of Resonant Tunneling Devices written by Xiao Jue Song and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Resonant Tunneling In Polar Iii Nitride Heterostructures
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Author : Jimy Joe Encomendero Risco
language : en
Publisher:
Release Date : 2020
Resonant Tunneling In Polar Iii Nitride Heterostructures written by Jimy Joe Encomendero Risco and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
The outstanding material properties of III-nitride semiconductors has prompted an intense research activity focused on the engineering of resonant tunneling transport within this revolutionary family of wide-bandgap semiconductors. From resonant tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), nitride devices hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. Although considerable research effort has been devoted over the past two decades, nitride-based resonant tunneling transport has been demonstrated only during the last four years. In this work, I present the various aspects of heterostructure design, epitaxial growth and device fabrication techniques, which have led to the first unequivocal demonstration of robust resonant tunneling transport and reliable room temperature negative differential conductance in III-Nitride heterostructures. This thesis constitutes a comprehensive work spanning all fronts of experimental, theoretical, and computational research focused on the fundamental physics and engineering of resonant tunneling transport in polar III-nitride semiconductors. Our combined experimental and theoretical approach, allowed us to shed light into the physics of electronic quantum interference phenomena in polar semiconductors which had remained hidden until now, resulting in the discovery of new tunneling features, unique in polar RTDs. The robustness of our experimental data enabled us to track these unique features to the broken inversion symmetry, which generates the built-in spontaneous and piezoelectric polarization fields. After identifying the intimate connection between the polarization fields and the resonant tunneling current, we harness this relationship to develop a completely new approach to measure the magnitude of the internal polarization fields via electron resonant tunneling transport. To get further insight into the asymmetric tunneling injection originated by the polar active region, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current which includes contributions from coherent and sequential tunneling processes is presented. After the application of this new theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities. This agreement allows us to elucidate the role played by the internal polarization fields on the amplitude of the electronic transmission and broadening of the resonant tunneling line shape. Our analytical model is then employed for the design of high-current density GaN/AlN RTDs which are harnessed as the gain elements of the first microwave oscillators and harmonic multipliers driven by III-nitride RTDs. The findings presented here pave the way for the realization of III-Nitride-based high-speed oscillators and quantum cascade lasers that operate at wavelengths that, until now, remain unreachable by other semiconductor materials.
Tunneling Devices And Their Applications In Ultra Fast And Super Dense Digital Circuits
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Author :
language : en
Publisher:
Release Date : 1997
Tunneling Devices And Their Applications In Ultra Fast And Super Dense Digital Circuits written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
The purpose of this program was to demonstrate the capabilities of NDR device for the design and fabrication of high-functionality for the design and fabrication of high-functionality digital circuits. Several basic circuit functions have been demonstrated using RTD-HBT devices and extensive software for CAD of various types of circuits including adders a correlators and multivalued logic circuits was developed and employed to estimate power/speed tradeoffs in various logic circuits. Several Resonant Tunneling devices were fabricated including RTD's, RHET's, Esaki diodes and others. These diodes were then employed to demonstrate various logic functions such as AND, XNOR, Flip Flops and others. A Monolithic RTBT circuit to demonstrate a minority gate was also fabricated and demonstrated.
Few Electron Lateral Resonant Tunneling Semiconductor Devices
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Author :
language : en
Publisher:
Release Date : 1991
Few Electron Lateral Resonant Tunneling Semiconductor Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
The effort here included design, modeling, fabrication, and characterization of lateral resonant tunneling and quantum point contact structures. Also included was a theoretical investigation of open quantum systems driven far from equilibrium, with emphasis on appropriate boundary conditions for solution of such systems. Accomplishments under this contract include the publication in Reviews of Modern Physics of the results of this foundational study, as well as the development of a graphics-oriented program for the computation and display of two-dimensional self-consistent energy band diagrams. The first lateral resonant tunneling transistors to exhibit both negative differential conductance and negative transconductance were demonstrated. The eigenstates of finite superlattices driven below the Stark localization threshold were also observed.
High Frequency Gan Electronic Devices
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Author : Patrick Fay
language : en
Publisher: Springer
Release Date : 2019-08-01
High Frequency Gan Electronic Devices written by Patrick Fay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-01 with Technology & Engineering categories.
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Nanoelectronic Circuit Design
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Author : Niraj K. Jha
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-12-21
Nanoelectronic Circuit Design written by Niraj K. Jha and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-12-21 with Technology & Engineering categories.
This book is about large-scale electronic circuits design driven by nanotechnology, where nanotechnology is broadly defined as building circuits using nanoscale devices that are either implemented with nanomaterials (e.g., nanotubes or nanowires) or following an unconventional method (e.g., FinFET or III/V compound-based devices). These nanoscale devices have significant potential to revolutionize the fabrication and integration of electronic systems and scale beyond the perceived scaling limitations of traditional CMOS. While innovations in nanotechnology originate at the individual device level, realizing the true impact of electronic systems demands that these device-level capabilities be translated into system-level benefits. This is the first book to focus on nanoscale circuits and their design issues, bridging the existing gap between nanodevice research and nanosystem design.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Silicon Based Millimeter Wave Devices
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Author : Johann-Friedrich Luy
language : en
Publisher: Springer
Release Date : 1994
Silicon Based Millimeter Wave Devices written by Johann-Friedrich Luy and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Science categories.
Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.
Nistir
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Author :
language : en
Publisher:
Release Date : 2001
Nistir written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Dielectrics For Nanosystems 3 Materials Science Processing Reliability And Manufacturing
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Author : D. Misra
language : en
Publisher: The Electrochemical Society
Release Date : 2008-05
Dielectrics For Nanosystems 3 Materials Science Processing Reliability And Manufacturing written by D. Misra and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-05 with Dielectrics categories.
This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.