Design Simulation And Analysis Of Laterally Longitudinally Non Uniform Edge Emitting Gaas Based Diode Lasers
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Design Simulation And Analysis Of Laterally Longitudinally Non Uniform Edge Emitting Gaas Based Diode Lasers
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Author : Jan-Philipp Koester
language : en
Publisher:
Release Date : 2023
Design Simulation And Analysis Of Laterally Longitudinally Non Uniform Edge Emitting Gaas Based Diode Lasers written by Jan-Philipp Koester and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023 with categories.
Design Simulation And Analysis Of Laterally Longitudinally Non Uniform Edge Emitting Gaas Based Diode Lasers Band 73
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Author : Jan-Philipp Koester
language : en
Publisher: Cuvillier Verlag
Release Date : 2023-09-19
Design Simulation And Analysis Of Laterally Longitudinally Non Uniform Edge Emitting Gaas Based Diode Lasers Band 73 written by Jan-Philipp Koester and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-09-19 with categories.
Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to 1180 nm, and the ability to achieve high output powers. The often used longitudinal-invariant Fabry-Pérot-type resonators are easy to design but often lead to functionality or performance limitations. In this work, the application of laterally-longitudinally non-uniform resonator configurations is explored as a way to reduce unwanted and performance-limiting effects. The investigations are carried out on existing and entirely newly developed laser designs using dedicated simulation tools. These include a sophisticated time-dependent laser simulator based on a traveling-wave model of the optical fields in the lateral-longitudinal plane and a Maxwell solver based on the eigenmode expansion method for the simulation of passive waveguides. Whenever possible, the simulation results are compared with experimental data. Based on this approach, three fundamentally different laser types are investigated: • Dual-wavelength lasers emitting two slightly detuned wavelengths around 784 nm out of a single aperture • Ridge-waveguide lasers with tapered waveguide and contact layouts that emit light of a wavelength of around 970 nm • Broad-area lasers with slightly tapered contact layouts emitting at 910 nm The results of this thesis underline the potential of lateral-longitudinal non-uniform laser designs to increase selected aspects of device performance, including beam quality, spectral stability, and output power.
Short Channel Gan Fet Mmic Technology For High Reliability Applications Band 74
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Author : Konstantin Osipov
language : en
Publisher: Cuvillier Verlag
Release Date : 2024-02-07
Short Channel Gan Fet Mmic Technology For High Reliability Applications Band 74 written by Konstantin Osipov and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-02-07 with categories.
Nowdays GaN HEMT technology reached maturity level that allows industral fabrication of such devices for wide range of civil (telecommunications, power electrinics, automotive etc.), as well as space and military (phased array radars) applications. At this level, technology start reaching physical limits of GaN material and require new approaches that will allow to overcome some of well known problems related to GaN HEMTs, such as high gate leakage currents, reliability issues and difficulties of normally-off transistor fabrication. The goal of these theses is theoretical and experimental confirmation of the idea, that using peizoelectric nature of GaN crystal will allow local modification of GaN HEMT channel by means of external mechanical stress (using first and second passivation layers as stressors). After implementation of the proposed technology changes and new device geometry in process flow intended for 150 nm GaN HEMTMMIC fabrication, E/D devices with pinch-off voltages +0.1V and -1.65V respectively were fabricated on the same wafer within single process flow. It was observed, that E-mode devices, fabricated using compressed passivation layers, demonstrate lower gate leakage currents and more robust in HTRB test as compared to D-mode devices. In summary, it was demonstrated, that it is possible to control pinch-off voltage and gate leakage current of short channel GaN HEMTs by application of external stress. Usage of external stress, opens new degree of freedom in device optimization, and extends opportunities for more advanced MMIC design.
Analysis Of Spatio Temporal Phenomena In High Brightness Diode Lasers Using Numerical Simulations
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Author : Anissa Zeghuzi
language : en
Publisher: Cuvillier Verlag
Release Date : 2020-10-22
Analysis Of Spatio Temporal Phenomena In High Brightness Diode Lasers Using Numerical Simulations written by Anissa Zeghuzi and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10-22 with Science categories.
Broad-area lasers are edge-emitting semiconductor lasers with a wide lateral emission aperture. This feature enables high output powers but also diminishes the lateral beam quality and results in their inherently non-stationary behavior. Research in the area is driven by application, and the main objective is to increase the brightness, which includes both output power and lateral beam quality. To understand the underlying spatio-temporal phenomena and to apply this knowledge in order to reduce costs for brightness optimization, a self-consistent simulation tool taking all essential processes into account is vital. Firstly, in this work a quasi-three-dimensional opto-electronic and thermal model is presented that describes essential qualitative characteristics of real devices well. Time-dependent traveling-wave equations are utilized to characterize the inherently non-stationary optical fields, which are coupled to dynamic rate equations for the excess carriers in the active region. This model is extended by an injection-current-density model to accurately include lateral current spreading and spatial hole burning. Furthermore, a temperature model is presented that includes short-time local heating near the active region as well as the formation of a stationary temperature profile. Secondly, the reasons of brightness degradation, i.e. the origins of power saturation and the spatially modulated field profile, are investigated. And lastly, designs that mitigate those effects limiting the lateral brightness under pulsed and continuous-wave operation are discussed. Amongst those designs a novel “chessboard laser” is presented that utilizes longitudinal-lateral gain-loss modulation and an additional phase tailoring to obtain a very low far-field divergence.
Untersuchung Der Degradation Von Inalgan Basierten Ultravioletten Leuchtdioden Zur Verbesserung Der Zuverl Ssigkeit Band 79
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Author : Johannes Glaab
language : de
Publisher: Cuvillier Verlag
Release Date : 2025-06-20
Untersuchung Der Degradation Von Inalgan Basierten Ultravioletten Leuchtdioden Zur Verbesserung Der Zuverl Ssigkeit Band 79 written by Johannes Glaab and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-06-20 with categories.
Diese Arbeit untersucht das betriebsinduzierte Degradationsverhalten von InAlGaN-basierten UV-C und UV-B LEDs. Durch Analyse des zeitlichen Verlaufs von elektroopti-schen Parametern, wie beispielsweise optische Leistung und Betriebsspannung, sowie Materialanalytischen Messungen konnten drei Degradationsmechanismen identifiziert werden, welche zu einer Reduktion der optischen Leistung der LEDs führen: Die Aktivie-rung von Magnesium-Wasserstoff-Komplexen, die Bildung von Punktdefekten in der akti-ven Zone, sowie die Diffusion von Punktdefekten in die aktive Zone. Optimierungen der Heterostruktur, des p-Dotierprofil und der Elektronenblockierschicht verbesserten die Lochinjektion und strahlende Rekombination, wodurch die initiale Leistung erhöht und die Lebensdauer der LEDs deutlich gesteigert werden konnte.
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
High Power Diode Lasers
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Author : Roland Diehl
language : en
Publisher: Springer Science & Business Media
Release Date : 2003-07-01
High Power Diode Lasers written by Roland Diehl and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-07-01 with Science categories.
Methods of design and fabrication of high-power diode lasers using proven semiconductor technologies are described in this book. The latter include epitaxy and optical lithography, mounting on heat sinks, beam forming with micro-optics and coupling to optical fibers, and reliability testing. Direct applications of high-power diode lasers in materials processing and for pumping hitherto unknown solid-state laser systems are presented in a comprehensive fashion. Thus, this book is an invaluable source of information for all scientists and engineers designing laser systems and applying the laser as a reliable and economic tool in a multitude of environments.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1994
Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Physics categories.
Handbook Of Distributed Feedback Laser Diodes Second Edition
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Author : Geert Morthier
language : en
Publisher: Artech House
Release Date : 2013-09-01
Handbook Of Distributed Feedback Laser Diodes Second Edition written by Geert Morthier and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-09-01 with Technology & Engineering categories.
Since the first edition of this book was published in 1997, the photonics landscape has evolved considerably and so has the role of distributed feedback (DFB) laser diodes. Although tunable laser diodes continue to be introduced in advanced optical communication systems, DFB laser diodes are still widely applied in many deployed systems. This also includes wavelength tunable DFB laser diodes and DFB laser diode arrays, usually integrated with intensity or phase modulators and semiconductor optical amplifiers. This valuable resource gives professionals a comprehensive description of the different effects that determine the behavior of a DFB laser diode. Special attention is given to two new chapters on wavelength tunable DFB laser diodes and bistable and unstable DFB laser diodes. Among many other updates throughout the reference, semi-conductor and electromagnetic professionals are also provided two new appendices. This book fully covers the underlying theory, commercial applications, necessary design criteria, and future direction of this technology.